SB3200 [MDD]
SCHOTTKY BARRIER RECTIFIER; 肖特基势垒整流器
| 型号： | SB3200 |
| 厂家： | 
Chendahang Electronics Co., Ltd |
| 描述： | SCHOTTKY BARRIER RECTIFIER |
| 文件： | 总2页 (文件大小：123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SB320 THRU SB3200
SCHOTTKY BARRIER RECTIFIER
3.0 Amperes
Reverse Voltage - 20 to 200 Volts Forward Current -
DO-201AD
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Metal silicon junction,majority carrier conduction
Low power loss,high efficiency
1.0 (25.4)
MIN.
High forward surge current capability
High temperature soldering guaranteed:
0.220(5.6)
0.197(5.0)
DIA.
250 C/10 seconds,0.375”(9.5mm) lead length,
5 lbs. (2.3kg) tension
0.375 (9.50)
0.285(7.20)
1.0 (25.4)
MIN.
MECHANICAL DATA
Case: JEDEC DO-201AD molded plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
0.052 (1.3)
0.048 (1.2)
DIA.
Polarity: Color band denotes cathode end
Mounting Position: Any
Dimensions in inches and (millimeters)
Weight:0.04 ounce, 1.10 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SB SB SB SB SB
370 380 390 3B0 3150
SB
3200
SB SB SB SB SB
320 330 340 350 360
SYMBOLS
MDD Catalog
Number
UNITS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
20 30 40 50 60 70 80 90 100 150
14 21 28 35 42 49 56 63 70 105
20 30 40 50 60 70 80 90 100 150
VOLTS
VOLTS
VOLTS
200
140
200
VRRM
VRMS
VDC
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length(see fig.1)
Peak forward surge current
I(AV)
3.0
Amps
IFSM
80.0
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Amps
VF
IR
0.55
250
0.70
0.85
0.95
Maximum instantaneous forward voltage at 3.0A
Volts
mA
Maximum DC reverse current
at rated DC blocking voltage
TA=25 C
0.5
0.2
2.0
TA=100 C
20.0
10.0
160
Typical junction capacitance (NOTE 1)
CJ
pF
C/W
C
Typical thermal resistance (NOTE 2)
Operating junction temperature range
RθJA
40.0
-65 to +125
-65 to +150
TJ,
Storage temperature range
C
TSTG
-65 to +150
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
MDD ELECTRONIC
RATINGS AND CHARACTERISTIC CURVES SB320 THRU SB3200
FIG. 1- FORWARD CURRENT DERATING CURVE
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
80
64
48
32
3
2.4
1.8
1.2
0.6
0
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
SB320-SB360
SB370-SB3200
16
0
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
25
50
75
100
125
150
175
1
10
100
AMBIENT TEMPERATURE,
C
NUMBER OF CYCLES AT 60 Hz
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
100
20
10
10
1
TJ=100 C
TJ=75 C
1
0.1
TJ=25 C
PULSE WIDTH=300 µs
1%DUTY CYCLE
SB320-SB340
SB350-SB360
SB370-SB3150
SB3200
0.1
0.01
TJ=25 C
0.01
0.2
0.4
0.6
0.8
1.0 1.1
0.001
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
FIG. 5-TYPICAL JUNCTION CAPACITANCE
100
2000
1000
SB320-SB340
SB350-SB3200
10
1
100
TJ=25 C
0.1
0.01
0.1
1
10
100
10
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
MDD ELECTRONIC
相关型号：
SB320A-E3
DIODE 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-201AD, LEAD FREE, PLASTIC PACKAGE-2, Rectifier Diode
VISHAY
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