1N5401G [MDD]
GLASS PASSIVATED SILICON RECTIFIER;
| 型号： | 1N5401G |
| 厂家： | 
Chendahang Electronics Co., Ltd |
| 描述： | GLASS PASSIVATED SILICON RECTIFIER |
| 文件： | 总2页 (文件大小：558K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N5400G THRU 1N5408G
Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Ampere
GLASS PASSIVATED SILICON RECTIFIER
DO-201AD
Features
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
1.0 (25.4)
MIN.
Construction utilizes void-free molded plastic technique
Low reverse leakage
0.220 (5.6)
0.197(5.0)
DIA.
High forward surge current capability
High temperature soldering guaranteed:
250°C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension
0.375(9.5)
0.285(7.2)
Mechanical Data
1.0 (25.4)
MIN.
Case : JEDEC DO-201AD Molded plastic body
Terminals : Solder plated, solderable per MIL-STD-750,Method 2026
Polarity : Polarity symbol marking on body
Mounting Position: Any
0.052 (1.3)
0.048 (1.2)
DIA.
Weight
: 0.04 ounce, 1.10 grams
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
1N
1N
1N
1N
1N
1N
1N
1N
1N
Parameter
5400G 5401G 5402G 5403G 5404G 5405G 5406G 5407G 5408G
MDD MDD MDD MDD MDD MDD MDD MDD MDD
1N
SYMBOLS
UNITS
1N
1N
1N
1N
1N
1N
1N
1N
Marking Code
5400G 5401G 5402G 5403G 5404G 5405G 5406G 5407G 5408G
50 100 200 300 400 500 600 800 1000
35 70 140 210 280 350 420 560 700
50 100 200 300 400 500 600 800 1000
VRRM
VRMS
VDC
V
V
V
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at TA=75°C
Peak forward surge current
I(AV)
3.0
A
IFSM
150.0
1.2
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
A
V
VF
IR
Maximum instantaneous forward voltage at 3.0A
μ
5.0
100.0
A
Maximum DC reverse current
at rated DC blocking voltage
TA=25°C
TA=100°C
CJ
30.0
20.0
pF
°C/W
°C
Typical junction capacitance (NOTE 1)
RθJA
TJ,TSTG
Typical thermal resistance (NOTE 2)
Operating junction and storage temperature range
-65 to +150
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
DN:T19821A0
https://www.microdiode.com
Rev:2019A0
Page :1
1N5400G THRU 1N5408G
Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Ampere
Ratings And Characteristic Curves
FIG. 1- FORWARD CURRENT DERATING CURVE
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
150
120
90
3.0
2.4
1.8
Single Phase
1.2
Half Wave 60Hz
Resistive or
60
inductive Load
0.6
0
30
0
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
25
50
75
100
125
150
175
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
1,000
100
10
20
10
TJ=150 C
TJ=100 C
1
0.1
TJ=25 C
PULSE WIDTH=300 µs
1%DUTY CYCLE
1
0.1
0.01
0.01
TJ=25 C
0.6
0.8
1.0
1.2
1.4
1.5
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 5-TYPICAL JUNCTION CAPACITANCE
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
200
100
100
10
1
TJ=25 C
10
0.1
0.01
0.1
1
10
100
1
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
The curve above is for reference only.
https://www.microdiode.com
Rev:2019A0
Page :2
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