SK1200 [MDD]
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER; 表面贴装肖特基整流器
| 型号： | SK1200 |
| 厂家： | 
Chendahang Electronics Co., Ltd |
| 描述： | SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
| 文件： | 总2页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SK12 THRU SK1200
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 200 Volts Forward Current -
1.0 Ampere
DO-214AC
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
0.110(2.80)
0.100(2.54)
0.067 (1.70)
0.051 (1.30)
For surface mounted applications
Metal silicon junction,majority carrier conduction
Low power loss,high efficiency
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
0.177(4.50)
0.157(3.99)
0.012(0.305)
0.006(0.152)
0.096(2.42)
0.078(1.98)
MECHANICAL DATA
0.060(1.52)
0.030(0.76)
0.008(0.203)MAX.
Case: JEDEC DO-214AC molded plastic body
Terminals: leads solderable per MIL-STD-750,
Method 2026
0.208(5.28)
0.188(4.80)
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight:0.002 ounce, 0.07 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
SK1150 SK1200
SK12 SK13 SK14 SK15 SK16 SK18 SK110
UNITS
MDD Catalog
Number
20
14
20
30
21
30
40
28
40
Maximum repetitive peak reverse voltage
Maximum RMS voltage
50
35
50
60
42
60
80 100
56 70
80 100
VOLTS
VOLTS
VOLTS
150
105
150
200
140
200
VRRM
VRMS
VDC
Maximum DC blocking voltage
Maximum average forward rectified current
at TL(see fig.1)
I(AV)
1.0
Amp
Peak forward surge current
IFSM
30.0
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Amps
VF
IR
Maximum instantaneous forward voltage at 1.0A
0.95
0.45
0.55
10.0
0.70
0.5
0.85
Volts
mA
Maximum DC reverse current
at rated DC blocking voltage
TA=25 C
0.2
2.0
TA=100 C
5.0
90
Typical junction capacitance (NOTE 1)
CJ
pF
C/W
C
110
Typical thermal resistance (NOTE 2)
Operating junction temperature range
RθJA
88.0
-50 to +150
-50 to +125
-50 to +150
TJ,
Storage temperature range
C
TSTG
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
MDD ELECTRONIC
RATINGS AND CHARACTERISTIC CURVES SK12 THRU SK1200
FIG. 1- FORWARD CURRENT DERATING CURVE
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
30
24
18
12
1.0
0.8
0.6
0.4
0.2
0
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
SK12-SK16
6
0
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
SK18-SK1200
0
25
50
75
100
125
150
175
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
50
100
TJ=25 C
10.0
10
1
TJ=100 C
TJ=75 C
1
0.1
0.01
SK12-SK14
SK15-SK16
SK18-SK1150
SK1200
0.1
TJ=25 C
0.001
0
20
40
60
80
100
0.01
PERCENT OF PEAK REVERSE VOLTAGE,%
0
0.2 0.4
0.6
0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG. 5-TYPICAL JUNCTION CAPACITANCE
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
400
200
100
TJ=25 C
10
1
20
SK12-SK14
SK15-SK1200
0.1
0.01
0.1
1
10
100
2
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
MDD ELECTRONIC
相关型号：
SK1200-L-TP
Rectifier Diode, Schottky, 1 Element, 1A, 200V V(RRM), Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
MCC
SK1200-LT-TP
Rectifier Diode, Schottky, 1 Element, 1A, 200V V(RRM), Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
MCC
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