MURS450 [MDD]
SURFACE MOUNT SUPER FAST RECTIFIER; 表面装载超快速整流器
| 型号： | MURS450 |
| 厂家： | 
Chendahang Electronics Co., Ltd |
| 描述： | SURFACE MOUNT SUPER FAST RECTIFIER |
| 文件： | 总2页 (文件大小：229K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MURS405 THRU MURS460
SURFACE MOUNT SUPER FAST RECTIFIER
4.0 Amperes
Reverse Voltage - 50 to 600 Volts Forward Current -
FEATURES
DO-214AB/SMC
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Low reverse leakage
0.245(6.22)
0.220(5.59)
0.126 (3.20)
0.114 (2.90)
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
0.280(7.11)
0.260(6.60)
Glass passivated chip junction
0.012(0.305)
0.006(0.152)
0.103(2.62)
0.079(2.06)
MECHANICAL DATA
Case : JEDEC DO-214AB molded plastic body over passivated chip
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
0.060(1.52)
0.030(0.76)
0.008(0.203)MAX.
Polarity : Color band denotes cathode end
Mounting Position : Any
0.320(8.13)
0.305(7.75)
Weight :0.007 ounce, 0.25grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
MURS MURS MURS MURS MURS MURS MURS
MURS
405
UNITS
410
415
420
430
440
450
460
MDD Catalog
Number
Maximum recurrent peak reverse voltage
Maximum RMS voltage
50
35
50
100
70
150
105
150
200
140
200
300
210
300
400
280
400
500
350
500
600
420
600
V
V
V
VRRM
VRMS
VDC
Maximum DC blocking voltage
Maximum average forw ard rectified current
@TA=75
100
4.0
A
IF(AV)
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load @TJ=125
IFSM
125.0
A
Maximum instantaneous forw ard voltage
@ 4.0A
0.89
25
1.28
VF
IR
V
A
Maximum reverse current
@TA=25
10.0
at rated DC blocking voltage @TA=125
100.0
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance
(Note1)
50
ns
pF
/W
trr
(Note2)
(Note3)
95
20
CJ
Rθ
JA
Operating junction temperature range
Storage temperature range
- 55 to + 150
- 55 to + 150
TJ
TSTG
NOTE: 1. Measured with IF=0.5A, IR=1A, Irr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
MDD ELECTRONIC
RATINGS AND CHARACTERISTIC CURVES MURS405 THRU MURS460
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
10
N 1.
N 1.
trr
+0.5A
D.U.T.
(+)
PULSE
GENERATOR
(NOTE2)
0
25VDC
(approx)
(-)
-0.25A
OSCILLOSCOPE
(NOTE 1)
1
NONIN-
DUCTIVE
-1.0A
1cm
SETTIMEBASEFOR10/20 ns/cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF.
JJJJ 2.RISETIME =10ns MAX.SOURCE IMPEDANCE=50
.
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
FIG.3 -- TYPICAL REVERSE CHARACTERISTIC
80
40
20
100
TJ=150℃
MURS430-MURS460
40
8.0
20
4.0
2.0
MURS405-MURS420
10
0.8
TJ=100℃
0.4
0.2
0.08
4.0
2.0
1.0
0.04
0.02
TJ=25℃
0.008
0.004
0.4
TJ=25
Pulse Width=300µs
0.2
0.002
0.1
2.4
0
1.2
1.6
2.0
0
0.4
0.8
20 40 60 80 100
120 140 160 180 200
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
PERCENTAGE OF RATED PEAK REVERSE VOLTAGE,%
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
z
FIG.5--FORWORD DERATING CURVE
4.0
3.5
3.0
1000
600
400
200
100
60
2.5
Single Phase
Half Wave 60H
Resistive or
Inductive Load
40
Z
2.0
TJ=25
f=1.0MHz
20
0.375"(9.5mm)Lead length
1.5
1.0
10
0.1 0.2 0.4
1
2
4
10 20 40 100
0
25
50
75 100 125 150 175
AMBIENT TEMPERATURE,
REVERSE VOLTAGE, VOLTS
MDD ELECTRONIC
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