MBRF30100CT [MDD]
SCHOTTKY BARRIER RECTIFIER;
| 型号： | MBRF30100CT |
| 厂家： | 
Chendahang Electronics Co., Ltd |
| 描述： | SCHOTTKY BARRIER RECTIFIER 局域网 功效 二极管 |
| 文件： | 总2页 (文件大小：588K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBRF3020CT THRU MBRF30100CT
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 100 Volts Forward Current - 30.0 Amperes
ITO-220AB
FEATURES
4.5± 0.2
10.2± 0.2
+0.2
-0.1
High surge capacity.
3.1
For use in low voltage, high frequency inverters,free
wheeling,and polarity protection applications.
Metal silicon junction,majority carrier conduction.
High current capability,low forward voltage drop.
Guard ring for over voltage protection.
PIN
1
2
3
4.0± 0.3
2.6± 0.2
1.4± 0.1
0.6± 0.1
MECHANICAL DATA
Case: ITO-220AB molded plastic body
Terminals: Leads solderable per MIL-STD-750,
Method 2026
0.6± 0.1
2.6± 0.15
PIN 2
CASE
PIN 1
PIN 3
Polarity: As marked
Mounting Position: Any
Weight:0.060 ounce, 1.67 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MBRF MBRF MBRF MBRF
3070CT 3080CT 3090CT 30100CT
MBRF MBRF MBRF MBRF MBRF MBRF
3020CT 3030CT 3040CT 3045CT 3050CT 3060CT
SYMBOLS
MDD Catalog
Number
UNITS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VOLTS
VOLTS
VOLTS
20 30
14 21
20 30
40 45 50
28 32 35
40 45 50
60 70 80 90 100
42 49 56 63 70
60 70 80 90 100
VRRM
VRMS
VDC
Maximum DC blocking voltage
Maximum average forward rectified current
(see fig.1)
I(AV)
30.0
Amps
Peak forward surge current
IFSM
250.0
0.75
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Amps
VF
IR
0.55
0.85
Maximum instantaneous forward voltage at 15.0A
Volts
mA
Maximum DC reverse current
at rated DC blocking voltage
TA=25 C
1.0
TA=100 C
15.0
750
50.0
500
Typical junction capacitance (NOTE 1)
CJ
pF
C/W
C
Typical thermal resistance (NOTE 2)
Operating junction temperature range
RθJC
2.0
-55 to +125
-55 to +150
TJ
Storage temperature range
C
TSTG
-55 to +150
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to case
RATINGS AND CHARACTERISTIC CURVES MBRF3020CT THRU MBRF30100CT
FIG. 1- FORWARD CURRENT DERATING CURVE
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
300
30
24
18
12
6
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
250
Single Phase
Half Wave 60Hz
Resistive or
200
150
100
50
inductive Load
MBRF3020CT-MBRF3045CT
MBRF3050CT-MBRF30100CT
0
0
25
50
75
100
125
150
175
1
10
100
AMBIENT TEMPERATURE,
C
NUMBER OF CYCLES AT 60 Hz
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
100
250
50
10
1
TJ=100 C
TJ=25 C
5
0.5
PULSE WIDTH=300 µs
1%DUTY CYCLE
TJ=75 C
TJ=25 C
0.1
MBRF3020CT-MBRF3045CT
MBRF3050CT-MBRF3060CT
MBRF3070CT-MBRF30100CT
0.01
0.001
0.05
0.2
0.4
0.6
0.8
1.0
1.1
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 5-TYPICAL JUNCTION CAPACITANCE
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
2000
1000
100
10
1
TJ=25 C
100
MBRF3020CT-MBRF3045CT
MBRF3050CT-MBRF30100CT
0.1
0.01
0.1
1
10
100
10
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
The cruve graph is for reference only, can't be the basis for judgment(曲线图仅供参考)!
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