ES2EW [MDD]
SURFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER;型号: | ES2EW |
厂家: | Chendahang Electronics Co., Ltd |
描述: | SURFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER |
文件: | 总3页 (文件大小:748K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ES2AW THRU ES2JW
Reverse Voltage - 50 to 600 Volts Forward Current - 2.0 Ampere
SURFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER
SOD-123FL
Features
Glass passivated device
0.075(1.90)
0.067(1.70)
0.031 (0.08)
0.043 (1.10)
Ideal for surface mouted applications
Low reverse leakage
Metallurgically bonded construction
High temperature soldering guaranteed:
250°C/10 seconds,0.375”(9.5mm) lead length,
5 lbs. (2.3kg) tension
0.114(2.90)
0.102(2.60)
0.043(1.10)
0.035(0.90)
0.008(0.20)
0.005(0.12)
0.035(0.90)
0.028(0.70)
0.154(3.90)
0.141(3.60)
Mechanical Data
Cas e : JEDEC SOD-123FL molded plastic body
Terminals : Solderable per MIL-STD-750,Method 2026
Polarity : Polarity symbol marking on body
Mounting Pos ition : Any
Dimensions in inches and (millimeters)
Weight
: 0.0007 ounce, 0.02 grams
Maximum Ratings And Electrical Characteristics
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Parameter
ES2AW ES2BW ES2CW ES2DW ES2EW ES2GW ES2JW
SYMBOLS
UNITS
MDD
2E1
MDD
2E2
MDD
2E3
MDD
2E4
MDD
2E5
MDD
2E6
MDD
2E8
Marking Code
V
V
V
50
35
50
100
70
150
105
150
200
140
200
300
210
300
400
280
400
600
420
600
V
RMM
RMS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
V
100
Maximum DC blocking voltage
V
DC
Maximum average forward rectified current at
Ta=65°C
I
(AV)
2.0
50
A
A
Peak forward surge current 8.3ms single half
sine-wave
superimposed onrated load (JEDEC Method)
I
FSM
V
F
V
0.95
1.25
1.7
Maximum instantaneous forward voltage at 2.0A
5
100
Maximum DC reverse current TA=25
℃
I
R
μA
at rated DCblocking voltage TA=125℃
Typical junction capacitance (NOTE 1)
Maximum Reverse Recovery Time (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction temperature range
pF
ns
25
35
C
J
trr
90
R
JA
℃/W
-55 to +125
℃
℃
T
J
-55 to +150
Storage temperature range
T
STG
Note:1.Measured at 1.0MHz and applied reverse voltage of 4.0V D.C.
2.P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copperpad areas.
.
3 The typical data above is for reference only.
DN:T19722A0
https://www.microdiode.com
Rev:2019A0
Page :1
ES2AW THRU ES2JW
Reverse Voltage - 50 to 600 Volts Forward Current - 2.0 Ampere
Typical Characterisitics
Noninductive
Noninductive
+0.5
D.U.T
+
PULSE
GENERATOR
Note 2
25Vdc
approx
0
-
-0.25
1 ohm
NonInductive
OSCILLOSCOPE
Note 1
-1.0
Note:1.Rise Time = 7ns, max.
Input Impedance = 1megohm,22pF.
2. Ries Time =10ns, max.
10ns/div
Set time Base for 10ns/div
Source Impedance = 50 ohms.
Fig.3 Typical Reverse Characteristics
300
Fig.2 Maximum Average Forward Current Rating
2.4
100
2.0
1.6
1.2
TJ=125°C
10
TJ=75°C
0.8
1.0
Single phase half wave resistive
TJ=25°C
or inductive P.C.B mounted on
0.4
0.5×0.5"(12.7×12.7mm) pad areas.
0.1
0.0
25
50
75
100
125
150
175
0
20
40
60
80
100
Lead Temperature (°C)
% of PIV.VOLTS
Fig.4 Typical Forward Characteristics
Fig.5 Typical Junction Capacitance
10
1.0
TJ=25°C
30
20
10
ES2AW ~ES2DW
ES2EW /W S2GW
ES2JW
0.1
TJ=25°C
f = 1.0MHz
Vsig = 50mVp-p
0.01
0.001
0.5
1.0
1.5
2.0
2.5
0.1
1
10
100
0
Instaneous Forward Voltage (V)
Reverse Voltage (V)
Fig.6 Maximum Non-Repetitive Peak
Forward Surage Current
60
50
40
30
20
10
00
8.3 ms Single Half Sine Wave
(JEDEC Method)
1
10
100
Number of Cycles
The curve above is for reference only.
https://www.microdiode.com
Rev:2019A0
Page :2
ES2AW THRU ES2JW
Reverse Voltage - 50 to 600 Volts Forward Current - 2.0 Ampere
Packing information
unit:mm
P0
P1
d
Symbol
Item
Tolerance
SOD-123FL
E
F
Carrier width
A
0.1
0.1
0.1
0.05
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
2.1
4.0
W
Carrier length
B
B
Carrier depth
C
1.60
1.55
178.00
50.0
13.00
1.75
3.50
4.00
4.00
2.00
Sprocket hole
d
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
D
A
P
D1
D2
E
F
D2
D1
P
T
P0
P1
T
C
0.25
8.15
W1
D
W
W1
Reel width
10.5
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
Reel packing
APPROX.
GROSS WEIGHT
COMPONENT
SPACING
INNER
BOX
(m/m)
REEL
DIA,
(m/m)
CARTON
SIZE
(m/m)
BOX
(pcs)
CARTON
(pcs)
REEL
(pcs)
PACKAGE
REEL SIZE
(kg)
(m/m)
4.0
SOD-123FL
7"
3,000
178
9.0
45,000 210*208*203
430*430*235
180,000
Suggested Pad Layout
Symbol
Unit (mm)
Unit (inch)
0.047
A
B
C
D
E
1.2
0.047
1.2
3.2
2
0.126
0.079
4.4
0.173
Important Notice and Disclaimer
Microdiode Electronics (Jiangsu) reserves the right to make changes to this document and its products and
specifications at any time without notice. Customers should obtain and confirm the latest product information and
specifications before final design,purchase or use.
Microdiode Electronics (Jiangsu) makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, not does Microdiode Electronics (Jiangsu) assume any liability for application
assistance or customer product design. Microdiode Electronics (Jiangsu) does not warrant or accept any liability with
products which are purchased or used for any unintended or unauthorized application.
No license is granted by implication or otherwise under any intellectual property rights of Microdiode
Electronics (Jiangsu).
Microdiode Electronics (Jiangsu) products are not authorized for use as critical components in life support
devices or systems without express written approval of Microdiode Electronics (Jiangsu).
https://www.microdiode.com
Rev:2019A0
Page :3
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