10A05_V01 [MDD]
GENERAL PURPOSE SILICON RECTIFIER;
| 型号： | 10A05_V01 |
| 厂家： | 
Chendahang Electronics Co., Ltd |
| 描述： | GENERAL PURPOSE SILICON RECTIFIER |
| 文件： | 总2页 (文件大小：539K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10A05 THRU 10A10
Reverse Voltage - 50 to 1000 Volts Forward Current - 10.0 Ampere
GENERAL PURPOSE SILICON RECTIFIER
Features
R-6
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
1.0 (25.4)
MIN.
Construction utilizes void-free molded plastic technique
Low reverse leakage
0.360 (9.1)
0.340(8.6)
High forward surge current capability
DIA.
High temperature soldering guaranteed:
250°C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension
0.360(9.1)
0.340(8.6)
Mechanical Data
1.0 (25.4)
MIN.
Case : JEDEC R-6 Molded plastic body
0.052 (1.3)
0.048 (1.2)
Terminals : Solder plated, solderable per MIL-STD-750,Method 2026
Polarity : Polarity symbol marking on body
Mounting Position: Any
DIA.
Weight
: 0.072 ounce, 2.05 grams
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Parameter
10A05 10A1 10A2 10A4 10A6 10A8 10A10
UNITS
SYMBOLS
MDD MDD MDD MDD MDD MDD MDD
Marking Code
10A05 10A1 10A2 10A4 10A6 10A8 10A10
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800 1000
560 700
800 1000
V
V
V
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
100
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at TA=60°C
Peak forward surge current
10.0
I(AV)
A
600
IFSM
A
V
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
1.0
VF
IR
Maximum instantaneous forward voltage at 10.0A
μ
10.0
100
A
Maximum DC reverse current
at rated DC blocking voltage
TA=25°C
TA=100°C
pF
°C/W
°C
150
Typical junction capacitance (NOTE 1)
CJ
10.0
Typical thermal resistance (NOTE 2)
Operating junction and storage temperature range
RθJA
-50 to +150
TJ,TSTG
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
DN:T19816A0
https://www.microdiode.com
Rev:2019A0
Page :1
10A05 THRU 10A10
Reverse Voltage - 50 to 1000 Volts Forward Current - 10.0 Ampere
Ratings And Characteristic Curves
FIG. 1 -- TYPICAL FORWARD CHARACTERISTIC
FIG. 2 -- TYPICAL JUNCTION CAPACITANCE
10
1000
4.0
Tj = 25
Tj = 25
Pulse Width = 300 S
1.0
100
0.4
0.1
0.04
0
10.0
1.0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1.0
10
100
INSTANTANEOUS FORWARD VOLTAGE / VOLTS
REVERSE VOLTAGE / VOLTS
FIG. 3 -- FORWARD CURRENT DERATING CURVE
FIG. 4 -- PEAK FORWARD SURGE CURRENT
800
600
12
10
8
Single Phase Half Wave 60HZ
Resistive or Inductive Load
Tj = 125
8.3 ms Single
Half Sing -Wave
6
400
4
2
0
200
25
50
75
100
125
150
175
200
225
0
1.0
2.0
10
20
100
AMBIENT TEMPERATURE /
NUMBER OF CYCLES AT 60HZ
The curve above is for reference only.
https://www.microdiode.com
Rev:2019A0
Page :2
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