U3KB [MDD]
SURFACE MOUNT ULTRAFAST RECOVERY RECTIFIER;
| 型号： | U3KB |
| 厂家： | 
Chendahang Electronics Co., Ltd |
| 描述： | SURFACE MOUNT ULTRAFAST RECOVERY RECTIFIER 快速恢复二极管 |
| 文件： | 总2页 (文件大小：584K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
US3ABF THRU US3MBF
SURFACE MOUNT ULTRAFAST RECOVERY RECTIFIER
Reverse Voltage - 50 to 1000 Volts Forward Current -
3.0 Amperes
SMBF
FEATURES
Cathode Band
Top View
For surface mounted applications
Low profile package
0.146(3.70)
0.138(3.50)
0.086(2.20)
0.075(1.90)
Glass Passivated Chip Junction
Easy to pick and place
Superfast reverse recovery time
0.173(4.4)
Lead free in comply with EU RoHS 2011/65/EU diretives
0.165(4.2)
0.010(0.26)
0.0071(0.18)
0.051(1.30)
0.043(1.10)
0.051(1.30)
0.039(1.0)
MECHANICAL DATA
Case: JEDEC SMBF molded plastic body
Terminals: leads solderable per MIL-STD-750,
Method 2026
Mounting Position: Any
Weight:57mg/0.002oz
0.216(5.5)
0.200(5.1)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
US3ABF US3BBF US3DBF US3GBF US3JBF US3KBF US3MBF
UNITS
MDD Catalog
Number
U3AB
U3BB
U3DB
U3GB
U3JB
U3KB
U3MB
Marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
VOLTS
VOLTS
VOLTS
VRMS
VDC
100
1000
Maximum DC blocking voltage
Maximum average forward rectified current
at TL=65 C
I(AV)
3.0
Amps
Peak forward surge current
IFSM
100.0
1.3
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Amps
Volts
VF
IR
1.0
1.6
Maximum instantaneous forward voltage at 3.0A
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time
TA=25 C
TA=125 C
(NOTE 1)
5.0
100.0
µ
A
ns
trr
50
75
Typical junction capacitance (NOTE 2)
CJ
pF
75
RθJA
RθJL
55
16
Typical thermal resistance (NOTE 3)
C/W
C
Operating junction and storage temperature range
TJ,TSTG
-55 to +150
Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.5x0.5”(12.5x12.7mm) copper pad areas
RATINGS AND CHARACTERISTIC CURVES US3ABF THRU US3MBF
Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram
50 ohm
Noninductive
10 ohm
Noninductive
trr
+0.5
D.U.T
+
PULSE
GENERATOR
Note 2
25Vdc
approx
0
-
-0.25
1 ohm
NonInductive
OSCILLOSCOPE
Note 1
-1.0
Note：1.Rise Time = 7ns, max.
Input Impedance = 1megohm,22pF.
10ns/div
2. Ries Time =10ns, max.
Source Impedance = 50 ohms.
Set time Base for 10ns/div
Fig.3 Typical Reverse Characteristics
Fig.2 Maximum Average Forward Current Rating
3.5
300
100LFM
100
3.0
TJ=125°C
Lead
2.4
Ambient
1.8
10
TJ=75°C
TJ=25°C
1.2
1.0
0.1
Single phase half wave resistive
or inductive P.C.B mounted on
0.5×0.5"(12.7×12.7mm) pad areas.
0.6
0.0
25
50
75
100
125
150
175
0
20
40
60
80
100
Ambient /Lead Temperature (°C)
% of PIV.VOLTS
Fig.3 Typical Instaneous Forward
Characteristics
Fig.4 Maximum Non-Repetitive Peak
Forward Surage Current
20
10
120
100
80
TJ=25°C
pulse with 300μs
1% duty cycle
1.0
60
40
0.1
US3ABF~US3DBF
US3GBF
8.3 ms Single Half Sine Wave
(JEDEC Method)
20
US3JBF~US3MBF
0.01
00
1
10
100
0.5
1.0
1.5
2.0
2.5
0.0
Instaneous Forward Voltage (V)
Number of Cycles
The cruve graph is for reference only, can't be the basis for judgment(曲线图仅供参考)!
相关型号：
©2020 ICPDF网 联系我们和版权申明