SB5150 [MDD]
SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 200 Volts Forward Current - 5.0 Amperes; 肖特基整流器反向电压 - 20到200伏特正向电流 - 5.0安培
| 型号： | SB5150 |
| 厂家： | 
Chendahang Electronics Co., Ltd |
| 描述： | SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 200 Volts Forward Current - 5.0 Amperes |
| 文件： | 总2页 (文件大小：123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SB520 THRU SB5200
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 200 Volts Forward Current -
5.0 Amperes
DO-201AD
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Construction utilizes void-free
1.0 (25.4)
MIN.
molded plastic technique
0.210 (5.6)
0.197 (5.0)
DIA.
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375”(9.5mm) lead length,
5 lbs. (2.3kg) tension
0.375 (9.50)
0.285(7.20)
1.0 (25.4)
MIN.
MECHANICAL DATA
0.052 (1.3)
0.048 (1.2)
DIA.
Case: JEDEC DO-201AD molded plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Dimensions in inches and (millimeters)
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight:0.04 ounce, 1.10 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SB SB
SB SB
SB SB
5150 5200
SB SB SB SB SB
520 530 540 550 560
SYMBOLS
MDD Catalog
Number
UNITS
570 580 590 5B0
Maximum repetitive peak reverse voltage
Maximum RMS voltage
20 30 40 50 60 70 80 90 100
14 21 28 35 42 49 56 63 70
20 30 40 50 60 70 80 90 100
VOLTS
VOLTS
VOLTS
150 200
105 140
150 200
VRRM
VRMS
VDC
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length(see fig.1)
Peak forward surge current
I(AV)
5.0
Amps
IFSM
150.0
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Amps
VF
IR
Maximum instantaneous forward voltage at 5.0A
0.85
0.95
0.2
0.55
500
0.70
0.5
Volts
mA
Maximum DC reverse current
at rated DC blocking voltage
TA=25 C
TA=100 C
20.0
10.0
400
2.0
Typical junction capacitance (NOTE 1)
CJ
pF
C/W
C
Typical thermal resistance (NOTE 2)
Operating junction temperature range
RθJA
25.0
-65 to +150
-65 to +150
-65 to +125
TJ,
Storage temperature range
C
TSTG
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
MDD ELECTRONIC
RATINGS AND CHARACTERISTIC CURVES SB520 THRU SB5200
FIG. 1- FORWARD CURRENT DERATING CURVE
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
150
125
100
75
5
4
3
2
1
0
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
SB520-SB560
SB570-SB5200
50
25
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
25
50
75
100
125
150
175
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
100
20
10
10
1
TJ=100 C
TJ=75 C
1
0.1
TJ=25 C
PULSE WIDTH=300 µs
1%DUTY CYCLE
SB520-SB540
SB550-SB560
SB570-SB5150
SB5200
0.1
TJ=25 C
0.01
0.001
0.01
0.2
0.4
0.6
0.8
1.0 1.1
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
FIG. 5-TYPICAL JUNCTION CAPACITANCE
100
10
1
2000
1000
TJ=25 C
100
SB520-SB540
SB550-SB5200
0.1
0.01
0.1
1
10
100
10
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
MDD ELECTRONIC
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