KBP2005K [MDD]
SILICON BRIDGE RECTIFIERS;
| 型号： | KBP2005K |
| 厂家： | 
Chendahang Electronics Co., Ltd |
| 描述： | SILICON BRIDGE RECTIFIERS |
| 文件： | 总2页 (文件大小：693K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KBP2005K THRU KBP210K
SILICON BRIDGE RECTIFIERS
Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes
KBP-K
FEATURES
0.581(14.75)
0.561(14.25)
0.043(1.1)
0.031(0.8)
0.144(3.65)
0.132(3.35)
Glass passivated die construction
Low forward voltage drop
High current capability
High surge current capability
Plastic material-UL flammability 94V-O
0.417(10.6)
0.402(10.2)
0.087(2.2)
0.071(1.8)
0.056(1.42)
0.048(1.22)
0.583(14.8)
0.563(14.3)
MECHANICAL DATA
0.022(0.55)
0.012(0.3)
Case: KBP-K Molded plastic body
Terminals: Plated leads solderable per
MIL-STD-202, Method 208
0.16(4.06)
0.14(3.56)
0.034(0.86)
0.03(0.76)
Polarity: As marked on case
Mounting Position: Any
Marking : Type number
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
KBP
2005K
KBP
201K 202K
KBP
KBP
KBP
KBP
KBP
SYMBOLS
UNITS
MDD Catalog
Number
204K 206K 208K 210K
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
VOLTS
VOLTS
VOLTS
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
Maximum DC blocking voltage
Maximum average forward output rectified current
at TA=50 C(Note 1)
100
1000
2.0
I(AV)
Amps
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
50.0
Amps
IFSM
Forward voltage per element
@IF=2.0A
Volts
VF
IR
1.1
Maximum DC reverse current
at rated DC blocking voltage
TA=25 C
µ
A
5.0
0.5
25
8
TA=125 C
mA
RθJA
RθJL
Typical Thermal Resistance per leg(Note 2)
Operating junction temperature range
C/W
C
TJ,
TSTG
-55 to +150
Note:1. Mounted on glass epoxy PC board with 1.3mm2 solder pad.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C..
RATINGS AND CHARACTERISTIC CURVES KBP2005K THRU KBP210K
Fig. 2 Typical Fwd Characteristics
Fig. 1 Forward Current Derating Curve
10
2.0
1.0
0
TA
= 25°C
1.0
0.1
0
Pulse Width
=
300 µs
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
50
100
150
VF, INSTANTANEOUS FWD VOLTAGE(V)
T, TEMPERATURE (°C)
Fig. 4 Typical Junction Capacitance
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
100
100
10
0
TJ = 25°C
f = 1MHz
Single Half Sine-Wave
Pulse Width =8.3ms
(JEDEC Method)
60
50
40
30
0
0
100
10
10
NUMBER OF CYCLES AT 60 Hz
0
100
VR, REVERSE VOLTAGE (V)
The cruve graph is for reference only, can't be the basis for judgment(曲线图仅供参考)!
相关型号：
KBP200G-LF
Bridge Rectifier Diode, 1 Phase, 2A, 50V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, KBPM, SIP-4
WTE
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