28F410-100M1 [MCNIX]

4M-BIT (512K X 8) CMOS FLASH MEMORY; 4M位( 512K ×8 )的CMOS FLASH MEMORY
28F410-100M1
元器件型号: 28F410-100M1
生产厂家: MACRONIX INTERNATIONAL    MACRONIX INTERNATIONAL
描述和应用:

4M-BIT (512K X 8) CMOS FLASH MEMORY
4M位( 512K ×8 )的CMOS FLASH MEMORY

PDF文件: 总2页 (文件大小:175K)
下载文档:  下载PDF数据表文档文件
型号参数:28F410-100M1参数

28F512

512K(64Kx8)CMOS FLASH MEMORY

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252 INTEL

28F5H

Silicon High Voltage Assembly

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12 EDAL

28F5H1

Silicon High Voltage Assembly

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5 EDAL

28F6408W30

1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)

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250 INTEL

28F640C3

3 Volt Intel Advanced+ Boot Block Flash Memory

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86 INTEL

28F640C3

Advanced+ Boot Block Flash Memory (C3)

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49 INTEL

28F640J3C-120

Intel StrataFlash Memory (J3)

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395 INTEL

28F640J5

28F640J5 - INTEL StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT

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150 ETC

28F640J5

5 Volt Intel StrataFlash® Memory

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54 INTEL

28F640L18

StrataFlash Wireless Memory

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37 INTEL

28F640L30

1.8 Volt Intel StrataFlash㈢ Wireless Memory with 3.0-Volt I/O (L30)

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38 INTEL

28F640P3

Intel StrataFlash Embedded Memory

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71 INTEL

28F640W30

Numonyx Wireless Flash Memory (W30)

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25 NUMONYX

28F640W30

1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)

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46 INTEL

28F6H

Silicon High Voltage Assembly

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15 EDAL