SS3200 [MDD]
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER; 表面贴装肖特基整流器
| 型号： | SS3200 |
| 厂家： | 
Chendahang Electronics Co., Ltd |
| 描述： | SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
| 文件： | 总2页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SS32 THRU SS3200
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
3.0 Amperes
Reverse Voltage - 20 to 200 Volts Forward Current -
FEATURES
DO-214AB/SMC
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
0.245(6.22)
0.220(5.59)
0.126 (3.20)
0.114 (2.90)
Low reverse leakage
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
0.280(7.11)
0.260(6.60)
0.012(0.305)
0.006(0.152)
0.103(2.62)
0.079(2.06)
MECHANICAL DATA
Case: JEDEC DO-214AB molded plastic body
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
0.060(1.52)
0.030(0.76)
0.008(0.203)MAX.
0.320(8.13)
0.305(7.75)
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight:0.007 ounce, 0.25grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
SS38 SS310 SS3150 SS3200
SS32 SS33 SS34 SS35 SS36
UNITS
MDD Catalog
Number
20
14
20
30
21
30
40
28
40
50
35
50
60
42
60
80
56
80
100 150
200
150
200
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VOLTS
VOLTS
VOLTS
VRRM
VRMS
VDC
70
105
150
100
Maximum DC blocking voltage
Maximum average forward rectified current
at TL(see fig.1)
I(AV)
3.0
Amps
Peak forward surge current
IFSM
100.0
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Amps
VF
IR
0.55
0.70
0.5
Maximum instantaneous forward voltage at 3.0A
0.95
0.85
Volts
mA
Maximum DC reverse current
at rated DC blocking voltage
TA=25 C
0.2
2.0
TA=100 C
20
10
300
Typical junction capacitance (NOTE 1)
CJ
pF
C/W
C
500
Typical thermal resistance (NOTE 2)
Operating junction temperature range
RθJA
55.0
-50 to +150
-50 to +125
-50 to +150
TJ,
Storage temperature range
C
TSTG
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
MDD ELECTRONIC
RATINGS AND CHARACTERISTIC CURVES SS32 THRU SS3200
FIG. 1- FORWARD CURRENT DERATING CURVE
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
100
3.0
2.4
1.8
1.2
0.6
0
80
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
60
40
SS32-SS36
20
0
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
SS38-SS3200
0
25
50
75
100
125
150
175
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
50
100
TJ=25 C
10.0
10
1
TJ=100 C
TJ=75 C
1
0.1
0.01
SS32-SS34
SS35-SS36
SS38-SS3150
SS3200
0.1
TJ=25 C
0.001
0
20
40
60
80
100
PERCENT OF PEAK REVERSE VOLTAGE,%
0.01
0
0.2 0.4
0.6
0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLEAGE,
VOLTS
FIG. 5-TYPICAL JUNCTION CAPACITANCE
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
2000
1000
100
TJ=25 C
10
1
100
SS32-SS34
SS35-SS3200
0.1
0.01
0.1
1
10
100
10
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
MDD ELECTRONIC
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