S07DSB [MDD]
SU RFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER; 苏RFACE MOUNT通用硅整流
| 型号： | S07DSB |
| 厂家： | 
Chendahang Electronics Co., Ltd |
| 描述： | SU RFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER |
| 文件： | 总2页 (文件大小：133K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S07A THRU S07M
RFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER
SU
Reverse Voltage - 50 to 1000 Volts Forward Current - 0.7 Ampere
FEATURES
SOD-123FL
Cathode Band
Top View
Glass passivated device
Ideal for surface mouted applications
Low reverse leakage
Metallurgically bonded construction
High temperature soldering guaranteed:
2.8±0.1
250 C/10 seconds,0.375”(9.5mm) lead length,
5 lbs. (2.3kg) tension
0.6±0.25
MECHANICAL DATA
Case: JEDEC SOD-123FL molded plastic body over passivated chip
Terminals: Solderable per MIL-STD-750,
Method 2026
3.7±0.2
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight:0.0007 ounce, 0.02 grams
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
S07B
SB
S07D
SD
SYMBOLS S07A
S07G
SG
S07J
SJ
S07K
SK
S07M
SM
UNITS
SA
MDD Catalog
Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000 VOLTS
VOLTS
50
35
50
VRRM
VRMS
VDC
700
100
1000 VOLTS
Maximum DC blocking voltage
Maximum average forward rectified current
at TA=65 C (NOTE 1)
I(AV)
0.7
Amp
Peak forward surge current
IFSM
25.0
1.1
8.3ms single half sine-wave superimposed on
Amps
Volts
rated load (JEDEC Method)
TL=25 C
VF
IR
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
at rated DC blocking voltage
TA=25 C
10.0
50.0
µ
A
TA=125 C
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
CJ
RθJA
pF
K/W
C
4
180
Operating junction and storage temperature range
TJ,TSTG
-50 to +150
Note:
1.Averaged over any 20ms period.
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.Thermal resistance from junction to ambient at 0.375” (9.5mm)lead length,P.C.B. mounted
MDD ELECTRONIC
RATINGS AND CHARACTERISTIC CURVES S07A THRU S07M
FIG.1 --TYPICAL FORWARD CHARACTERISTIC
FIG.2 -- TYPICAL JUNCTION CAPACITANCE
1000
10
9
8
7
6
5
4
3
2
1
0
TJ = 150°C
TJ = 25°C
TJ = 100°C
100
600
0
5
10
15
20
25
30
35
40
700
800
900
1000
1100
INSTANTANEOUS FORWARD VOLTAGE,mV
REVERSE VOLTAGE,VOLTS
FIG.3 -- TYPICAL INSTANTANEOUS
FIG.4 -- FORWARD DERATING CURVE
REVERSE CHARACTERISTICS
1.2
100
Resistive or Inductive Load
1.0
0.8
0.6
0.4
0.2
0
TJ = 150°C
10
TJ = 125°C
TJ = 100°C
1
TJ = 75°C
TJ = 50°C
0.1
3.0 x 3.0mm 40µm
Thick Copper Pad Areas
TJ = 25°C
0.01
0
20
40
60
80
100
120 140
160
0
100 200 300 400 500 600 700 800 900
INSTANTANEOUS REVERSE VOLTAGE,V
AMBIENTTEMPERATURE,
MDD ELECTRONIC
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