SS2200 [MDD]
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Forward Current -2.0 Amperes; 表面贴装肖特基整流器正向电流-2.0安培
| 型号： | SS2200 |
| 厂家： | 
Chendahang Electronics Co., Ltd |
| 描述： | SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Forward Current -2.0 Amperes |
| 文件： | 总2页 (文件大小：197K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SS2150 THRU SS2200
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 150 to 200 Volts Forward Current - 2.0 Amperes
DO-214AC/SMA
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
0.110(2.80)
0.100(2.54)
Metal silicon junction,majority carrier conduction
Low power loss,high efficiency
0.067 (1.70)
0.051 (1.30)
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375”(9.5mm) lead length,
5 lbs. (2.3kg) tension
0.177(4.50)
0.157(3.99)
0.012(0.305)
0.006(0.152)
MECHANICAL DATA
0.096(2.42)
0.078(1.98)
Case: JEDEC DO-214AC molded plastic body
Terminals: leads solderable per MIL-STD-750,
Method 2026
0.060(1.52)
0.030(0.76)
0.008(0.203)MAX.
Polarity: Color band denotes cathode end
Mounting Position: Any
0.222(5.66)
0.194(4.93)
Weight:0.002 ounce, 0.07 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
SS2150
SS2200
UNITS
MDD Catalog
Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
150
105
150
200
140
200
VOLTS
VOLTS
VOLTS
VRRM
VRMS
VDC
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length(see fig.1)
Peak forward surge current
I(AV)
2.0
Amps
IFSM
50.0
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Amps
VF
IR
Maximum instantaneous forward voltage at 2.0A
0.85
0.95
Volts
mA
Maximum DC reverse current
at rated DC blocking voltage
TA=25 C
0.2
2.0
80
TA=100 C
Typical junction capacitance (NOTE 1)
CJ
pF
C/W
C
Typical thermal resistance (NOTE 2)
Operating junction temperature range
RθJA
88
-65 to +150
TJ
Storage temperature range
C
TSTG
-65 to +150
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
”
2.P.C.B. mounted with 0.2x0.2 (5.0x5.0mm) copper pad areas
MDD ELECTRONIC
RATINGS AND CHARACTERISTIC CURVES SS2150 THRU SS2200
FIG. 1- FORWARD CURRENT DERATING CURVE
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
50
2.0
1.6
1.2
0.8
0.4
0
40
Single Phase
Half Wave 60Hz
Resistive or
30
20
inductive Load
10
0
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
25
50
75
100
125
150
175
1
10
100
AMBIENT TEMPERATURE,
C
NUMBER OF CYCLES AT 60 Hz
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
100
10
20
10
TJ=25 C
PULSE WIDTH=300 µs
1%DUTY CYCLE
TJ=100 C
TJ=75 C
1
0.1
1
SS2150
SS2200
0.1
0.01
TJ=25 C
0.01
0.2
0.4
0.6
0.8
1.0 1.1
0.001
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
FIG. 5-TYPICAL JUNCTION CAPACITANCE
2000
1000
100
10
1
100
TJ=25 C
0.1
0.01
0.1
1
10
100
10
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
MDD ELECTRONIC
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