MBR820 [MDD]
SCHOTTKY BARRIER RECTIFIER;
| 型号： | MBR820 |
| 厂家： | 
Chendahang Electronics Co., Ltd |
| 描述： | SCHOTTKY BARRIER RECTIFIER 二极管 |
| 文件： | 总2页 (文件大小：487K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR820 THRU MBR8100
Reverse Voltage - 20 to 100 Volts Forward Current - 8.0 Ampere
SCHOTTKY BARRIER RECTIFIER
Features
TO-220AC
0.185(4.70)
0.175(4.44)
The plastic package carries Underwriters
Laboratory Flammability Classification 94V-0
Construction utilizes void-free
0.154(3.91)
DIA
0.415(10.54)
MAX
0.148(3.74)
0.057(1.45)
0.051(1.30)
0.113(2.87)
0.103(2.62)
molded plastic technique
0.145(3.68)
Low reverse leakage
0.135(3.43)
0.560(14.2)
0.530(13.4)
0.410(10.41)
0.390(9.91)
High forward surge current capability
High temperature soldering guaranteed:
250°C,0.25”(6.35mm) from case for 10 seconds
0.350(8.89)
0.330(8.38)
0.635(16.13)
0.625(15.87)
PIN
1
1.148(29.16)
1.118(28.40)
0.160 (4.05)
0.140 (3.55)
0.110(2.79)
0.100(2.54)
0.590(14.22)
0.530(13.46)
0.037(0.94)
0.027(0.68)
0.105 (2.67)
0.095 (2.41)
Mechanical Data
0.022(0.58)
0.014(0.35)
0.205 (5.20)
0.195 (4.95)
PIN 1
PIN 2
Case : JEDEC TO-220AC Molded plastic body
Terminals : Solder plated, solderable per MIL-STD-750,Method 2026
Polarity : Polarity symbol marking on body
Mounting Position: Any
CASE
Dimensions in inches and (millimeters)
Weight
: 0.064 ounce, 1.81 grams
Maximum Ratings And Electrical Characteristics
Ratings at 25°C ambient temperature unlss otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MBR MBR MBR MBR MBR MBR MBR MBR MBR MBR
820 830 840 845 850 860 870 880 890 8100
Parameter
SYMBOLS
UNITS
MDD MDD MDD MDD MDD MDD MDD MDD MDD MDD
MBR MBR MBR MBR MBR MBR MBR MBR MBR MBR
820 830 840 845 850 860 870 880 890 8100
Marking Code
V
RMM
RMS
20
14
20
30
21
30
40
28
40
45
32
45
50
35
50
60
42
60
70
49
70
80
56
80
90 100
63 70
90 100
Maximum repetitive peak reverse voltage
Maximum RMS voltage
V
V
V
V
V
DC
Maximum DC blocking voltage
Maximum average forward rectified
current (see fig.1)
I
(AV)
A
8.0
Peak forward surge current
8.3ms single half sine-wave
A
I
FSM
150
superimposed onrated load (JEDEC Method)
Maximum instantaneous forward voltage at 10.0A
V
F
0.65
0.75
1.0
0.85
V
Maximum DC reverse current
at rated DC blocking voltage
TA=25℃
TA=100℃
mA
I
R
15.0
50.0
250
C
J
300.0
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction temperature range
storage temperature range
pF
℃/W
℃
R
θ
JA
3.0
T
J
-65 to +125
-65 to +150
℃
T
STG
-65 to +150
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to case
DN:T19823A0
https://www.microdiode.com
Rev:2019A0
Page :1
MBR820 THRU MBR8100
Reverse Voltage - 20 to 100 Volts Forward Current - 8.0 Ampere
Ratings And Characteristic Curves
FIG. 1- FORWARD CURRENT DERATING CURVE
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
150
10
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
8
125
6
4
2
0
Single Phase
Half Wave 60Hz
Resistive or
100
75
inductive Load
MBR820-MBR845
MBR850-MBR8100
50
0
25
50
75
100
125
150
175
25
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
100
50
10
10
1
TJ=100 C
TJ=25 C
1
0.1
PULSE WIDTH=300 µs
1%DUTY CYCLE
TJ=75 C
TJ=25 C
0.1
MBR820-MBR845
MBR850-MBR860
MBR870-MBR8100
0.01
0.001
0.01
0.2
0.4
0.6
0.8
1.0
1.1
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 5-TYPICAL JUNCTION CAPACITANCE
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
2000
1000
100
10
1
TJ=25 C
100
MBR820-MBR845
MBR850-MBR8100
0.1
0.01
0.1
1
10
100
10
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
The curve above is for reference only.
https://www.microdiode.com
Rev:2019A0
Page :2
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