B5818W [MDD]
SCHOTTKY DIODE Molded plastic body; 肖特基二极管模压塑体
| 型号： | B5818W |
| 厂家： | 
Chendahang Electronics Co., Ltd |
| 描述： | SCHOTTKY DIODE Molded plastic body |
| 文件： | 总2页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
B5817W THRU B5819W
SCHOTTKY DIODE
SOD-123
1.65(.065)
1.55(.061)
1.80(.071)
1.40(.055)
FEATURES
For use in low voltage, high frequency inverters
Free wheeling, and polanty protection applications
3.86(0.152)
3.56(0.145)
3.9(0.154)
3.7(0.146)
2.84(0.112)
2.54(0.100)
2.7(0.106)
2.6(0.102)
MECHANICAL DATA
0.6(.023)
0.5(.020)
.71(0.028)
.50(0.020)
.15(.006)
MAX
1.35(.053)
.94(.037)
.135(.005)
.127(.004)
1.15(.045)
1.05(.041)
Case: Molded plastic body
Terminals: Plated leads solderable per MIL-STD-750,
Method 2026
Polarity: Polarity symbols marked on case
Marking: B5817W:SJ, B5818W:SK, B5819W:SL
.25(.010)
MIN
Dimensions in millimeters and (inches)
A=25C
Maximum ratings and electrical characteristics, Single diode @T
SYMBOLS
UNITS
PARAMETER
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC Blocking voltage
B5817W
B5818W
B5819W
VRRM
VRWM
VR
V
20
14
30
40
28
RMS Reverse voltage
VR(RMS)
IO
V
A
21
Average rectified output current
Peak forward surge current @=8.3ms
Repetitive peak forward current
Power dissipation
Thermal resistance junction to ambient
Storage temperature
1
9
1.5
A
IFSM
IFRM
A
250
mW
K/W
C
Pd
RΘJA
500
TSTG
-65 to +150
30
Non-Repetitive peak reverse voltage
Electrical ratings @TA=25C
VRM
20
40
V
SYMBOLS
Min.
20
Max.
Unit
V
Test conditions
PARAMETER
Reverse breakdown voltage
B5817W
IR=1mA
V
B5818W
B5819W
V(BR)
30
V
40
VR=20V
VR=30V
VR=40V
B5817W
B5818W
B5819W
Reverse voltage leakage current
Forward voltage
1
IR
mA
0.45
0.75
0.55
0.875
0.6
B5817W
B5818W
B5819W
V
V
IF=1A
IF=3A
VF
V
0.9
120
CD
VR=4V,f=1.0MHz
pF
Diode capacitance
MDD ELECTRONIC
RATINGS AND CHARACTERISTIC CURVES B5817W THRU B5819W
FIG. 1- FORWARD CURRENT DERATING CURVE
FIG. 2-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
10.8
9.0
7.2
5.4
3.6
1.25
1.0
0.75
0.5
0.25
0
Resistive or inductive
load0.375''(9.5mm)
lead length
1.8
0
0
20
40
60
80
100
120
140
0
10
100
NUMBER OF CYCLES AT 60Hz
CASE TEMPERATURE( C)
FIG. 3- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG. 4- TYPICAL REVERSE CHARACTERISTICS
100
10
50
10
TJ=125
TJ=75
C
TA=25
C
TA=125
C
1.0
1.0
0.1
C
0.1
Pulse width=300us
1% duty cycle
0.01
0.001
TJ=25
C
0.01
0
0.4
0.8
1.2
1.6
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE(V)
PERCENT OF RATED PEAK PEVERSE VOLTAGE (%)
FIG. 5- TYPICAL JUNCTION CAPACITANCE
FIG. 6-TYPICAL TRANSIENT
THERMAL IMPEDANCE
400
100
10
100
1
10
0.1
0.1
1
10
100
0.01
1
10
100
REVERSE VOLTAGE (V)
t--PULSE DURATION (sec.)
MDD ELECTRONIC
相关型号：
B5818W-TP
Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2
MCC
B5818WS-TP
Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2
MCC
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