GBJ6005_V01 [MDD]
SILICON BRIDGE RECTIFIERS;
| 型号： | GBJ6005_V01 |
| 厂家： | 
Chendahang Electronics Co., Ltd |
| 描述： | SILICON BRIDGE RECTIFIERS |
| 文件： | 总2页 (文件大小：576K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GBJ6005 THRU GBJ610
Reverse Voltage - 50 to 1000 Volts Forward Current - 6.0 Amperes
SILICON BRIDGE RECTIFIERS
Features
GBJ
? .134(3.4)
? .122(3.1)
Ideal for printed circuit board
.189(4.8)
1.193(30.3)
1.169(29.7)
.173(4.4)
.150(3.8)
.134(3.4)
Reliable low cost construction utilizing molded plastic technique
Plastic material has U/L lammability classification 94V-0
Low forward voltage drop,high current capability
.118(3.0)*45°
_
+
~
~
.106(2.7)
.096(2.3)
Mechanical Data
.094(2.4)
.078(2.0)
.043(1.1)
.035(0.9)
.114(2.9)
.098(2.5)
Case : JEDEC GBJ Molded plastic body
Terminals : Solder plated, solderable per MIL-STD-750,Method 2026
Polarity : Polarity symbol marking on body
Mounting Position: Any
.031(0.8)
.023(0.6)
.402(10.2)
.386(9.8)
.303(7.7).303(7.7)
SPACING
.287(7.3)
.287(7.3)
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwisespecified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
GBJ
6005
GBJ
601
GBJ
602
GBJ
604
GBJ
606
GBJ
608
GBJ
610
Parameter
SYMBOLS
UNITS
MDD MDD MDD MDD MDD MDD MDD
Marking Code
GBJ
6005
50
GBJ
601
100
GBJ
602
200
GBJ
604
400
GBJ
606
600
GBJ
608
800
GBJ
610
1000
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
V
V
V
35
50
70
100
140
200
280
400
420
600
560
800
700
1000
Maximum DC blocking voltage
Maximum average forward(with heatsink NOTE 2)
Rectified current @T c =100°C(without heatsink)
Peak forward surge current
6.0
3.3
I(AV)
A
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Rating for Fusing(t<8.3ms)
IFSM
175.0
A
A2s
V
I2t
VF
VF
127.0
1.0
Maximum forward voltage at 3.0A DC
1.1
V
Maximum forward voltage at 6.0A DC
10
500
Maximum DC reverse current
at rated DC blocking voltage
TA=25°C
TA=125°C
μ
μ
A
A
IR
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating junction temperature range
storage temperature range
CJ
55
pF
RθJA
TJ
TSTG
1.8
°C/W
° C
° C
-55 to +150
-55 to +150
NOTES:
1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Device mounted on 75mm*75mm*1.6mm cu plate heatsink.
3.The typical data above is for reference only.
DN:T19812A0
https://www.microdiode.com
Rev:2019A0
Page :1
GBJ6005 THRU GBJ610
Reverse Voltage - 50 to 1000 Volts Forward Current - 6.0 Amperes
Ratings And Characteristic Curves
FIG.1-FORWARD CURRENT DERATING CURVE
FLG.2-MAXIMUM NON-REPETITIVE SURGE CURRENT
6.0
180
160
WITH HEATSINK
5.0
PULSE WIDTH 8.3ms
4.0
SINGLE HALF-SINE-WAVE
(JEDEC METHOD)
120
WITHOUT HEATSINK
3.0
80
2.0
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
1.0
40
0
0.00
20
40
60
100
120
140
0
80
10
NUMBER OF CYCLETS AT 60Hz
FIG.4-TYPICAL FORWARD CHARACTERISTICS
100
1
5
20
50
2
CASE TEMPERATURE, °C
FIG.3-TYPICAL JUNCTION CAPACITANCE
20.0
10.0
100
1.0
10
0.1
TJ=25°C
TJ=25°C,f=1MHZ
1.0
0.01
1.0
10.0
100
1.4
0.8
1.0
1.2
0.4
0.6
0
0.2
REVERSE VOLTAGE,(VOLTS)
INSTANTANEOUS FORWARD VOLTAGE. VOLTS
FIG.5-TYPICAL REVERSE CHARACTERISTICS
1000
100
TJ=125°C
TJ=100°C
10
TJ=50°C
TJ=25°C
1.0
0.1
0
20
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
40
60
80
100
The curve above is for reference only.
https://www.microdiode.com
Rev:2019A0
Page :2
相关型号：
GBJ601
Single Phase 6.0 AMPS. Glass Passivated Bridge Rectifiers Voltage Range 50 to 1000 Volts Current 6.0 Amperes
KINGTRONICS
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