P600B [MDD]

GENERAL PURPOSE SILICON RECTIFIER; 通用硅整流
P600B
型号: P600B
厂家: Chendahang Electronics Co., Ltd    Chendahang Electronics Co., Ltd
描述:

GENERAL PURPOSE SILICON RECTIFIER
通用硅整流

文件: 总2页 (文件大小:83K)
中文:  中文翻译
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P600A THRU P600M  
GENERAL PURPOSE SILICON RECTIFIER  
Reverse Voltage - 50 to 1000 Volts Forward Current -  
6.0 Amperes  
FEATURES  
R-6  
The plastic package carries Underwriters Laboratory  
Flammability Classification 94V-0  
Construction utilizes void-free  
1.0 (25.4)  
MIN.  
molded plastic technique  
Low reverse leakage  
High forward surge current capability  
High temperature soldering guaranteed:  
0.360 (9.1)  
0.340(8.6)  
DIA.  
0.360(9.1)  
0.340(8.6)  
250 C/10 seconds,0.375(9.5mm) lead length,  
5 lbs. (2.3kg) tension  
1.0 (25.4)  
MIN.  
MECHANICAL DATA  
Case: R-6 molded plastic body  
0.052 (1.3)  
0.048 (1.2)  
DIA.  
Terminals: Plated axial leads, solderable per MIL-STD-750,  
Method 2026  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
Weight:0.072 ounce, 2.05 grams  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 C ambient temperature unless otherwise specified.  
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.  
SYMBOLS  
UNITS  
P600A P600B P600D P600G P600J P600K P600M  
MDD Catalog  
Number  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
50  
35  
50  
100  
70  
200 400  
140 280  
200 400  
600  
420  
600  
800 1000 VOLTS  
VRRM  
VRMS  
VDC  
560  
700  
VOLTS  
100  
800 1000 VOLTS  
Maximum DC blocking voltage  
Maximum average forward rectified current  
0.375(9.5mm) lead length at TA=60 C  
Peak forward surge current  
I(AV)  
6.0  
Amps  
IFSM  
400  
8.3ms single half sine-wave superimposed on  
rated load (JEDEC Method)  
Amps  
Volts  
VF  
IR  
0.95  
Maximum instantaneous forward voltage at 6.0A  
Maximum DC reverse current  
at rated DC blocking voltage  
TA=25 C  
10.0  
400  
µ
A
TA=100 C  
Typical junction capacitance (NOTE 1)  
CJ  
RθJA  
pF  
C/W  
C
200  
Typical thermal resistance (NOTE 2)  
Operating junction and storage temperature range  
10.0  
TJ,TSTG  
-65 to +175  
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.  
2.Thermal resistance from junction to ambient at 0.375(9.5mm)lead length,P.C.B. mounted  
MDD ELECTRONIC  
RATINGS AND CHARACTERISTIC CURVES P600A THRU P600M  
FIG. 1- FORWARD CURRENT DERATING CURVE  
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD  
SURGE CURRENT  
400  
320  
240  
160  
6.0  
4.8  
3.6  
2.4  
1.2  
0
Single Phase  
Half Wave 60Hz  
Resistive or  
inductive Load  
8.3ms SINGLE HALF SINE-WAVE  
(JEDEC Method)  
80  
0
0
25  
50  
75  
100  
125  
150  
175  
1
10  
100  
AMBIENT TEMPERATURE, C  
NUMBER OF CYCLES AT 60 Hz  
FIG. 3-TYPICAL INSTANTANEOUS FORWARD  
CHARACTERISTICS  
FIG. 4-TYPICAL REVERSE CHARACTERISTICS  
1,000  
100  
10  
200  
100  
TJ=150 C  
TJ=100 C  
10  
1
TJ=25 C  
PULSE WIDTH=300 µ  
s
1
1%DUTY CYCLE  
0.1  
0.01  
0.1  
TJ=25 C  
0.5  
0.7  
0.9  
1.1  
1.3 1.4  
0
20  
40  
60  
80  
100  
INSTANTANEOUS FORWARD VOLTAGE,  
VOLTS  
PERCENT OF PEAK REVERSE VOLTAGE,%  
FIG. 5-TYPICAL JUNCTION CAPACITANCE  
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE  
2000  
1000  
100  
10  
1
TJ=25 C  
100  
0.1  
0.01  
0.1  
1
10  
100  
10  
0.1  
1.0  
10  
100  
REVERSE VOLTAGE,VOLTS  
t,PULSE DURATION,sec.  
MDD ELECTRONIC  

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