SR120 [MDD]

SCHOTTKY BARRIER RECTIFIER Low power loss,high efficiency; 肖特基整流器低功耗，高效率


型号：	SR120
厂家：	Chendahang Electronics Co., Ltd
描述：	SCHOTTKY BARRIER RECTIFIER Low power loss,high efficiency 肖特基整流器低功耗，高效率二极管
文件：	总2页 (文件大小：126K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SR120 THRU SR1200

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 200 Volts Forward Current -

1.0 Ampere

DO-41

FEATURES

The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

Metal silicon junction,majority carrier conduction

Low power loss,high efficiency

High forward surge current capability

High temperature soldering guaranteed:

1.0 (25.4)

MIN.

0.107 (2.7)

0.080 (2.0)

DIA.

250 C/10 seconds,0.375”(9.5mm) lead length,

5 lbs. (2.3kg) tension

0.205 (5.2)

0.160(4.1)

MECHANICAL DATA

1.0 (25.4)

MIN.

Case: JEDEC DO-41 molded plastic body

Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026

0.034 (0.86)

0.028 (0.70)

DIA.

Polarity: Color band denotes cathode end

Mounting Position: Any

Dimensions in inches and (millimeters)

Weight:0.012 ounce, 0.33 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

SR SR

1150 1200

SR SR SR SR SR SR SR SR SR

120 130 140 150 160 170 180 190 1A0

SYMBOLS

UNITS

MDD Catalog

Number

Maximum repetitive peak reverse voltage

Maximum RMS voltage

20 30 40 50 60

14 21 28 35 42

20 30 40 50 60

200 VOLTS

70 80 90 100 150

49 56 63 70 105

70 80 90 100 150

VRRM

VRMS

VDC

VOLTS

140

VOLTS

200

Maximum DC blocking voltage

Maximum average forward rectified current

0.375”(9.5mm) lead length(see fig.1)

Peak forward surge current

I(AV)

1.0

Amp

IFSM

40.0

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Amps

Maximum instantaneous forward voltage at 1.0A

0.95

0.55

110

0.70

0.5

0.85

Volts

Maximum DC reverse current

at rated DC blocking voltage

TA=25 C

0.2

2.0

TA=100 C

10.0

5.0

Typical junction capacitance (NOTE 1)

C/W

Typical thermal resistance (NOTE 2)

Operating junction temperature range

RθJA

50.0

-65 to +125

-65 to +150

TJ,

Storage temperature range

TSTG

-65 to +150

Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted

MDD ELECTRONIC

RATINGS AND CHARACTERISTIC CURVES SR120 THRU SR1200

FIG. 1- FORWARD CURRENT DERATING CURVE

FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD

SURGE CURRENT

0.8

0.6

0.4

0.2

Single Phase

Half Wave 60Hz

Resistive or

inductive Load

SR120-SR160

SR170-SR1200

8.3ms SINGLE HALF SINE-WAVE

(JEDEC Method)

100

125

150

175

100

AMBIENT TEMPERATURE, C

NUMBER OF CYCLES AT 60 Hz

FIG. 3-TYPICAL INSTANTANEOUS FORWARD

CHARACTERISTICS

FIG. 4-TYPICAL REVERSE CHARACTERISTICS

100

TJ=100 C

TJ=75 C

0.1

TJ=25 C

PULSE WIDTH=300 µs

1%DUTY CYCLE

SR120-SR140

SR150-SR160

SR170-SR1150

SR1200

0.1

0.01

TJ=25 C

0.01

0.2

0.4

0.6

0.8

1.0 1.1

0.001

100

INSTANTANEOUS FORWARD VOLTAGE,

VOLTS

PERCENT OF PEAK REVERSE VOLTAGE,%

FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE

FIG. 5-TYPICAL JUNCTION CAPACITANCE

100

2000

1000

SR120-SR140

SR150-SR1200

100

TJ=25 C

0.1

0.01

0.1

100

0.1

1.0

100

REVERSE VOLTAGE,VOLTS

t,PULSE DURATION,sec.

MDD ELECTRONIC

相关型号：

SR120-LF

Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2