GS3GF [MDD]

SURFACE MOUNT GENERAL RECTIFIER;
GS3GF
型号: GS3GF
厂家: Chendahang Electronics Co., Ltd    Chendahang Electronics Co., Ltd
描述:

SURFACE MOUNT GENERAL RECTIFIER

文件: 总2页 (文件大小:640K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
GS3AF THRU GS3MF  
SURFACE MOUNT GENERAL RECTIFIER  
Reverse Voltage - 50 to 1000 Volts Forward Current -  
3.0 Amperes  
SMAF  
FEATURES  
The plastic package carries Underwriters Laboratory  
Flammability Classification 94V-0  
Cathode Band  
Top View  
For surface mounted applications  
Low reverse leakage  
Built-in strain relief,ideal for automated placement  
High forward surge current capability  
0.106(2.70)  
0.094(2.40)  
0.063(1.60)  
0.051(1.30)  
Glass passivated chip junction  
0.146(3.7)  
0.130(3.3)  
0.0091(0.23)  
0.0071(0.18)  
0.051(1.30)  
0.043(1.10)  
0.051(1.30)  
0.039(1.0)  
MECHANICAL DATA  
Case  
: JEDEC SMAF molded plastic body over passivated chip  
Terminals: Solder plated, solderable per MIL-STD-750,  
Method 2026  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
Weight:0.0018 ounce, 0.064 grams  
0.193(4.90)  
0.173(4.40)  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 C ambient temperature unless otherwise specified.  
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.  
SYMBOLS  
UNITS  
MDD Catalog  
GS3AF GS3BF GS3DF GS3GF GS3JF GS3KF GS3MF  
Number  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800 1000  
560 700  
800 1000  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VOLTS  
VOLTS  
VOLTS  
VRRM  
VRMS  
VDC  
100  
Maximum DC blocking voltage  
Maximum average forward rectified current  
at TL=75 C  
I(AV)  
3.0  
Amps  
Peak forward surge current  
IFSM  
100.0  
1.2  
8.3ms single half sine-wave superimposed on  
rated load (JEDEC Method)  
Amps  
Volts  
VF  
IR  
Maximum instantaneous forward voltage at 3.0A  
Maximum DC reverse current  
at rated DC blocking voltage  
TA=25 C  
5.0  
250.0  
µ
A
TA=125 C  
Typical junction capacitance (NOTE 1)  
CJ  
pF  
C/W  
53.0  
13.0  
47.0  
RθJA  
Typical thermal resistance (NOTE 2)  
Operating junction and storage temperature range  
C
TJ,TSTG  
-50 to +150  
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.  
2.P.C.B. mounted with 0.2x0.2(5.0x5.0mm) copper pad areas  
RATINGS AND CHARACTERISTIC CURVES GS3AF THRU GS3MF  
Fig.2 Typical Instaneous Reverse  
Characteristics  
Fig.1 Forward Current Derating Curve  
100  
10  
3.0  
2.4  
TJ=150°C  
TJ=125°C  
TJ=100°C  
1.8  
1.2  
1.0  
0.1  
TJ=75°C  
TJ=50°C  
Single phase half-wave 60 Hz  
resistive or inductive load  
0.6  
0.0  
TJ=25°C  
0.01  
25  
50  
75  
100  
125  
150  
175  
0
200  
400  
600  
800  
Ambient Temperature (°C)  
Instaneous Reverse Voltage (V)  
Fig.3 Typical Forward Characteristic  
Fig.4 Typical Junction Capacitance  
1.0  
0.5  
100  
10  
1
TJ=25°C  
0.2  
0.1  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
0.1  
1.0  
10  
100  
Reverse Voltage (V)  
Instaneous Forward Voltage (V)  
The cruve graph is for reference only, can't be the basis for judgment(曲线图仅供参考)!  

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