SS52C [MDD]
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER; 表面贴装肖特基整流器
| 型号： | SS52C |
| 厂家： | 
Chendahang Electronics Co., Ltd |
| 描述： | SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
| 文件： | 总2页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SS52 THRU SS5200
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
5.0 Amperes
Reverse Voltage - 20 to 200 Volts Forward Current -
FEATURES
DO-214AB/SMC
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
0.245(6.22)
0.220(5.59)
0.126 (3.20)
0.114 (2.90)
Low reverse leakage
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
0.280(7.11)
0.260(6.60)
0.012(0.305)
0.006(0.152)
0.103(2.62)
0.079(2.06)
MECHANICAL DATA
Case: JEDEC DO-214AB molded plastic body
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
0.060(1.52)
0.030(0.76)
0.008(0.203)MAX.
Polarity: Color band denotes cathode end
Mounting Position: Any
0.320(8.13)
0.305(7.75)
Weight:0.007 ounce, 0.25grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
SS58 SS510
SS52 SS53 SS54 SS55 SS56
SS5150 SS5200
UNITS
MDD Catalog
Number
20
14
20
30
21
30
40
28
40
50
35
50
60
42
60
80
56
80
100
70
Maximum repetitive peak reverse voltage
Maximum RMS voltage
150
105
150
200
150
200
VOLTS
VOLTS
VOLTS
VRRM
VRMS
VDC
100
Maximum DC blocking voltage
Maximum average forward rectified current
at TL(see fig.1)
I(AV)
5.0
Amps
Peak forward surge current
IFSM
150.0
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Amps
VF
IR
0.55
0.70
0.5
0.85
Maximum instantaneous forward voltage at 5.0A
0.95
Volts
mA
Maximum DC reverse current
at rated DC blocking voltage
TA=25 C
0.2
2.0
TA=100 C
20
10
200
Typical junction capacitance (NOTE 1)
CJ
pF
C/W
C
Typical thermal resistance (NOTE 2)
Operating junction temperature range
RθJA
50.0
-50 to +125
-50 to +150
TJ,
Storage temperature range
C
TSTG
-50 to +150
Note:
1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.P.C.B. mounted with 0.2x0.2
”(5.0x5.0mm) copper pad areas
MDD ELECTRONIC
RATINGS AND CHARACTERISTIC CURVES SS52 THRU SS5200
FIG. 1- FORWARD CURRENT DERATING CURVE
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
150
120
90
5.0
4.0
3.0
2.0
1.0
0
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
60
SS52-SS56
30
0
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
SS58-SS5200
0
25
50
75
100
125
150
175
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
50
100
TJ=25 C
10.0
10
1
TJ=100 C
TJ=75 C
1
0.1
0.01
SS52-SS54
SS55-SS56
SS58-SS5150
SS5200
0.1
TJ=25 C
0.001
0
20
40
60
80
100
PERCENT OF PEAK REVERSE VOLTAGE,%
0.01
0
0.2 0.4
0.6
0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLEAGE,
VOLTS
FIG. 5-TYPICAL JUNCTION CAPACITANCE
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
2000
1000
100
TJ=25 C
10
1
100
0.1
0.01
0.1
1
10
100
10
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
MDD ELECTRONIC
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