ES2DBG [MDD]
SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER;
| 型号： | ES2DBG |
| 厂家： | 
Chendahang Electronics Co., Ltd |
| 描述： | SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER 超快速恢复二极管 |
| 文件： | 总3页 (文件大小：948K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ES2ABG THRU ES2JBG
Reverse Voltage - 50 to 600 Volts Forward Current - 2.0 Ampere
SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER
Features
DO-214AA/SMB
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Low reverse leakage
0.155(3.94)
0.130(3.30)
0.086 (2.20)
0.071 (1.80)
Built-in strain relief,ideal for automated
placement High forward surge current capability
High temperature soldering guaranteed:
250°C/10 seconds at terminals
0.185(4.70)
0.160(4.06)
0.012(0.305)
0.006(0.152)
0.096(2.44)
0.084(2.13)
Glass passivated chip junction
0.060(1.52)
0.030(0.76)
0.008(0.203)MAX.
Mechanical Data
0.220(5.59)
0.200(5.08)
Case : JEDEC DO-214AA/SMB Molded plastic body
Terminals : Solder plated, solderable per MIL-STD-750,Method 2026
Polarity : Polarity symbol marking on body
Mounting Position: Any
Dimensions in inches and (millimeters)
Weight
: 0.003 ounce, 0.095 grams
Maximum Ratings And Electrical Characteristics
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Parameter
ES2ABG ES2BBG ES2CBG ES2DBG ES2EBG ES2GBG ES2JBG
SYMBOLS
UNITS
MDD
MDD
MDD
MDD
MDD
MDD
MDD
Marking Code
ES2AB ES2BB ES2CB ES2DB ES2EB ES2GB ES2JB
Maximum repetitive peak reverse voltage
Maximum RMS voltage
V
RMM
RMS
50
35
50
100
70
150
105
150
200
140
200
300
210
300
400
280
400
600
420
600
V
V
V
V
Maximum DC blocking voltage
V
DC
100
I
(AV)
Maximum average forward rectified current
2.0
60
A
A
at TL=55
℃
Peak forward surge current
8.3ms single half sine-wave
superimposed onrated load (JEDEC Method)
I
FSM
Maximum instantaneous forward voltage at 2.0A
V
F
1
1.25
1.68
V
I
R
5.0
100.0
Maximum DC reverse current
at rated DCblocking voltage
T
A
=25
TA=125℃
(NOTE 1)
℃
μA
t
rr
Maximum reverserecovery time
35
ns
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
C
J
40.0
60.0
pF
R
JA
℃/
W
℃
Operating junction and storage temperature range
T
J,
T
STG
-55 to +150
Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A
2.P.C.B. mounted with1.0x1.0”(2.54x2.54cm)copperpad areas.
3.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
4.The typical data above is for referenceonly.
DN:T19712A0
https://www.microdiode.com
Rev:2019A0
Page :1
ES2ABG THRU ES2JBG
Reverse Voltage - 50 to 600 Volts Forward Current - 2.0 Ampere
Ratings And Characteristic Curves
50 ohm
Noninductive
10 ohm
Noninductive
trr
+0.5
D.U.T
+
-
PULSE
GENERATOR
Note 2
25Vdc
approx
0
-0.25
1 ohm
NonInductive
OSCILLOSCOPE
Note 1
-1.0
Note：1.Rise Time = 7ns, max.
Input Impedance = 1megohm,22pF.
10ns/div
2. Ries Time =10ns, max.
Source Impedance = 50 ohms.
Set time Base for 10ns/div
Fig.3 Typical Reverse Characteristics
Fig.2 Maximum Average Forward Current Rating
300
3.5
100
3.0
2.5
2.0
1.5
1.0
TJ=125°C
10
TJ=75°C
1.0
TJ=25°C
0.5
Single phase half-wave 60 Hz
resistive or inductive load
0.0
0.1
0
20
40
60
80
100
25
50
75
100
125
150
175
Case Temperature (°C)
% of PIV.VOLTS
Fig.5 Typical Junction Capacitance
Fig.4 Typical Forward Characteristics
10
1.0
TJ=25°C
TJ=25°C
100
10
ES2AB~ES2DB
ES2EB/ES2GB
ES2JB
0.1
0.01
0.001
TJ=25°C
f = 1.0MHz
Vsig = 50mVp-p
1
0.1
0.5
1.0
1.5
2.0
2.5
1.0
10
100
0
Instaneous Forward Voltage (V)
Reverse Voltage (V)
Fig.6 Maximum Non-Repetitive Peak
Forward Surge Current
80
70
60
50
40
30
20
10
00
8.3 ms Single Half Sine Wave
(JEDEC Method)
1
10
100
Number of Cycles
The curve above is for reference only.
https://www.microdiode.com
Rev:2019A0
Page :2
ES2ABG THRU ES2JBG
Reverse Voltage - 50 to 600 Volts Forward Current - 2.0 Ampere
Packing information
P0
P1
unit:mm
d
E
F
Symbol
Item
Tolerance
SMB
W
B
Carrier width
Carrier length
Carrier depth
Sprocket hole
A
B
C
d
D
D1
D2
E
F
P
P0
0.1
0.1
0.1
0.05
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
3.81
5.41
2.42
1 5.0
330.00
50.00
13.00
1.75
5.55
8.00
4.00
2.00
A
P
13" Reel outside diameter
13" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
D2
D1
T
C
W1
P1
D
T
W
W1
0.30
12.00
12.30
Reel width
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
Reel packing
APPROX.
GROSS WEIGHT
COMPONENT
SPACING
INNER
BOX
(mm)
REEL
DIA,
(mm)
CARTON
SIZE
(mm)
BOX
(pcs)
CARTON
(pcs)
REEL
(pcs)
PACKAGE
SMB
REEL SIZE
(kg)
(mm)
4.0
13"
3,000
190*190*41
330
365*365*360
10,000
80,000
14.0
Suggested Pad Layout
Symbol
Unit (mm)
2.8
Unit (inch)
0.110
A
B
C
D
E
2.4
0.094
4.6
0.181
2.2
0.086
7.0
0.276
Important Notice and Disclaimer
Microdiode Electronics (Jiangsu) reserves the right to make changes to this document and its products and
specifications at any time without notice. Customers should obtain and confirm the latest product information and
specifications before final design,purchase or use.
Microdiode Electronics (Jiangsu) makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, not does Microdiode Electronics (Jiangsu) assume any liability for application
assistance or customer product design. Microdiode Electronics (Jiangsu) does not warrant or accept any liability with
products which are purchased or used for any unintended or unauthorized application.
No license is granted by implication or otherwise under any intellectual property rights of Microdiode
Electronics (Jiangsu).
Microdiode Electronics (Jiangsu) products are not authorized for use as critical components in life support
devices or systems without express written approval of Microdiode Electronics (Jiangsu).
https://www.microdiode.com
Rev:2019A0
Page :3
相关型号：
ES2DE3
Rectifier Diode, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, DO-214AA, LEAD FREE, PLASTIC, SMB, 2 PIN
VISHAY
ES2DHE3
DIODE 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AA, LEAD FREE, PLASTIC, SMB, 2 PIN, Rectifier Diode
VISHAY
ES2DHE3_A/H
Rectifier Diode, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, DO-214AA, SMB, 2 PIN
VISHAY
ES2DHM3/5BT
Rectifier Diode, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, DO-214AA, SMB, 2 PIN
VISHAY
©2020 ICPDF网 联系我们和版权申明