1H1_V01 [MDD]
HIGH EFFICIENCY RECTIFIERS;
| 型号： | 1H1_V01 |
| 厂家： | 
Chendahang Electronics Co., Ltd |
| 描述： | HIGH EFFICIENCY RECTIFIERS 功效 |
| 文件： | 总2页 (文件大小：505K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1H1 THRU 1H7
Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere
HIGH EFFICIENCY RECTIFIERS
R-1
Features
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
High speed switching for high efficiency
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250°C/10 seconds,0.375”(9.5mm) lead length, 5 lbs.
(2.3kg) tension
1.0 (25.4)
MIN.
0.102 (2.6)
0.091 (2.3)
DIA.
0.140(3.50)
0.114(2.90)
Mechanical Data
1.0 (25.4)
MIN.
Case : JEDEC R-1 Molded plastic body
0.025 (0.65)
0.021 (0.55)
DIA.
Terminals : Solder plated, solderable per MIL-STD-750,Method 2026
Polarity : Polarity symbol marking on body
Mounting Position: Any
Weight
Dimensions in inches and (millimeters)
: 0.007 ounce, 0.20 grams
Maximum Ratings And Electrical Characteristics
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
1H1 1H2 1H3 1H4 1H5 1H6 1H7 1H8
parameter
SYMBOLS
UNITS
MDD MDD MDD MDD MDD MDD MDD MDD
1H1 1H2 1H3 1H4 1H5 1H6 1H7 1H8
Marking code
50 100 200 300 400 600 800 1000
V
V
V
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
35
70 140 210 280 420 560 700
50 100 200 300 400 600 800 1000
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at TA=25°C
Peak forward surge current
1.0
I(AV)
A
25.0
IFSM
VF
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
A
V
1.0
1.3
1.7
Maximum instantaneous forward voltage at 1.0A
5.0
100.0
μ
A
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time
TA=25°C
TA=100°C
(NOTE 1)
IR
trr
50
70
ns
Typical junction capacitance (NOTE 2)
15.0
12.0
pF
°C/W
°C
CJ
RθJA
50.0
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
-65 to +150
TJ,TSTG
Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
DN:T19817A0
https://www.microdiode.com
Rev:2019A0
Page :1
1H1 THRU 1H7
Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere
Ratings And Characteristic Curves
FIG. 1- FORWARD CURRENT DERATING CURVE
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
30
1.0
0.8
0.6
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
25
20
15
10
5.0
Single Phase
0.4
Half Wave 60Hz
Resistive or
inductive Load
0.2
0
0
25
50
75
100
125
150
175
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
1,000
100
10
20
10
TJ=25 C
PULSE WIDTH=300 µs
1%DUTY CYCLE
TJ=100 C
1
0.1
1
1H1-1H3
1H4-1H5
1H6-1H8
TJ=25 C
0.1
0.01
0.01
0.2
0.6
1.0
1.4
1.8 2.0
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 5-TYPICAL JUNCTION CAPACITANCE
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
200
100
100
10
1
TJ=25 C
10
1H1-1H5
1H6-1H8
0.1
0.01
0.1
1
10
100
1
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
The curve above is for reference only.
https://www.microdiode.com
Rev:2019A0
Page :2
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