E3DB [MDD]
SURFACE MOUNT SUPERFAST RECOVERY RECTIFIER;
| 型号： | E3DB |
| 厂家： | 
Chendahang Electronics Co., Ltd |
| 描述： | SURFACE MOUNT SUPERFAST RECOVERY RECTIFIER 快速恢复二极管 |
| 文件： | 总2页 (文件大小：616K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ES3ABF THRU ES3JBF
SURFACE MOUNT SUPERFAST RECOVERY RECTIFIER
Reverse Voltage - 50 to 600 Volts Forward Current -
3.0 Amperes
SMBF
FEATURES
Cathode Band
Top View
For surface mounted applications
Low profile package
0.146(3.70)
0.138(3.50)
0.086(2.20)
0.075(1.90)
Glass Passivated Chip Junction
Superfast reverse recovery time
Lead free in comply with EU RoHS 2011/65/EU diretives
0.173(4.4)
0.165(4.2)
0.010(0.26)
0.0071(0.18)
0.051(1.30)
0.043(1.10)
0.051(1.30)
0.039(1.0)
MECHANICAL DATA
Case: JEDEC SMBF molded plastic body
Terminals: leads solderable per MIL-STD-750,
Method 2026
Mounting Position: Any
Weight:57mg/0.002oz
0.216(5.5)
0.200(5.1)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
ES3ABF
E3AB
ES3BBF
E3BB
ES3DBF
E3DB
ES3GBF
E3GB
ES3JBF
E3JB
UNITS
MDD Catalog
Number
Marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
50
35
50
100
70
200
140
200
400
280
400
600
420
600
VOLTS
VOLTS
VOLTS
VRMS
VDC
100
Maximum DC blocking voltage
Maximum average forward rectified current
at TL=100 C
I(AV)
Amps
3.0
Peak forward surge current
IFSM
VF
100
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Amps
Volts
1.7
1.0
1.25
Maximum instantaneous forward voltage at 3.0A
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time
TA=25 C
TA=125 C
(NOTE 1)
5.0
100.0
µ
A
IR
trr
ns
35
Typical junction capacitance (NOTE 2)
CJ
RθJA
pF
C/W
C
45.0
55.0
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
TJ,TSTG
-55 to +150
Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.5x0.5”(12.7x12.7mm) copper pad areas
RATINGS AND CHARACTERISTIC CURVES ES3ABF THRU ES3JBF
Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram
50 ohm
Noninductive
10 ohm
Noninductive
trr
+0.5
D.U.T
+
PULSE
GENERATOR
Note 2
25Vdc
approx
0
-
-0.25
1 ohm
NonInductive
OSCILLOSCOPE
Note 1
-1.0
Note：1.Rise Time = 7ns, max.
Input Impedance = 1megohm,22pF.
10ns/div
2. Ries Time =10ns, max.
Source Impedance = 50 ohms.
Set time Base for 10ns/div
Fig.3 Typical Reverse Characteristics
Fig.2 Maximum Average Forward Current Rating
3.5
300
100
3.0
2.4
1.8
TJ=125°C
10
TJ=75°C
TJ=25°C
1.2
1.0
0.1
Single phase half wave resistive
or inductive P.C.B mounted on
0.6
0.5×0.5"(12.7×12.7mm) pad areas.
0.0
25
50
75
100
125
150
175
0
20
40
60
80
100
Lead Temperature (°C)
% of PIV.VOLTS
Fig.4 Typical Forward Characteristics
Fig.5 Typical Junction Capacitance
70
60
50
40
30
20
10
10
1.0
TJ=25°C
ES3ABF~ES3DBF
ES3EBF/ ES3GBF
ES3JBF
0.1
TJ=25°C
f = 1.0MHz
Vsig = 50mVp-p
0.01
0.001
0.5
1.0
1.5
2.0
2.5
0.1
1
10
100
0
Instaneous Forward Voltage (V)
Reverse Voltage (V)
Fig.6 Maximum Non-Repetitive Peak
Forward Surage Current
120
100
80
60
40
20
00
8.3 ms Single Half Sine Wave
(JEDEC Method)
1
10
100
Number of Cycles
The cruve graph is for reference only, can't be the basis for judgment(曲线图仅供参考)!
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