RS3M [MDD]
SURFACE MOUNT FAST RECOVERY RECTIFIER Reverse Voltage - 50 to 1000 Volts; 表面装载快速恢复整流反向电压 - 50到1000伏特
| 型号： | RS3M |
| 厂家： | 
Chendahang Electronics Co., Ltd |
| 描述： | SURFACE MOUNT FAST RECOVERY RECTIFIER Reverse Voltage - 50 to 1000 Volts |
| 文件： | 总2页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RS3A THRU RS3M
SURFACE MOUNT FAST RECOVERY RECTIFIER
Reverse Voltage - 50 to 1000 Volts Forward Current -
3.0 Amperes
DO-214AA/SMB
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Low reverse leakage
0.155(3.94)
0.130(3.30)
0.087 (2.20)
0.071 (1.80)
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
0.180(4.57)
0.160(4.06)
Glass passivated chip junction
0.012(0.305)
0.006(0.152)
0.122(3.12)
0.110(2.82)
MECHANICAL DATA
Case
: JEDEC DO-214AA molded plastic body over passivated chip
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Color band denotes cathode end
Mounting Position : Any
0.060(1.52)
0.030(0.76)
0.008(0.203)MAX.
0.220(5.59)
0.205(5.21)
Weight :0.003 ounce, 0.093 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
RS3A RS3B RS3D RS3G RS3J RS3K RS3M
UNITS
MDD Catalog
Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
50
35
50
100
70
200 400
140 280
200 400
600
420
600
800 1000
560 700
800 1000
VOLTS
VOLTS
VOLTS
VRMS
VDC
100
Maximum DC blocking voltage
Maximum average forward rectified current
at TL=75 C
I(AV)
3.0
Amps
Peak forward surge current
IFSM
VF
100.0
1.3
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Amps
Volts
Maximum instantaneous forward voltage at 3.0A
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time
TA=25 C
TA=100 C
(NOTE 1)
5.0
100.0
µ
A
IR
trr
ns
150
250
500
Typical junction capacitance (NOTE 2)
CJ
RθJA
pF
C/W
C
60.0
50.0
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
TJ,TSTG
-50 to +150
Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
MDD ELECTRONIC
RATINGS AND CHARACTERISTIC CURVES RS3A THRU RS3M
FIG. 1- FORWARD CURRENT DERATING CURVE
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
100
3.0
2.4
1.8
1.2
0.6
0
80
60
Single Phase
Half Wave 60Hz
Resistive or
40
inductive Load
20
0
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
25
50
75
100
125
150
175
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
1,000
100
10
20
10
1
0.1
TJ=100 C
TJ=25 C
PULSE WIDTH=300 µs
1%DUTY CYCLE
1
0.1
0.01
0.01
TJ=25 C
0.6
0.8
1.0
1.2
1.4
1.5
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 5-TYPICAL JUNCTION CAPACITANCE
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
200
100
100
10
1
TJ=25 C
10
0.1
0.01
0.1
1
10
100
1
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
MDD ELECTRONIC
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