ES2A_1 [MDD]
SURFACE MOUNT SUPER FAST RECTIFIER Low reverse leakage; 表面装载超快速整流器低反向漏
| 型号： | ES2A_1 |
| 厂家： | 
Chendahang Electronics Co., Ltd |
| 描述： | SURFACE MOUNT SUPER FAST RECTIFIER Low reverse leakage |
| 文件： | 总2页 (文件大小：503K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ES2A THRU ES2J
SURFACE MOUNT SUPER FAST RECTIFIER
Reverse Voltage - 50 to 1000 Volts Forward Current -
2.0 Amperes
FEATURES
SMA/DO-214AC
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Ultra fast switching for high efficiency
Low reverse leakage
0.110(2.80)
0.100(2.54)
0.067 (1.70)
0.051 (1.30)
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
0.177(4.50)
0.157(3.99)
0.096(2.42)
0.078(1.98)
MECHANICAL DATA
Case: JEDEC DO-214AC molded plastic body
Terminals: leads solderable per MIL-STD-750,
Method 2026
0.060(1.52)
0.030(0.76)
0.008(0.203)MAX.
0.208(5.28)
0.188(4.80)
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight:0.002 ounce, 0.07 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
UNITS
ES2A ES2B ES2C ES2D ES2E ES2G ES2J
MDD Catalog
Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VOLTS
VOLTS
VOLTS
50
35
50
100
70
150 200 300
105 140 210
150 200 300
400
280
400
600
420
600
VRRM
VRMS
VDC
Maximum DC blocking voltage
Maximum average forward rectified current
at TL=55 C
100
I(AV)
2.0
Amps
Peak forward surge current
IFSM
VF
50.0
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Amps
Volts
1.7
0.95
1.25
Maximum instantaneous forward voltage at 2.0A
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time
TA=25 C
TA=100 C
(NOTE 1)
5.0
50.0
µ
A
IR
trr
ns
35
Typical junction capacitance (NOTE 2)
CJ
RθJA
pF
C/W
C
60.0
40.0
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
TJ,TSTG
-65 to +150
Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
MDD ELECTRONIC
RATINGS AND CHARACTERISTIC CURVES ES2A THRU ES2J
FIG. 1- FORWARD CURRENT DERATING CURVE
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
50
40
30
20
2
1.6
1.2
0.8
0.4
0
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
10
0
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
25
50
75
100
125
150
175
1
10
100
AMBIENT TEMPERATURE,
C
NUMBER OF CYCLES AT 60 Hz
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
1,000
100
10
20
10
TJ=25 C
PULSE WIDTH=300 µs
1%DUTY CYCLE
1
0.1
TJ=100 C
TJ=25 C
ES2A-ES2D
ES2E-ES2G
ES2J
1
0.1
0.01
0.01
0
0.4
0.8
1.2
1.6
1.8
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENTAGE OF PEAK REVERSE VOLTAGE,%
FIG. 5-TYPICAL JUNCTION CAPACITANCE
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
200
100
100
10
1
10
TJ=25 C
0.1
0.01
0.1
1
10
100
1
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
MDD ELECTRONIC
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