SS110F [MDD]

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER;


型号：	SS110F
厂家：	Chendahang Electronics Co., Ltd
描述：	SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
文件：	总2页 (文件大小：629K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SS12F THRU SS1200F

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

1.0 Ampere

Reverse Voltage - 20 to 200 Volts Forward Current -

SMAF

FEATURES

The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

Cathode Band

Top View

For surface mounted applications

Metal silicon junction,majority carrier conduction

Low power loss,high efficiency

0.106(2.70)

0.094(2.40)

0.063(1.60)

0.051(1.30)

Built-in strain relief,ideal for automated placement

High forward surge current capability

High temperature soldering guaranteed:

260 C/10 seconds at terminals

0.146(3.7)

0.130(3.3)

0.0091(0.23)

0.0071(0.18)

0.051(1.30)

0.043(1.10)

0.051(1.30)

0.039(1.0)

MECHANICAL DATA

Case: JEDEC SMAF molded plastic body

Terminals: leads solderable per MIL-STD-750,

Method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any

Weight:0.0018 ounce, 0.064 grams

0.193(4.90)

0.173(4.40)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

SYMBOLS

SS18F SS110F

SS12F SS13F SS14F SS15F SS16F

SS1150F SS1200F

UNITS

MDD Catalog

Number

100

Maximum repetitive peak reverse voltage

Maximum RMS voltage

150

105

150

200

140

200

VOLTS

VRRM

VRMS

VDC

100

Maximum DC blocking voltage

Maximum average forward rectified current

at TL(see fig.1)

I(AV)

1.0

Amp

Peak forward surge current

IFSM

30.0

0.70

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Amps

0.55

0.85

Maximum instantaneous forward voltage at 1.0A

0.95

Volts

Maximum DC reverse current

at rated DC blocking voltage

TA=25 C

0.5

10.0

0.2

2.0

TA=100 C

5.0

Typical junction capacitance (NOTE 1)

110

C/W

Typical thermal resistance (NOTE 2)

Operating junction temperature range

RθJA

88.0

-50 to +150

-50 to +125

-50 to +150

TJ,

Storage temperature range

TSTG

Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas

RATINGS AND CHARACTERISTIC CURVES SS12F THRU SS1200F

FIG. 1- FORWARD CURRENT DERATING CURVE

FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD

SURGE CURRENT

1.0

0.8

0.6

0.4

0.2

Single Phase

Half Wave 60Hz

Resistive or

inductive Load

SS12F-SS16F

8.3ms SINGLE HALF SINE-WAVE

(JEDEC Method)

SS18F-SS1200F

100

125

150

175

100

AMBIENT TEMPERATURE,

NUMBER OF CYCLES AT 60 Hz

FIG. 3-TYPICAL INSTANTANEOUS FORWARD

CHARACTERISTICS

FIG. 4-TYPICAL REVERSE CHARACTERISTICS

100

TJ=25 C

10.0

TJ=100 C

TJ=75 C

0.1

0.01

SS12F-SS14F

SS15F-SS16F

SS18F-SS1150F

SS1200F

0.1

TJ=25 C

0.001

100

PERCENT OF PEAK REVERSE VOLTAGE,%

0.01

0.2 0.4

0.6

0.8 1.0 1.2 1.4 1.6

INSTANTANEOUS FORWARD VOLTAGE,

VOLTS

FIG. 5-TYPICAL JUNCTION CAPACITANCE

FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE

400

200

100

TJ=25 C

SS12F-SS14F

SS15F-SS1200F

0.01

0.1

100

0.1

1.0

100

REVERSE VOLTAGE,VOLTS

t,PULSE DURATION,sec.

The cruve graph is for reference only, can't be the basis for judgment(曲线图仅供参考)!

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