W05 [MDD]

SILICON BRIDGE RECTIFIERS;
W05
型号: W05
厂家: Chendahang Electronics Co., Ltd    Chendahang Electronics Co., Ltd
描述:

SILICON BRIDGE RECTIFIERS

文件: 总2页 (文件大小:535K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
W005 THRU W10  
SILICON BRIDGE RECTIFIERS  
Reverse Voltage - 50 to 1000 Volts Forward Current - 1.5 Amperes  
WOM  
FEATURES  
0.366(9.3)  
0.350(8.9)  
The plastic package carries Underwriters Laboratory  
Flammability Classification 94V-0  
Ideal for printed circuit boards  
0.237(6.0)  
0.197(5.0)  
Low reverse leakage  
High forward surge current capability  
High temperature soldering guaranteed:  
1.1  
1.0  
260 C/10 seconds,0.375(9.5mm) lead length,  
5 lbs. (2.3kg) tension  
(27.9)  
MIN.  
(25.4)  
MIN.  
0.032(0.8)  
0.028(0.7)  
MECHANICAL DATA  
DIA.  
POS.LEAD  
Case: Molded plastic body  
Terminals: Plated leads solderable per MIL-STD-750,  
Method 2026  
0.220(5.6)  
0.180(4.6)  
Polarity: Polarity symbols marked on case  
Mounting Position: Any  
0.220(5.6)  
0.180(4.6)  
Weight:0.042 ounce, 1.2 grams  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 C ambient temperature unless otherwise specified.  
Single phase half-wave 60Hz,resistive or inductive load, for capacitive load current derate by 20%.  
SYMBOLS  
W005  
W01  
W02  
W04  
W06  
W08 W10 UNITS  
Number  
MDD Catalog  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
VOLTS  
VOLTS  
VOLTS  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
Maximum DC blocking voltage  
Maximum average forward output rectified current  
at TC=25 C (Note 2)  
100  
1000  
I(AV)  
1.5  
Amps  
Peak forward surge current  
8.3ms single half sine-wave superimposed on  
rated load (JEDEC Method)  
Amps  
50.0  
IFSM  
A2s  
I2t  
Rating for Fusing(t<8.3ms)  
10  
Maximum instantaneous forward voltage drop  
per birdge element at 1.0A  
Volts  
VF  
1.0  
Maximum DC reverse current  
at rated DC blocking voltage  
TA=25 C  
10  
0.5  
µ
A
IR  
TA=100 C  
mA  
pF  
C/W  
C
Typical Junction Capacitance (Note 1)  
Typical Thermal Resistance  
Operating junction temperature range  
storage temperature range  
NOTES:  
CJ  
RθJA  
TJ  
15  
40  
-55 to +125  
-55 to +150  
TSTG  
C
1.Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.  
2.Unit mounted on P.C. board with 0.22x 0.22(5.5x5.5mm) copper pads,0.375(9.5mm) lead length.  
RATINGS AND CHARACTERISTIC CURVES W005 THRU W10  
FIG. 1- FORWARD CURRENT DERATING CURVE  
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD  
SURGE CURRENT  
50  
40  
30  
20  
1.5  
1.2  
0.9  
0.6  
0.3  
0
Single Phase  
Half Wave 60Hz  
Resistive or  
inductive Load  
10  
0
8.3ms SINGLE HALF SINE-WAVE  
(JEDEC Method)  
0
25  
50  
75  
100  
125  
150  
175  
1
10  
100  
AMBIENT TEMPERATURE,  
C
NUMBER OF CYCLES AT 60 Hz  
FIG. 3-TYPICAL INSTANTANEOUS FORWARD  
CHARACTERISTICS  
FIG. 4-TYPICAL REVERSE CHARACTERISTICS  
1,000  
100  
10  
20  
10  
1
0.1  
TJ=100 C  
TJ=25 C  
PULSE WIDTH=300 µs  
1%DUTY CYCLE  
1
TJ=25 C  
0.1  
0.01  
0.01  
0.6  
0.8  
1.0  
1.2  
1.4  
1.5  
0
20  
40  
60  
80  
100  
INSTANTANEOUS FORWARD VOLTAGE,  
VOLTS  
PERCENT OF PEAK REVERSE VOLTAGE,%  
FIG. 5-TYPICAL JUNCTION CAPACITANCE  
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE  
200  
100  
100  
10  
1
TJ=25 C  
10  
0.1  
0.01  
0.1  
1
10  
100  
1
0.1  
1.0  
10  
100  
REVERSE VOLTAGE,VOLTS  
t,PULSE DURATION,sec.  
The cruve graph is for reference only, can't be the basis for judgment(曲线图仅供参考)!  

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