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TSMBJ1009C-130P [MCC]

Silicon Surge Protector, 160V V(BO) Max, 50A, DO-214AA, PLASTIC, SMBJ, 2 PIN;
TSMBJ1009C-130P
型号： TSMBJ1009C-130P
厂家： Micro Commercial Components    Micro Commercial Components
描述：

Silicon Surge Protector, 160V V(BO) Max, 50A, DO-214AA, PLASTIC, SMBJ, 2 PIN

光电二极管
文件： 总7页 (文件大小：216K)
中文：  中文翻译
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M C C  
Micro Commercial Components  
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Noti  
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Issue  
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-20th  
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Dec-31th-2008  
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T
S
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M
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M
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BJ1024C  
one  
one  
one  
one  
one  
T
BJ1022C  
BJ1018C  
BJ1016C  
BJ1012C  
BJ1010C  
T
T
T
T
N
one  
one  
N
TSM  
BJ1009C-130  
N
one  
T
S
M
BJ1007C  
BJ1006C  
TS  
M
N
N
N
N
one  
one  
one  
one  
TS  
M
M
BJ1005C-072  
BJ1005C-064  
TS  
T
T
T
T
T
T
S
M
M
M
M
M
M
BJ0524C  
BJ0522C  
BJ0518C  
BJ0516C  
BJ0512C  
BJ0510C  
N
one  
S
S
S
S
S
N
N
one  
one  
N
one  
one  
N
TSMBJ0509C-130  
N
one  
www.mccsemi.com  
M C C  
Micro Commercial Components  
TM  
D
isc  
o
n
t
inued D  
e
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ic  
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Possible Replacements  
T
S
M
M
BJ0507C  
BJ0506C  
N
one  
one  
one  
one  
one  
one  
one  
one  
one  
one  
one  
one  
one  
one  
one  
TS  
N
N
N
N
N
N
N
N
N
N
N
N
N
N
TS  
M
M
BJ0505C-072  
BJ0505C-064  
TS  
T
T
T
T
T
T
S
M
M
M
M
M
M
BJ0324C  
BJ0322C  
BJ0318C  
BJ0316C  
BJ0312C  
BJ0310C  
S
S
S
S
S
TS  
MBJ0309C-130  
TS  
M
BJ0307C  
BJ0306C  
TS  
M
TS  
M
M
BJ0305C-072  
BJ0305C-064  
TS  
www.mccsemi.com  
M C C  
Micro Commercial Components  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
TM  
TSMBJ1009C-130  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Features  
Transient Voltage  
Protection Device  
120 Volts  
•
•
•
•
•
Oxide-Glass passivated Junction  
Bi-Directional protection in a single device  
Surge capabilities up to 100A@10/1000us or 400A@8/20us  
High Off-State impedance and Low On-State voltage  
Plastic material has UL flammability classification 94V-0  
DO-214AA  
(SMBJ)  
Mechanical Data  
•
•
•
Case : Molded plastic  
H
Polarity : None cathode band denotes  
Approx Weight : 0.093grams  
J
Maximum Ratings  
Characteristic  
Non-repetitive peak  
impulse current  
Symbol  
Value  
Unit  
10/1000us  
A
C
I
PP  
100A  
E
Non-repetitive peak  
On-state current  
Operating temperature  
range  
Junction and storage  
temperature range  
8.3ms, one-half  
cycle  
D
B
ITSM  
50A  
F
G
T
OP  
-40~150oC  
-55~150oC  
DIMENSIONS  
TJ, T  
INCHES  
MIN  
.078  
.077  
.002  
---  
.030  
.065  
.205  
.160  
.130  
MM  
MIN  
STG  
DIM  
A
B
C
D
E
MAX  
.096  
.083  
.008  
.02  
MAX  
2.44  
2.10  
.20  
NOTE  
2.00  
1.96  
.05  
---  
.51  
.060  
.091  
.220  
.180  
.155  
.76  
1.52  
2.32  
5.59  
4.57  
3.94  
F
1.65  
5.21  
4.06  
3.30  
G
H
J
Thermal Resistance  
Characteristic  
Thermal Resistance  
junction to lead  
Symbol  
Value  
Unit  
SUGGESTED SOLDER  
PAD LAYOUT  
20oC/W  
R
JL  
0.090"  
Thermal Resistance  
junction to ambient  
On recommended  
pad layout  
100oC/W  
R
JA  
Typical positive  
temperature  
coefficient for  
0.085”  
0.1%/oC  
Ϧ
Ϧ
VBR/ TJ  
breakdown voltage  
0.070”  
www.mccsemi.com  
Revision: 4  
2005/01/10  
M C C  
Micro Commercial Components  
Off-State  
TSMBJ1009C-130  
TM  
к
ELECTRICAL CHARACTERISTIC @25 Unless otherwise specified  
Rated  
Repetitive Off  
Off-state  
Leakage  
On-State  
Breakover  
Voltage  
Parameter  
Voltage Breakover Current Holding Current  
@I =1.0A  
T
-state Voltage Current@VDRM  
Symbol  
Units  
Limit  
VDRM  
Volts  
Max  
IDRM  
uA  
Max  
VBO  
Volts  
Max  
VT  
Volts  
Max  
IBO+  
mA  
Max  
IH-  
mA  
Min  
CJ  
pF  
Typ.  
TSMBJ1009C-130  
120  
5
160  
5
800  
150  
120  
MAXIMUM RATED SURGE WAVEFORM  
Waveform  
2/10 us  
Standard  
GR-1089-CORE  
IEC 61000-4-5  
FCC Part 68  
Ipp (A)  
500  
100  
50  
0
Peakvalue(Ipp)  
tr = rise time to peak value  
tp = decay time to half value  
8/20 us  
400  
10/160 us  
10/700 us  
10/560 us  
10/1000 us  
200  
Half value  
ITU-T K20/21  
FCC Part 68  
200  
150  
tr  
tp  
TIME  
GR-1089-CORE  
100  
Symbol  
VDRM  
IDRM  
VBR  
IBR  
Parameter  
I
Stand-off voltage  
IPP  
Leakage current at stand-off voltage  
Breakdown voltage  
IBO  
IH  
Breakdown current  
IBR  
IDRM  
V
Breakover voltage  
VBO  
IBO  
VBR  
VDRM  
VT  
Breakover current  
VBO  
NOTE: 1  
NOTE: 2  
Holding current  
IH  
On state voltage  
Peak pulse current  
Off-state capacitance  
VT  
IPP  
CO  
Κ
NOTE  
1. I > ( V / R ) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state.  
H
L
L
The surge recovery time. It does not exceed 30ms.  
2. Off-state capacitance measured at f=1.0MHz , 1.0Vrms signal , VR=2Vdc bias.  
www.mccsemi.com  
Revision: 4  
2005/01/10  
M C C  
Micro Commercial Components  
TM  
TSMBJ1009C-130  
Fig.1 - Off-State Current v.s Junction Temperature  
100  
Fig.2 - Relative Variation of  
Breakdown Voltage v.s Junction Temperature  
1.2  
1.15  
1.1  
V
(T )  
J
BR  
10  
к
V
(T =25  
J
)
BR  
1
VDRM = 50V  
1.05  
1
0.1  
0.01  
0.95  
0.9  
0.001  
-25  
0
25  
50  
75  
100  
125  
150  
-50  
-25  
0
25  
50  
75  
100 125 150 175  
к
Tj , JUNCTION TEMPERATURE (  
)
к
Tj ; JUNCTION TEMPERATURE (  
)
Fig.3 - Relative Variation of  
Breakover Voltage v.s Junction Temperature  
Fig.4 - On-State Current v.s On-State Voltage  
100  
10  
1
1.1  
1.05  
1
V
(T )  
J
BO  
к
(T =25 )  
V
BO  
J
к
T
= 25  
J
0.95  
-50  
-25  
0
25  
50  
75  
100 125 150 175  
1
2
3
4
5
6
7
8
9
к
Tj ; JUNCTION TEMPERATURE (  
)
V(T) ; ON-STATE VOLTAGE  
Fig.5 - Relative Variation of  
Fig.6 - Relative Variation of  
Holding Current v.s Junction Temperature  
Junction Capacitance v.s Reverse Voltage Bias  
2
1.5  
1
1
C (VR)  
O
к
Tj =25  
f=1MHz  
= 1V  
I
(T )  
J
H
C
O
(VR = 1V)  
0.5  
к
(T =25 )  
I
V
H
J
RMS  
0
0.1  
-50  
-25  
0
25  
50  
75  
100  
125  
1
10  
VR ; REVERSE VOLTAGE (V)  
100  
к
Tj ; JUNCTION TEMPERATURE (  
)
www.mccsemi.com  
Revision: 4  
2005/01/10  
M C C  
Micro Commercial Components  
TM  
TSMBJ1009C-130  
TYPICAL APPLICATION CIRCUITS  
FUSE  
RING  
TELECOM  
EQUIPMENT  
TVPD 1  
E.G. MODEM  
TIP  
PTC  
RING  
TVPD 1  
TVPD 2  
TELECOM  
EQUIPMENT  
E.G. ISDN  
PTC  
TIP  
PTC  
RING  
TVPD 2  
TELECOM  
EQUIPMENT  
TVPD 1  
E.G. LINE CARD  
TVPD 3  
PTC  
TIP  
The PTC (Positive Temperature Coefficient) is an overcurrent protection device.  
www.mccsemi.com  
Revision: 4  
2005/01/10  
M C C  
Micro Commercial Components  
TM  
MARKING CODE  
MCC  
1009C  
130  
www.mccsemi .com  

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