SO1E8E8 [MDD]

SURFACE MOUNT SUPER FAST RECTIFIER; 表面装载超快速整流器
SO1E8E8
型号: SO1E8E8
厂家: Chendahang Electronics Co., Ltd    Chendahang Electronics Co., Ltd
描述:

SURFACE MOUNT SUPER FAST RECTIFIER
表面装载超快速整流器

文件: 总2页 (文件大小:125K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SOD1E1 THRU SOD1E8  
SURFACE MOUNT SUPER FAST RECTIFIER  
Reverse Voltage - 50 to 600 Volts Forward Current -1.0 Ampere  
SOD-123FL  
FEATURES  
Cathode Band  
Top View  
Glass passivated device  
Ideal for surface mouted applications  
Low reverse leakage  
Metallurgically bonded construction  
High temperature soldering guaranteed:  
2.8±0.1  
250 C/10 seconds,0.375(9.5mm) lead length,  
5 lbs. (2.3kg) tension  
0.6±0.25  
MECHANICAL DATA  
Case: JEDEC SOD-123FL molded plastic body over passivated chip  
Terminals: Plated axial leads, solderable per MIL-STD-750,  
Method 2026  
3.7±0.2  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
Dimensions in millimeters  
Weight:0.0007 ounce, 0.02 grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 C ambient temperature unless otherwise specified.  
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.  
SYMBOLS  
SOD1E6  
E6  
SOD1E1  
E1  
SOD1E4 SOD1E5  
SO1E8  
E8  
SOD1E2 SOD1E3  
UNITS  
MDD Catalog  
Number  
E2  
100  
70  
E3  
E4  
E5  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
150  
105  
150  
300  
210  
300  
VOLTS  
VOLTS  
VOLTS  
50  
35  
50  
200  
140  
200  
400  
280  
400  
VRRM  
VRMS  
VDC  
600  
420  
600  
100  
Maximum DC blocking voltage  
Maximum average forward rectified current  
I(AV)  
1.0  
Amp  
Peak forward surge current  
IFSM  
VF  
25.0  
8.3ms single half sine-wave superimposed on  
rated load (JEDEC Method)  
Amps  
Volts  
Maximum instantaneous forward voltage at1.0A  
1.7  
1.25  
0.95  
Maximum DC reverse current  
at rated DC blocking voltage  
TA=25 C  
5.0  
100.0  
µ
A
IR  
TA=100 C  
trr  
ns  
Maximum reverse recovery time (NOTE 1)  
Typical junction capacitance (NOTE 2)  
35  
CJ  
pF  
K/W  
C
10  
Typical thermal resistance (NOTE 3)  
Operating junction and storage temperature range  
RθJA  
85  
TJ,TSTG  
-55 to +150  
Note:  
1.Measured with IF=0.5A, IR=1A, Irr=0.25A.  
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.  
3.PCB mounted on 0.2*0.2" (5.0*5.0mm) coppeer pad area.  
MDD ELECTRONIC  
RATINGS AND CHARACTERISTIC CURVES SOD1E1 THRU SOD1E8  
FIG. 1- FORWARD CURRENT DERATING CURVE  
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD  
SURGE CURRENT  
30  
1.0  
0.8  
0.6  
0.4  
0.2  
0
8.3ms SINGLE HALF SINE-WAVE  
(JEDEC Method)  
25  
20  
15  
10  
5.0  
0
Single Phase  
Half Wave 60Hz  
Resistive or  
inductive Load  
0
25  
50  
75  
100  
125  
150  
175  
1
10  
100  
NUMBER OF CYCLES AT 60 Hz  
AMBIENT TEMPERATURE,  
C
FIG. 4-TYPICAL REVERSE CHARACTERISTICS  
FIG. 3-TYPICAL INSTANTANEOUS FORWARD  
CHARACTERISTICS  
1,000  
100  
10  
20  
10  
TJ=25 C  
PULSE WIDTH=300 µs  
1%DUTY CYCLE  
1
TJ=100 C  
1
0.1  
SOD1E1-SOD1E4  
SOD1E5-SOD1E6  
SOD1E8  
0.1  
0.01  
0.01  
TJ=25 C  
0
0.4  
0.8  
1.2  
1.6  
1.8  
0
20  
40  
60  
80  
100  
INSTANTANEOUS FORWARD VOLTAGE,  
VOLTS  
PERCENT OF PEAK REVERSE VOLTAGE,%  
FIG. 5-TYPICAL JUNCTION CAPACITANCE  
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE  
100  
10  
1
0.1  
0.01  
0.1  
1
10  
100  
REVERSE VOLTAGE,VOLTS  
t,PULSE DURATION,sec.  
MDD ELECTRONIC  

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