FM150 [MDD]
1.0A Surface Mount Schottky Barrier Rectifiers - 20V-200V; 1.0A表面贴装肖特基整流器 - 20V- 200V
| 型号： | FM150 |
| 厂家： | 
Chendahang Electronics Co., Ltd |
| 描述： | 1.0A Surface Mount Schottky Barrier Rectifiers - 20V-200V |
| 文件： | 总5页 (文件大小：145K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FM120 THRU FM1200
1.0A Surface Mount Schottky Barrier
Rectifiers - 20V-200V
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SMA-F
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
0.196(4.9)
0.180(4.5)
• High current capability, low forward voltage drop.
• High surge capability.
0.012(0.3) Typ.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
0.106(2.7)
0.091(2.3)
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• Suffix "-H" indicates Halogen-free parts, ex. FM120-H.
0.068(1.7)
0.060(1.5)
Mechanical data
0.032(0.8) Typ.
0.032 (0.8) Typ.
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, DO-214AC / SMA-F
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
Dimensions in inches and (millimeters)
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.05 gram
Maximum ratings and Electrical Characteristics (AT TA=25oC unless otherwise noted)
MAX.
SYMBOL
TYP.
UNIT
A
MIN.
PARAMETER
CONDITIONS
IO
1.0
Forward rectified current
See Fig.1
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
IFSM
30
Forward surge current
A
VR = VRRM TJ = 25OC
VR = VRRM TJ = 100OC
0.5
10
IR
mA
Reverse current
CJ
pF
OC
Diode junction capacitance
Storage temperature
120
f=1MHz and applied 4V DC reverse voltage
+175
-65
TSTG
Operating
*4
*1
*3
*2
VRMS
VR
VF
SYMBOLS
VRRM
(V)
temperature
TJ, (OC)
(V)
(V)
(V)
20
30
40
50
14
21
28
35
42
56
70
105
FM120
FM130
FM140
20
30
40
50
60
*1 Repetitive peak reverse voltage
*2 RMS voltage
0.50
-55 to +125
-55 to +150
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=1.0A
FM150
FM160
FM180
FM1100
0.70
0.85
60
80
80
100
150
200
100
150
200
0.90
0.92
FM1150
FM1200
140
MDD ELECTRONIC
Rating and characteristic curves (FM120 THRU FM1200)
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
FIG.2-TYPICAL FORWARD
CHARACTERISTICS
1.2
1.0
0.8
0.6
50
10
3.0
1.0
0.4
0.2
0
0
20
40
60
80
100
120
140
160
180
200
LEAD TEMPERATURE,(°C)
TJ=25 C
Pulse Width 300us
1% Duty Cycle
0.1
.01
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3ms Single Half
TJ=25 C
Sine Wave
JEDEC method
.1
.3
.5
.7
.9 1.1 1.3 1.5
FORWARD VOLTAGE,(V)
FIG.5 - TYPICAL REVERSE
CHARACTERISTICS
100
10
NUMBER OF CYCLES AT 60Hz
FIG.4-TYPICAL JUNCTION CAPACITANCE
350
300
250
200
1.0
TJ=75 C
150
100
50
.1
TJ=25 C
0
.01
.01
.05
.1
.5
1
5
10
50
100
0
20 40 60 80 100 120 140
REVERSE VOLTAGE,(V)
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
MDD ELECTRONIC
FM120 THRU FM1200
Pinning information
Pin
Simplified outline
Symbol
Pin1 cathode
Pin2 anode
1
2
1
2
Marking
Type number
Marking code
FM120
FM130
FM140
FM150
FM160
FM180
FM1100
FM1150
FM1200
SS12
SS13
SS14
SS15
SS16
SS18
S110
S115
S120
Suggested solder pad layout
C
A
B
Dimensions in inches and (millimeters)
PACKAGE
SMA
A
B
C
0.110 (2.80)
0.063 (1.60)
0.087 (2.20)
MDD ELECTRONIC
FM120 THRU FM1200
Suggested thermal profiles for soldering processes
1.Storage environment: Temperature=5oC~40oC Humidity=55%±25%
2.Reflow soldering of surface-mount devices
Critical Zone
TL to TP
Tp
TP
Ramp-up
TL
TL
Tsmax
Tsmin
tS
Preheat
Ramp-down
25
t25oC to Peak
Time
3.Reflow soldering
Profile Feature
Soldering Condition
Average ramp-up rate(TL to TP)
<3oC/sec
Preheat
-Temperature Min(Tsmin)
-Temperature Max(Tsmax)
-Time(min to max)(ts)
150oC
200oC
60~120sec
Tsmax to TL
-Ramp-upRate
<3oC/sec
Time maintained above:
-Temperature(TL)
-Time(tL)
217oC
60~260sec
Peak Temperature(TP)
255oC-0/+5oC
Time within 5oC of actual Peak
Temperature(tP)
10~30sec
Ramp-down Rate
<6oC/sec
Time 25oC to Peak Temperature
<6minutes
MDD ELECTRONIC
FM120 THRU FM1200
High reliability test capabilities
Item Test
1. Solder Resistance
Conditions
Reference
MIL-STD-750D
METHOD-2031
at 260±5OC for 10±2sec.
immerse body into solder 1/16"±1/32"
at 245±5OC for 5 sec.
2. Solderability
MIL-STD-202F
METHOD-208
VR=80% rate at TJ=125OC for 168 hrs.
Rated average rectifier current at TA=25OC for 500hrs.
3. High Temperature Reverse Bias
4. Forward Operation Life
5. Intermittent Operation Life
6. Pressure Cooker
MIL-STD-750D
METHOD-1038
MIL-STD-750D
METHOD-1027
TA = 25OC, IF = IO
On state: power on for 5 min.
off state: power off for 5 min.
on and off for 500 cycles.
MIL-STD-750D
METHOD-1036
JESD22-A102
15PSIG at TA=121OC for 4 hrs.
-55OC to +125OC dwelled for 30 min.
7. Temperature Cycling
8. Thermal Shock
MIL-STD-750D
METHOD-1051
and transferred for 5min. total 10 cycles.
0OC for 5 min. rise to 100OC for 5 min. total 10 cycles.
MIL-STD-750D
METHOD-1056
8.3ms single half sine-wave superimposed
on rated load, one surge.
9. Forward Surge
MIL-STD-750D
METHOD-4066-2
at TA=85OC, RH=85% for 1000hrs.
at 175OC for 1000 hrs.
10. Humidity
MIL-STD-750D
METHOD-1021
11. High Temperature Storage Life
MIL-STD-750D
METHOD-1031
MDD ELECTRONIC
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