UG2KB60G [MDD]

SILICON BRIDGE RECTIFIERS;


型号：	UG2KB60G
厂家：	Chendahang Electronics Co., Ltd
描述：	SILICON BRIDGE RECTIFIERS
文件：	总2页 (文件大小：1154K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UG2KB05G THRU UG2KB100G

SILICON BRIDGE RECTIFIERS

Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes

D3K

FEATURES

Glass passivated die construction

Low forward voltage drop

High current capability

High surge current capability

Designed for surface mount application

Plastic material-UL flammability 94V-O

MECHANICAL DATA

Case: D3K molded plastic body

Terminals: Plated leads solderable per

MIL-STD-202, Method 208

Polarity: As marked on case

Mounting Position: Any

Marking : Type number

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

UG2K

B05G

UG2K UG2K UG2K

B10G B20G B40G B60G B80G B100G

UG2K UG2K UG2K

SYMBOLS

UNITS

MDD Catalog

Number

Maximum repetitive peak reverse voltage

Maximum RMS voltage

VRRM

VRMS

VDC

VOLTS

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Maximum DC blocking voltage

Maximum average forward output rectified current

at TA=40 C(Note 1)

100

1000

2.0

I(AV)

Amps

Peak forward surge current

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

60.0

Amps

IFSM

Forward voltage per element

@IF=2.0A

Volts

1.1

Maximum DC reverse current

at rated DC blocking voltage

TA=25 C

5.0

0.5

TA=125 C

Typical juntion capacitance per leg

RθJA

Typical Thermal Resistance per leg(Note 2)

Operating junction temperature range

C/W

RθJL

TJ,

TSTG

-55 to +150

Note:1. Mounted on glass epoxy PC board with 1.3mm²solder pad.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C..

RATINGS AND CHARACTERISTIC CURVES UG2KB05G THRU UG2KB100G

Fig. 1 Output Current Derating Curve

Fig. 2 Typical l Forward Characteristics (per leg)

2.0

1.6

1.0

1.2

0.8

0.1

0.4

T_A= 25°C

Pulse Width = 300µs

Resistive or Inductive Load

0.01

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

120

160

T_A, AMBIENT TEMPERATURE (°C)

V_F, INSTANTANEOUS FORWARD VOLTAGE (V)

Fig.4 Typical Junction Capacitance Per Diode

Fig. 3 Maximum Peak Forward Surge Current (per leg)

100

T_J= 25°C

f = 1.0MHz

T_A= 25°C

Single Half Sine-Wave

Pulse Width = 8.3ms

(JEDEC Method)

NUMBER OF CYCLES AT 60 Hz

100

1.0

REVERSE VOLTAGE (V)

The cruve graph is for reference only, can't be the basis for judgment(曲线图仅供参考)!

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