SS52_1 [MDD]

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Low reverse leakage; 表面贴装肖特基整流器低反向漏


型号：	SS52_1
厂家：	Chendahang Electronics Co., Ltd
描述：	SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Low reverse leakage 表面贴装肖特基整流器低反向漏
文件：	总2页 (文件大小：88K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SS52 THRU SS5200

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

5.0 Amperes

Reverse Voltage - 20 to 200 Volts Forward Current -

FEATURES

DO-214AC/SMA

The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

0.110(2.80)

0.100(2.54)

0.067 (1.70)

0.051 (1.30)

For surface mounted applications

Low reverse leakage

Built-in strain relief,ideal for automated placement

High forward surge current capability

High temperature soldering guaranteed:

250 C/10 seconds at terminals

0.177(4.50)

0.157(3.99)

0.012(0.305)

0.006(0.152)

0.096(2.42)

0.078(1.98)

MECHANICAL DATA

0.060(1.52)

0.030(0.76)

0.008(0.203)MAX.

Case: JEDEC DO-214AC molded plastic body

Terminals: leads solderable per MIL-STD-750,

Method 2026

0.208(5.28)

0.188(4.80)

Polarity: Color band denotes cathode end

Mounting Position: Any

Dimensions in inches and (millimeters)

Weight:0.002 ounce, 0.07 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

SYMBOLS

SS58 SS510

SS52 SS53 SS54 SS55 SS56

SS5150 SS5200

UNITS

MDD Catalog

Number

100

Maximum repetitive peak reverse voltage

Maximum RMS voltage

150

105

150

200

150

200

VOLTS

VRRM

VRMS

VDC

100

Maximum DC blocking voltage

Maximum average forward rectified current

at TL(see fig.1)

I(AV)

5.0

Amps

Peak forward surge current

IFSM

125.0

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Amps

0.55

0.70

0.5

0.85

Maximum instantaneous forward voltage at 5.0A

0.95

Volts

Maximum DC reverse current

at rated DC blocking voltage

TA=25 C

0.2

2.0

TA=100 C

200

Typical junction capacitance (NOTE 1)

C/W

Typical thermal resistance (NOTE 2)

Operating junction temperature range

RθJA

50.0

-50 to +125

-50 to +150

TJ,

Storage temperature range

TSTG

-50 to +150

Note:

1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.P.C.B. mounted with 0.2x0.2

”(5.0x5.0mm) copper pad areas

MDD ELECTRONIC

RATINGS AND CHARACTERISTIC CURVES SS52 THRU SS5200

FIG. 1- FORWARD CURRENT DERATING CURVE

FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD

SURGE CURRENT

150

120

5.0

4.0

3.0

2.0

1.0

Single Phase

Half Wave 60Hz

Resistive or

inductive Load

SS52-SS56

8.3ms SINGLE HALF SINE-WAVE

(JEDEC Method)

SS58-SS5200

100

125

150

175

100

AMBIENT TEMPERATURE,

NUMBER OF CYCLES AT 60 Hz

FIG. 3-TYPICAL INSTANTANEOUS FORWARD

CHARACTERISTICS

FIG. 4-TYPICAL REVERSE CHARACTERISTICS

100

TJ=25 C

10.0

TJ=100 C

TJ=75 C

0.1

0.01

SS52-SS54

SS55-SS56

SS58-SS5150

SS5200

0.1

TJ=25 C

0.001

100

PERCENT OF PEAK REVERSE VOLTAGE,%

0.01

0.2 0.4

0.6

0.8 1.0 1.2 1.4 1.6

INSTANTANEOUS FORWARD VOLEAGE,

VOLTS

FIG. 5-TYPICAL JUNCTION CAPACITANCE

FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE

2000

1000

100

TJ=25 C

100

0.1

0.01

0.1

100

0.1

1.0

100

REVERSE VOLTAGE,VOLTS

t,PULSE DURATION,sec.

MDD ELECTRONIC

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