MBRD8150D [MDD]
SCHOTTKY BARRIER GLASS PASSIVATED RECTIFIERS;型号: | MBRD8150D |
厂家: | Chendahang Electronics Co., Ltd |
描述: | SCHOTTKY BARRIER GLASS PASSIVATED RECTIFIERS |
文件: | 总4页 (文件大小:1376K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MBRD840T(D) HRU MBRD8200T(D)
T
Reverse Voltage - 0 to 00 Volts Forward Current .0 Ampere
- 8
4
2
SCHOTTKY BARRIER GLASS PASSIVATED RECTIFIERS
TO-251(I-PAK)
TO-252(D-PAK)
FEATURES
High current capability
Low forward voltage drop
Low power loss, high efficiency
High surge capability
High temperature soldering guaranteed
Mounting position: any
MECHANICAL DATA
Case: TO-251/252 molded plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight:0.0141 ounce(approx), 0.4 grams (approx)
PACKAGE SPECIFICATIONS
Box Size
(mm)
QTY/Box
(pcs)
Q'TY/Carton
(pcs)
Carton Size
(mm)
Reel DIA.
(mm)
Q'TY/Reel
(pcs)
Package
Reel Size
TO-251
13'
13'
2500
2500
340×336×29
340×336×29
2500
25000
25000
330
330
353×346×365
353×346×365
TO-252
2500
MAXIMUM RATINGS AND ELECTRICALCHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MBRD
40
MBRD MBRD
40
45
MBRD
45
MBRD
60
MBRD
60
MBRD
100
MBRD
810
MBRD
150
MBRD
150
MBRD
200
MBRD
200
TO-251
TO-252
8
T
8
T
8
T
8
T
8
T
8
T
MCHARACTERISTICS
UNITS
8
D
8
D
0
D
8
D
8
D
8
D
Maximum repetitive peak reverse voltage
Maximum RMS voltage
45
60
42
60
100
70
150
105
150
200
140
200
V
V
V
40
28
40
VRRM
VRMS
31.5
45
Maximum DC blocking voltage
100
VDC
Maximum average forward rectified current
I(AV)
8.0
A
Peak forward surge current
IFSM
110
8.3ms single half sine-wave
A
superimposed onrated load (JEDEC Method)
Maximum instantaneous forward voltage at 10.0A
0.85
VF
IR
0.70
0.65
0.90
0.92
V
Maximum DC reverse current
at rated DC blocking voltage
TA=25℃
TA=125℃
0.1
20
0.5
20
mA
600
Typical junction capacitance (NOTE 1)
400
CJ
RθJA
pF
℃/W
℃
Typical thermal resistance (NOTE 2)
Operating junction and storage temperature range
35
TJ,TSTG
-55 to +150
-55 to +175
Note:1.Measured at 1.0MHz and applied reverse voltage of 4.0V D.C.
2.Mounted on 10cm x 10cm x 1mm copper pad area
3.
The typical data above is for reference only.
DN:T19603A1
https://www.microdiode.com
Rev:2019A1
Page :1
MBRD840T(D) HRU MBRD8200T(D)
T
Reverse Voltage - 0 to 00 Volts Forward Current .0 Ampere
4
2
- 8
Rating and Characteristic Curves
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
FIG.2-TYPICAL FORWARD
CHARACTERISTICS
12.0
10.0
8.0
50
6.0
10
3.0
1.0
4.0
2.0
0
0
20
40
60
80
100
120
140
160
180
200
CASE TEMPERATURE,(°C)
Tj=25 C
Pulse Width 300us
1% Duty Cycle
0.1
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
150
.01
0.1
0.3
1.5
0.5
0.7 0.9 1.1
1.3
120
90
FORWARD VOLTAGE,(V)
60
30
8.3ms Single Half
Sine Wave
FIG.4 - TYPICAL REVERSE
CHARACTERISTICS
Tj=25 C
JEDEC method
100
40V~100V
0
150V~200V
50
1
5
10
100
10
NUMBER OF CYCLES AT 60Hz
TJ
=100°C
1.0
0.1
T
J
=25°C
0.01
0.001
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
The curve above is for reference only.
https://www.microdiode.com
Rev:2019A1
Page :2
MBRD840T(D) HRU MBRD8200T(D)
T
Reverse Voltage - 0 to 00 Volts Forward Current .0 Ampere
- 8
4
2
Outlitne Drawing
TO-252(D-PAK) Package Outline Dimensions
https://www.microdiode.com
Rev:2019A1
Page :3
MBRD840T(D) HRU MBRD8200T(D)
T
Reverse Voltage - 0 to 00 Volts Forward Current .0 Ampere
- 8
4
2
Outlitne Drawing
TO-251(I-PAK) Package Outline Dimensions
Important Notice and Disclaimer
Microdiode Electronics (Jiangsu) reserves the right to make changes to this document and its
products and specifications at any time without notice. Customers should obtain and confirm the
latest product information and specifications before final design,purchase or use.
Microdiode Electronics (Jiangsu) makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, not does Microdiode Electronics
(Jiangsu) assume any liability for application assistance or customer product design. Microdiode
Electronics (Jiangsu) does not warrant or accept any liability with products which are purchased
or used for any unintended or unauthorized application.
No license is granted by implication or otherwise under any intellectual property rights of
Microdiode Electronics (Jiangsu).
Microdiode Electronics (Jiangsu) products are not authorized for use as critical components
in life support devices or systems without express written approval of Microdiode Electronics
(Jiangsu).
https://www.microdiode.com
Rev:2019A1
Page :4
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