SS1045 [MDD]

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER; 表面贴装肖特基整流器


型号：	SS1045
厂家：	Chendahang Electronics Co., Ltd
描述：	SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER 表面贴装肖特基整流器
文件：	总3页 (文件大小：155K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SS102 THRU SS1010

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

10.0 Amperes

Reverse Voltage - 20 to 100 Volts Forward Current -

FEATURES

DO-214AB/SMC

The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

For surface mounted applications

0.245(6.22)

0.220(5.59)

0.126 (3.20)

0.114 (2.90)

Low reverse leakage

Built-in strain relief,ideal for automated placement

High forward surge current capability

High temperature soldering guaranteed:

250 C/10 seconds at terminals

0.280(7.11)

0.260(6.60)

0.012(0.305)

0.006(0.152)

0.103(2.62)

0.079(2.06)

MECHANICAL DATA

Case: JEDEC DO-214AB molded plastic body

Terminals: Solder plated, solderable per MIL-STD-750,

Method 2026

0.060(1.52)

0.030(0.76)

0.008(0.203)MAX.

Polarity: Color band denotes cathode end

Mounting Position: Any

0.320(8.13)

0.305(7.75)

Weight:0.007 ounce, 0.25grams

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

SYMBOLS

SS106 SS108

SS102 SS103 SS1035 SS104 SS1045

SS1010

UNITS

MDD Catalog

Number

Maximum repetitive peak reverse voltage

Maximum RMS voltage

100

VOLTS

VRRM

VRMS

VDC

24.5

31.5

100

Maximum DC blocking voltage

Maximum average forward rectified current

_{at TL}=95 C

I(AV)

10.0

Amps

Peak forward surge current

IFSM

250.0

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Amps

0.65

0.85

Maximum instantaneous forward voltage at 10.0A

Volts

Maximum DC reverse current

at rated DC blocking voltage

TA=25 C

500

TA=100 C

Typical junction capacitance (NOTE 1)

C/W

Typical thermal resistance (NOTE 2)

Operating junction temperature range

RθJA

18.0

-50 to +150

TJ,

Storage temperature range

TSTG

-50 to +150

Note:

1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.P.C.B. mounted with 0.2x0.2

”(5.0x5.0mm) copper pad areas

MDD ELECTRONIC

RATINGS AND CHARACTERISTIC CURVES SS102 THRU SS1010

Figure 1

Typical Forward Characteristics

100

Figure 2

Forward Derating Curve

600

400

200

100

8.0

6.0

4.0

2.0

Amps

SS102-SS1045

SS105-SS1010

Amps

Single Phase, Half Wave

60Hz Resistive or Inductive Load

100

120

140

160

180

°C

25°C

Average Forward Rectified Current - Amperes

versus Lead Temperature - C

Volts

1.0

1.2

1.4

Instantaneous Forward Current - Amperes versus

Instantaneous Forward Voltage - Volts

Figure 3

Junction Capacitance

100

600

400

200

T_J=25°C

100

10 20

200 400

100

1000

Volts

Junction Capacitance - pF versus

Reverse Voltage - Volts

MDD ELECTRONIC

RATINGS AND CHARACTERISTIC CURVES SS102 THRU SS1010

Figure 4

Figure 5

Typical Reverse Characteristics

Peak Forward Surge Current

600

500

400

300

200

100°C

Amps

100

mAmps

60 80 100

8 10 20

Cycles

75°C

mAmps

Peak Forward Surge Current - Amperes versus

Number Of Cycles At 60Hz - Cycles

.06

.04

.02

.01

25°C

SS102-SS1045

SS105-SS1010

.006

.004

.002

.001

Volts

100

120 140

Instantaneous Reverse Leakage Current - MicroAmperes versus

Percent Of Rated Peak Reverse Voltage - Volts

MDD ELECTRONIC

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