SODDB3 [MDD]
BIDIRECTIONAL TRIGGER DIODE Reverse Voltage - 32 Volts Power: 150mW; 双向触发二极管的反向电压 - 32伏特功率： 150毫瓦
| 型号： | SODDB3 |
| 厂家： | 
Chendahang Electronics Co., Ltd |
| 描述： | BIDIRECTIONAL TRIGGER DIODE Reverse Voltage - 32 Volts Power: 150mW |
| 文件： | 总2页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SODDB3
BIDIRECTIONAL TRIGGER DIODE
Reverse Voltage - 32 Volts Power: 150mW
SOD-123FL
FEATURES
Cathode Band
Top View
Small glass structure ensures high reliability
VBO:28-36V version
Low breakover current
High temperature soldering guaranteed
250 C/10 seconds,0.375”(9.5mm) lead length,
5 lbs. (2.3kg) tension
2.8±0.1
0.6±0.25
MECHANICAL DATA
Case: JEDEC SOD-123FL molded plastic body
Method 2026
Terminals: Solderable per MIL-STD-750,
Mounting Position: Any
Weight:0.0007 ounce, 0.02gram
Marking :DB3
3.7±0.2
Dimensions in millimeters
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
VALUE
TEST
SYMBOLS
UNITS
CONDITION
Min.
28
-3
Typ.
32
Max.
Breakover voltage *
C=22nF **
C=22nF **
(NOTE 1)
DIAGRAM2
C=22nF **
DIAGRAM3
VR=0.5VBO
TA=65 C
VBO
36
3
VOLTS
VOLTS
VOLTS
VOLTS
µA
Breakover voltage symmetry
Dynamic breakover voltage *
Output voltage *
I+VBOI-I-VBO I
I ∆ V + I
5
VO
IBO
tr
5
Breakover current *
100
Rise time *
1.5
µS
Leakage current *
IB
10
µA
Power dissipation on printed circuit
Pd
150
mW
tp=20µs
A
Repetitive peak on-state current
ITRM
2
f=100Hz
Thermal Resistances from Junction to ambient
Thermal Resistances from Junction to lead
Operating junction and storage temperature range
RΘJA
RΘJL
400
150
125
C/W
C
TJ,TSTG
-40
*
:Electrical characteristic appoicaboe in forward and reverse directions.
** :Connected in parallel with the devices.
Note 1:IBO from IBO to 10mA
MDD ELECTRONIC
RATINGS AND CHARACTERISTIC CURVES SODDB3
FIG. 1-POWER DISSIPATION VERSUS AMBIENT
TEMPERATURE(MAXIMUM VALUES)
DIAGRAM 1:CURRENT-VOLTAGE CHARACTERISTICS
160
140
120
100
80
+ IF
10mA
IBO
60
- V
+ V
IB
40
0.5VBO
∆V
20
0
VBO
0
10
20
30
40
50
60
70
80
90
100
110
120 130
AMBIENT TEMPERATURE, C
FIG. 2-PEAK PULSE CURRENT VERSUS PULSE
DURATION (MAXIMUM VALUES)
- IF
2
1
DIAGRAM 2:TEST CIRCUIT OUTPUT VOLTAGE
0.1
10 KΩ
500 KΩ
D.U.T
220 V
50 Hz
R=20Ω
Vo
0.1µF
0.01
10
100
1000
10000
tp,PULSE DURATION,µs
FIG. 3-RELATIVE VARIATION OF VBO VERSUS JUNCTION
TEMPERATURE(TYPICAL VALUES)
DIAGRAM 3:TEST CIRCUIT SEE DIAGRAM 2.ADJUST R FOR IP=0.5A
1.08
1.06
1.04
1.02
1.00
IP
90%
10%
tr
25
50
75
100
125
Tj( C)
Tj,JUNCTION TEMPERATURE, C
MDD ELECTRONIC
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