W005 [MDD]
SILICON BRIDGE RECTIFIERS Reverse Voltage - 50 to 100 0 Volts; 硅桥式整流器反向电压 - 50到100伏特0
| 型号： | W005 |
| 厂家： | 
Chendahang Electronics Co., Ltd |
| 描述： | SILICON BRIDGE RECTIFIERS Reverse Voltage - 50 to 100 0 Volts |
| 文件： | 总2页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
W005 THRU W10
SILICON BRIDGE RECTIFIERS
Reverse Voltage - 50 to 1000 Volts Forward Current - 1.5 Amperes
WOM
FEATURES
0.366(9.3)
0.350(8.9)
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Ideal for printed circuit boards
0.237(6.0)
0.197(5.0)
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
1.1
1.0
260 C/10 seconds,0.375”(9.5mm) lead length,
5 lbs. (2.3kg) tension
(27.9)
MIN.
(25.4)
MIN.
0.032(0.8)
0.028(0.7)
MECHANICAL DATA
DIA.
POS.LEAD
Case: Molded plastic body
Terminals: Plated leads solderable per MIL-STD-750,
Method 2026
0.220(5.6)
0.180(4.6)
Polarity: Polarity symbols marked on case
Mounting Position: Any
0.220(5.6)
0.180(4.6)
Weight:0.042 ounce, 1.2 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load, for capacitive load current derate by 20%.
SYMBOLS
W005
W01
W02
W04
W06
W08 W10 UNITS
Number
MDD Catalog
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
VOLTS
VOLTS
VOLTS
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
Maximum DC blocking voltage
Maximum average forward output rectified current
at TA=25 C (Note 2)
100
1000
I(AV)
1.5
Amps
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Amps
50.0
IFSM
A2s
I2t
Rating for Fusing(t<8.3ms)
10
Maximum instantaneous forward voltage drop
per birdge element at 1.0A
Volts
VF
1.0
Maximum DC reverse current
at rated DC blocking voltage
TA=25 C
10
0.5
µ
A
IR
TA=100 C
mA
pF
C/W
C
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance
Operating junction temperature range
storage temperature range
NOTES:
CJ
RθJA
TJ
15
40
-55 to +125
-55 to +150
TSTG
C
1.Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.
2.Unit mounted on P.C. board with 0.22” x 0.22” (5.5x5.5mm) copper pads,0.375” (9.5mm) lead length.
MDD ELECTRONIC
RATINGS AND CHARACTERISTIC CURVES W005 THRU W10
FIG. 1- FORWARD CURRENT DERATING CURVE
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
50
40
30
20
1.5
1.2
0.9
0.6
0.3
0
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
10
0
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
25
50
75
100
125
150
175
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
1,000
100
10
20
10
1
0.1
TJ=100 C
TJ=25 C
PULSE WIDTH=300 µs
1%DUTY CYCLE
1
TJ=25 C
0.1
0.01
0.01
0.6
0.8
1.0
1.2
1.4
1.5
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 5-TYPICAL JUNCTION CAPACITANCE
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
200
100
100
10
1
TJ=25 C
10
0.1
0.01
0.1
1
10
100
1
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
MDD ELECTRONIC
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