MLX92221LSE-AAA-001 [MELEXIS]

2-Wire Hall Effect Latch;
MLX92221LSE-AAA-001
型号: MLX92221LSE-AAA-001
厂家: Melexis Microelectronic Systems    Melexis Microelectronic Systems
描述:

2-Wire Hall Effect Latch

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中文:  中文翻译
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MLX92221-AAA  
2-Wire Hall Effect Latch  
Features and Benefits  
Application Examples  
Wide operating voltage range: from 2.7V to 24V  
Integrated self-diagnostics  
Automotive, Consumer and Industrial  
Wiper motor  
Chopper-stabilized amplifier stage  
Programmable Built-in negative temperature coefficient  
Reverse Supply Voltage Protection  
Under-Voltage Lockout Protection  
Thermal Protection  
Window lifter  
Seatbelt buckle  
Seat positioning  
Sunroof/Tailgate opener  
Electrical power steering  
High ESD rating / Excellent EMC performance  
Ordering Information  
Part No.  
Temperature Code  
Package Code  
Comment  
BU (Bulk)  
RE (Reel)  
MLX92221LUA-AAA-xxx-BU  
MLX92221LSE-AAA-xxx-RE  
L (-40°C to 150°C)  
L (-40°C to 150°C)  
UA (TO92-3L)  
SE (TSOT-23)  
The included voltage regulator operates from 2.7 to  
24V, hence covering a wide range of applications. With  
the built-in reverse voltage protection, a serial resistor  
or diode on the supply line is not required so that even  
remote sensors can be specified for low voltage  
operation down to 2.7V while being reverse voltage  
tolerant.  
1 Functional Diagram  
VDD  
Voltage Regulator  
with Reverse Polarity  
Protection  
Under-  
Voltage  
Lockout  
TEST  
Temperature  
Compensation  
Bop/Brp  
reference  
Thermal  
Protection  
In an event of a drop below the minimum supply  
voltage during operation, the under-voltage lock-out  
protection will automatically freeze the device,  
preventing the electrical perturbation to affect the  
magnetic measurement circuitry. The output current  
state is therefore only updated based on a proper and  
accurate magnetic measurement result.  
Switched  
Hall  
Plate  
Output  
Current Sink  
CDS  
Amplifier  
Trimming  
Register  
Control  
GND  
The two-wire interface not only saves one wire, but also  
allows implementation of diagnostic functions as  
reverse polarity connection and malfunction detection.  
The on-chip thermal protection also switches off the  
output if the junction temperature increases above an  
abnormally high threshold. It will automatically recover  
once the temperature decreases below a safe value.  
2 General Description  
The Melexis MLX92241 is a new generation of Hall-  
effect switches designed in mixed signal submicron  
CMOS technology.  
With latching magnetic characteristics the supply  
current state is turned high by a sufficiently strong  
South Pole facing the package branded side. Toggling  
the state of the supply current from high to low is  
possible by applying low or no magnetic field.  
The device integrates a voltage regulator, Hall sensor  
with advanced offset cancellation system and a current  
sink-configured output driver, all in a single package.  
Based on a brand new platform, the magnetic core is  
using an improved offset cancellation system allowing  
faster and more accurate processing while being  
temperature insensitive and stress independent. In  
addition a temperature coefficient is implemented to  
compensate the natural behaviour of certain types of  
magnets becoming weaker with rise in temperature.  
The MLX92221 is delivered in a Green and RoHS  
compliant Plastic Single-in-Line (TO-92 flat) for  
through-hole mount or PCB-less design or in 3-pin Thin  
Small Outline Transistor (TSOT) for surface mount  
process  
390109224100 Rev. 1  
Page 1 of 14  
June/13  
 
 
MLX92221-AAA  
2-Wire Hall Effect Latch  
Table of Contents  
1 Functional Diagram ....................................................................................................................1  
2 General Description....................................................................................................................1  
3 Absolute Maximum Ratings.......................................................................................................3  
4 General Electrical Specifications ..............................................................................................4  
5 Specifications .............................................................................................................................5  
5.1 MLX92221LSE-AAA-001 ........................................................................................................................................... 5  
5.2 MLX92221LSE-AAA-002 ........................................................................................................................................... 5  
5.3 MLX92221LSE-AAA-003 ........................................................................................................................................... 5  
5.4 MLX92221LUA-AAA-004........................................................................................................................................... 5  
5.5 MLX92221LUA-AAA-005........................................................................................................................................... 6  
5.6 MLX92221LUA-AAA-006........................................................................................................................................... 6  
6 Magnetic Behaviour....................................................................................................................7  
6.1 Latch sensor .............................................................................................................................................................. 7  
7 Performance Graphs ..................................................................................................................8  
7.1 IOFFLow vs. TJ............................................................................................................................................................... 8  
7.2 IOFFHigh vs. TJ.............................................................................................................................................................. 8  
7.5 ION vs. TJ .................................................................................................................................................................... 8  
7.4 IOFFLow vs. VDD ............................................................................................................................................................ 8  
7.5 IOFFHigh vs. VDD............................................................................................................................................................ 8  
7.6 ION vs. VDD.................................................................................................................................................................. 8  
7.7 VDD de-rating UA package ......................................................................................................................................... 9  
7.8 VDD de-rating TSOT package..................................................................................................................................... 9  
8 Application Information............................................................................................................ 10  
8.1 Typical Automotive Application Circuit..................................................................................................................... 10  
8.2 Automotive and Harsh, Noisy Environments Application Circuit .............................................................................. 10  
8.3 Strobing VDD application (used for reduced self-heating)......................................................................................... 10  
9 Standard information regarding manufacturability of Melexis products with different soldering  
processes..................................................................................................................................... 11  
10 ESD Precautions..................................................................................................................... 11  
11 Package Information............................................................................................................... 12  
11.1 UA (TO92 - 3L) ..................................................................................................................................................... 12  
11.2 SE (TSOT-3L) Package Information ...................................................................................................................... 13  
12 Disclaimer ............................................................................................................................... 14  
390109224100 Rev. 1  
Page 2 of 14  
June/13  
MLX92221-AAA  
2-Wire Hall Effect Latch  
3 Absolute Maximum Ratings  
Parameter  
Supply Voltage (1, 2)  
Supply Current (1, 2, 3)  
Supply Current (1, 3, 4)  
Symbol  
Value  
+27V  
+20  
Units  
V
VDD  
IDD  
IDD  
VDDREV  
IDDREV  
IDDREV  
TJ  
mA  
mA  
V
+50  
Reverse Supply Voltage (1, 2)  
Reverse Supply Current (1, 2, 5)  
Reverse Supply Current (1, 4, 5)  
Maximum Junction Temperature (6)  
Operating Temperature Range  
Storage Temperature Range  
ESD Sensitivity HBM (7)  
ESD Sensitivity MM (8)  
ESD Sensitivity CDM (9)  
Magnetic Flux Density  
-24  
-20  
mA  
mA  
C  
-50  
+165  
TA  
-40 to 150  
-55 +165  
3000  
C  
TS  
C  
-
V
-
400  
V
-
1000  
V
B
Unlimited  
mT  
Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute-maximum-rated  
conditions for extended periods may affect device reliability.  
1 The maximum junction temperature should not be exceeded  
2 For maximum 1 hour  
3 Including current through protection device  
4 For maximum 1000 ms  
5 Through protection device  
6 For 1000 hours.  
7 Human Model according AEC-Q100-002 standard  
8 Machine Model according AEC-Q100-003 standard  
9 Charged Device Model according AEC-Q100-011 standard  
390109224100 Rev. 1  
Page 3 of 14  
June/13  
 
 
 
 
MLX92221-AAA  
2-Wire Hall Effect Latch  
4 General Electrical Specifications  
DC Operating Parameters VDD = 2.7 to 24V, TJ = -40°C to 165°C (unless otherwise specified)  
Parameter  
Symbol Test Conditions  
Min  
Typ(1)  
Max  
24  
Units  
V
Supply Voltage  
VDD  
Operating  
2.7  
-
Reverse Supply Current  
IDDREV  
VDD = -16V  
1
mA  
OFF Supply Current  
IOFFLow  
VDD = 3.5 to 24V  
2
3.3  
5
mA  
OFF Supply Current  
IOFFHigh  
ION  
VDD = 3.5 to 24V  
5
12  
-
6
14.5  
-
6.9  
17  
0.8  
1
mA  
mA  
mA  
μs  
ON Supply Current  
VDD = 3.5 to 24V  
Safe Mode Supply Current  
Supply Current Rise/Fall Time (2)  
Power-On Time (3,4,5)  
ITP  
Thermal Protection activated  
tRISE/FALL VDD = 12V, CLOAD = 50pF to GND  
0.1  
-
0.3  
40  
tON  
VDD = 5V, dVDD/dt > 2V/us  
70  
-
μs  
Chopping Frequency  
fCHOP  
260  
340  
kHz  
Average value for 1000 successive  
switching events @10kHz, Square wave  
with B 3*BOPMAX, tRISE = tFALL ≤20us  
Square wave with B ≥ 3*BOPMAX over  
1000 successive switching events  
@1kHz  
Delay time (2,6)  
tD  
-
-
7.5  
-
-
µs  
µs  
Output Jitter (p-p) (2,7)  
tJITTER  
±3.3  
B ≥ 3*BOPMAX and square wave  
magnetic field  
Maximum Switching Frequency (2,8) fSW  
30  
-
50  
2
-
2.7  
-
kHz  
V
Under-voltage Lockout Threshold  
VUVL  
Under-voltage Lockout Reaction  
time (2)  
tUVL  
-
1
µs  
Thermal Protection Threshold  
Thermal Protection Release  
Safe Mode Supply Current  
TPROT  
TREL  
ITP  
Junction temperature  
-
-
-
190 (9)  
180 (9)  
-
-
-
°C  
°C  
Junction temperature  
Thermal Protection activated  
0.8  
mA  
Single layer (1S) Jedec board, zero  
LFPM  
Single layer (1S) Jedec board, zero  
LFPM  
UA Package Thermal Resistance  
RTH  
200  
300  
°C/W  
°C/W  
TSOT Package Thermal Resistance RTH  
1 Typical values are defined at TA = +25°C and VDD = 12V  
2 Guaranteed by design and verified by characterization, not production tested  
3 The Power-On Time represents the time from reaching VDD = VPOR to the first refresh of the supply current state.  
4 Power-On Slew Rate is not critical for the proper device start-up.  
5 B>BOPmax + 1 mT for direct output sensors, or B<BRPmin - 1 mT.  
6 Delay Time is the time from magnetic threshold reached to the start of the supply current switching.  
7 Output jitter is the unpredictable deviation of the Delay time  
8 Maximum switching frequency corresponds to the maximum frequency of the applied magnetic field which is detected without loss of pulses  
9 TPROT and TREL are the corresponding junction temperature values.  
390109224100 Rev. 1  
Page 4 of 14  
June/13  
MLX92221-AAA  
2-Wire Hall Effect Latch  
5 Specifications  
5.1 MLX92221LSE-AAA-001  
DC Operating Parameters VDD = 3.5V to 24V, TJ = -40°C to 165°C  
Test  
Condition  
Operating Point  
BOP (mT)  
Release Point  
BRP (mT)  
TC  
Ioff  
(mA)  
Active Pole  
(ppm/oC)  
Typ(10)  
Typ(10)  
Typ(10)  
Typ(10)  
Min  
7.4  
7.4  
7.4  
Max  
Min  
-7.4  
-7.4  
-7.4  
Max  
TJ = -40°C  
TJ = 25°C  
TJ = 150°C  
11.8  
11.8  
11.8  
16.3  
16.3  
16.3  
-11.8  
-11.8  
-11.8  
-16.3  
-16.3  
-16.3  
0
6
South pole  
5.2 MLX92221LSE-AAA-002  
DC Operating Parameters VDD = 3.5V to 24V, TJ = -40°C to 165°C  
Test  
Condition  
Operating Point  
BOP (mT)  
Release Point  
BRP (mT)  
TC  
Ioff  
(mA)  
Active Pole  
(ppm/oC)  
Typ(10)  
Typ(10)  
-6.8  
- 6  
Typ(10)  
Typ(10)  
Min  
4.1  
4.1  
1.8  
Max  
Min  
-9.6  
-7.9  
-7.1  
Max  
-4.1  
-4.1  
-1.8  
TJ = -40°C  
TJ = 25°C  
TJ = 150°C  
6.8  
6
9.6  
7.9  
7.1  
-2000  
6
South pole  
4.5  
-4.5  
5.3 MLX92221LSE-AAA-003  
DC Operating Parameters VDD = 3.5V to 24V, TJ = -40°C to 165°C  
Test  
Condition  
Operating Point  
BOP (mT)  
Release Point  
BRP (mT)  
TC  
Ioff  
(mA)  
Active Pole  
(ppm/oC)  
Typ(10)  
Typ(10)  
Typ(10)  
Typ(10)  
Min  
0.5  
0.8  
0.3  
Max  
Min  
-3.2  
-2.8  
-3.3  
Max  
-0.5  
-0.8  
-0.3  
TJ = -40°C  
TJ = 25°C  
TJ = 150°C  
2
3.2  
2.8  
3.3  
-2  
1.8  
1.8  
-1.8  
-1.8  
0
6
South pole  
5.4 MLX92221LUA-AAA-004  
DC Operating Parameters VDD = 3.5V to 24V, TJ = -40°C to 165°C  
Test  
Condition  
Operating Point  
BOP (mT)  
Release Point  
BRP (mT)  
TC  
Ioff  
(mA)  
Active Pole  
(ppm/oC)  
Typ(10)  
Typ(10)  
-6.8  
- 6  
Typ(10)  
Typ(10)  
Min  
4.1  
4.1  
1.8  
Max  
Min  
-9.6  
-7.9  
-7.1  
Max  
-4.1  
-4.1  
-1.8  
TJ = -40°C  
TJ = 25°C  
TJ = 150°C  
6.8  
6
9.6  
7.9  
7.1  
-1100  
6
South pole  
4.5  
-4.5  
390109224100 Rev. 1  
Page 5 of 14  
June/13  
MLX92221-AAA  
2-Wire Hall Effect Latch  
5.5 MLX92221LUA-AAA-005  
DC Operating Parameters VDD = 3.5V to 24V, TJ = -40°C to 165°C  
Test  
Condition  
Operating Point  
BOP (mT)  
Release Point  
BRP (mT)  
TC  
Ioff  
(mA)  
Active Pole  
(ppm/oC)  
Typ(10)  
Typ(10)  
Typ(10)  
Typ(10)  
Min  
0.5  
0.8  
0.3  
Max  
Min  
-3.2  
-2.8  
-3.3  
Max  
-0.5  
-0.8  
-0.3  
TJ = -40°C  
TJ = 25°C  
TJ = 150°C  
2
3.2  
2.8  
3.3  
-2  
1.8  
1.8  
-1.8  
-1.8  
0
6
South pole  
5.6 MLX92221LUA-AAA-006  
DC Operating Parameters VDD = 3.5V to 9.3V, TJ = -40°C to 165°C  
Test  
Condition  
Operating Point  
BOP (mT)  
Release Point  
BRP (mT)  
TC  
Ioff  
(mA)  
Active Pole  
(ppm/oC)  
Typ(10)  
Typ(10)  
-1.25  
-0.8  
Typ(10)  
Typ(10)  
Min  
-0.5  
0
Max  
Min  
-2  
Max  
0.5  
0
TJ = -40°C  
TJ = 25°C  
TJ = 150°C  
1.25  
0.8  
2
1.6  
2
-1.6  
-2  
0
6
South pole  
-0.5  
1.25  
-1.25  
0.5  
390109224100 Rev. 1  
Page 6 of 14  
June/13  
MLX92221-AAA  
2-Wire Hall Effect Latch  
6 Magnetic Behaviour  
6.1 Latch sensor  
Pole Active  
South  
Remark  
Fig.1  
Fig.2  
North  
Note: Latch sensors are inherently Direct South or Direct North Pole Active only.  
Current level  
Current level  
IDD = ION  
IDD = ION  
IDD = IOFF  
IDD = IOFF  
0mT  
0mT  
Flux density  
Flux density  
BRP  
BOP  
BOP  
BRP  
Fig.1 South Pole Active  
Fig.2 North Pole Active  
390109224100 Rev. 1  
Page 7 of 14  
June/13  
MLX92221-AAA  
2-Wire Hall Effect Latch  
7 Performance Graphs  
7.1 IOFFLow vs. TJ  
7.4 IOFFLow vs. VDD  
Ioff, Temp = -40degC  
Ioff, Temp = 150 degC  
4.5  
4.3  
4.1  
3.9  
3.7  
3.5  
3.3  
3.1  
2.9  
2.7  
2.5  
Ioff, Vdd = 2.7V  
Ioff, Vdd = 24V  
4
3.8  
3.6  
3.4  
3.2  
3
2.8  
2.6  
2.4  
2.2  
-40  
-20  
0
20  
40  
60  
80  
100 120 140 160  
2
6
10  
14  
18  
22  
26  
7.5 IOFFHigh vs. VDD  
7.2 IOFFHigh vs. TJ  
Ioff, Temp = -40degC  
Ioff, Temp = 150 degC  
7
6.5  
6
Ioff, Vdd = 2.7V  
Ioff, Vdd = 24V  
7
6.5  
6
5.5  
5
5.5  
5
4.5  
4.5  
2
6
10  
14  
18  
22  
26  
-40 -20  
0
20  
40  
60  
80  
100 120 140 160  
7.6 ION vs. VDD  
7.5 ION vs. TJ  
15.8  
15.3  
14.8  
14.3  
13.8  
13.3  
12.8  
Ion, Temp = -40degC  
Ion, Temp = 150 degC  
Ion, Vdd = 2.7V  
Ion, Vdd = 24V  
15  
14.8  
14.6  
14.4  
14.2  
14  
13.8  
13.6  
13.4  
13.2  
13  
-40 -20  
0
20  
40  
60  
80  
100 120 140 160  
2
6
10  
14  
18  
22  
26  
390109224100 Rev. 1  
Page 8 of 14  
June/13  
MLX92221-AAA  
2-Wire Hall Effect Latch  
7.7 VDD de-rating UA package  
7.8 VDD de-rating TSOT package  
26  
UA(TO-92 3L)  
22  
18  
14  
10  
6
2
-40  
0
40  
80  
120  
160  
TA, [oC]  
390109224100 Rev. 1  
Page 9 of 14  
June/13  
MLX92221-AAA  
2-Wire Hall Effect Latch  
8 Application Information  
8.1 Typical Automotive Application Circuit  
ECU  
Notes:  
1. For proper operation, a 10nF bypass capacitor should be  
placed as close as possible to the VDD and ground(GND) pin  
For complete emissions protection a C1 = 68nF is  
recommended.  
MLX92221 / 41  
VDD  
C1  
10nF  
VCC  
TEST  
2. The TEST pin is to be left open or connected to GND.  
GND  
VHSENSE  
RSENSE  
100  
8.2 Automotive and Harsh, Noisy  
8.3 Strobing VDD application (used for  
Environments Application Circuit  
reduced self-heating)  
ECU  
ECU  
D1  
MLX92221 / 41  
MLX92221 / 41  
VDD  
C1  
68nF  
(optional,  
see Note 2)  
VDD  
C1  
68nF  
VCC  
VCC  
TEST  
TEST  
DZ1  
(optional,  
see Note 3)  
GND  
GND  
VHSENSE  
VHSENSE  
RSENSE  
100  
RSENSE  
100  
Notes:  
1. For proper operation, a 10nF to 100nF bypass capacitor should be placed as close  
as possible to the VDD and ground pin.  
VDD  
South Pole  
weak South or B =null  
12V  
2. The device could tolerate negative voltage down to -24V, so if negative transients  
over supply line VPEAK< -29V are expected, usage of the diode D1 is recommended.  
Otherwise only RSENSE is sufficient.  
When selecting the resistor RSENSE, three points are important:  
- the resistor has to limit IDD/IDDREV to 50mA maximum  
ON phase  
(1ms)  
OFF phase  
(1s)  
t
t
IDD  
IONtyp  
- the resistor has to withstand the power dissipated in both over voltage  
DD  
Valid I  
Valid IDD  
state  
conditions (VRSENSE2/RSENSE  
)
state  
IOFFtyp  
- the resulting device supply voltage VDD has to be higher than VDD min  
ON  
ON  
t
t
(VDD = VCC RSENSE.IDD  
)
3. The device could tolerate positive supply voltage up to +27V (until the maximum  
power dissipation is not exceeded), so if positive transients over supply line with  
VPEAK> 32V are expected, usage a zener diode DZ1 is recommended. The RSENSE-DZ1  
network should be sized to limit the voltage over the device below the maximum  
allowed.  
Notes:  
1. Given strobe timing is exemplary only.  
For proper operation  
2.  
, a 10nF to 100nF bypass capacitor should be placed as  
close as possible to the VDD and ground pin.  
390109224100 Rev. 1  
Page 10 of 14  
June/13  
MLX92221-AAA  
2-Wire Hall Effect Latch  
9 Standard information regarding manufacturability of Melexis products  
with different soldering processes  
Our products are classified and qualified regarding soldering technology, solderability and moisture  
sensitivity level according to following test methods:  
Reflow Soldering SMD’s (Surface Mount Devices)  
IPC/JEDEC J-STD-020  
Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices  
(classification reflow profiles according to table 5-2)  
EIA/JEDEC JESD22-A113  
Preconditioning of Nonhermetic Surface Mount Devices Prior to Reliability Testing  
(reflow profiles according to table 2)  
Wave Soldering SMD’s (Surface Mount Devices) and THD’s (Through Hole Devices)  
EN60749-20  
Resistance of plastic- encapsulated SMD’s to combined effect of moisture and soldering heat  
EIA/JEDEC JESD22-B106 and EN60749-15  
Resistance to soldering temperature for through-hole mounted devices  
Iron Soldering THD’s (Through Hole Devices)  
EN60749-15  
Resistance to soldering temperature for through-hole mounted devices  
Solderability SMD’s (Surface Mount Devices) and THD’s (Through Hole Devices)  
EIA/JEDEC JESD22-B102 and EN60749-21  
Solderability  
For all soldering technologies deviating from above mentioned standard conditions (regarding peak temperature,  
temperature gradient, temperature profile etc) additional classification and qualification tests have to be agreed  
upon with Melexis.  
The application of Wave Soldering for SMD’s is allowed only after consulting Melexis regarding assurance of  
adhesive strength between device and board.  
http://www.melexis.com/Assets/Soldering-Application-Note-and-Recommendations-5446.aspx  
Melexis is contributing to global environmental conservation by promoting lead free solutions. For more  
information on qualifications of RoHS compliant products (RoHS = European directive on the Restriction Of the  
use of certain Hazardous Substances) please visit the quality page on our website:  
http://www.melexis.com/quality.aspx  
10 ESD Precautions  
Electronic semiconductor products are sensitive to Electro Static Discharge (ESD).  
Always observe Electro Static Discharge control procedures whenever handling semiconductor products.  
390109224100 Rev. 1  
Page 11 of 14  
June/13  
MLX92221-AAA  
2-Wire Hall Effect Latch  
11 Package Information  
11.1 UA (TO92 - 3L)  
1.50+/-0.10  
4.10+/-0.20  
+0.10  
+0.10  
- 0.11  
0.74  
- 0.11  
2.62  
Notes:  
7° Typ  
7° Typ  
1. All dimensions are in millimeters  
2. Package dimension exclusive molding flash.  
3. The end flash shall not exceed 0.127 mm on  
the top side.  
+0.03  
- 0.03  
0.46  
0.00  
0.15  
Marking:  
+0.11  
0.55- 0.10  
1st Line : xxx last three digits from lot number  
2nd Line : yww  
y - last digit of year  
ww - calendar week  
0.38+/-0.03  
0.38+/-0.03  
1.27+/-0.055  
2.54+/-0.055  
45° NOM  
7° NOM  
Hall plate location  
0.9  
0.41  
0.45  
Notes:  
1. All dimensions are in millimeters  
Marked side  
1
2
3
Pin №  
Name  
Type  
Function  
1
VDD  
GND  
TEST  
Supply  
Supply Voltage pin  
2
3
Ground  
I/O  
Ground pin  
Analog & Digital I/O  
390109224100 Rev. 1  
Page 12 of 14  
June/13  
MLX92221-AAA  
2-Wire Hall Effect Latch  
11.2 SE (TSOT-3L) Package Information  
2.75 BSC  
1.00 MAX  
0.88+-0.023  
SEATING PLANE  
1.60 BSC  
see note 2  
+0.025  
-0.050  
0.075  
Notes:  
1. All dimensions are in millimeters  
2. Outermost plastic extreme width does not include mold flash or  
protrusions. Mold flash and protrusions shall not exceed 0.15mm  
per side.  
3. Outermost plastic extreme length does not include mold flash or  
protrusions. Mold flash and protrusions shall not exceed 0.25mm  
per side.  
4. The lead width dimension does not include dambar protrusion.  
Allowable dambar protrusion shall be 0.07mm total in excess of the  
lead width dimension at maximum material condition.  
0.50 BSC  
TOP VIEW  
5. Dimension is the length of terminal for soldering to a substrate.  
SIDE VIEW  
6. Dimension on SECTION B-B’ applies to the flat section of the lead  
between 0.08mm and 0.15mm from the lead tip.  
12° REF.  
TYP.  
7. Formed lead shall be planar with respect to one another with  
0.076mm at seating plane.  
BASE METAL  
WITH PLATING  
0.10 R.  
MIN.  
~
B’  
0.35 +-0.1050  
0.10 R.  
B
+/-4  
SEATING PLANE  
MIN.  
0.40+/-0.10  
0.30  
0.45  
see note 5  
0.575 REF.  
SECTION B-B’  
see note 6  
END VIEW  
1.51  
Hall plate location  
0.28  
Notes:  
1. All dimensions are in millimeters  
Package line  
TOP VIEW  
END VIEW  
SE Pin №  
Name  
VDD  
Type  
Function  
1
Supply  
Supply Voltage pin  
Analog & Digital I/O  
Ground pin  
2
3
TEST  
GND  
I/O  
Ground  
Table 1: SE Package pinout  
Note: Test pin to be left open or connected to GND in the application  
390109224100 Rev. 1  
Page 13 of 14  
June/13  
MLX92221-AAA  
2-Wire Hall Effect Latch  
12 Disclaimer  
Devices sold by Melexis are covered by the warranty and patent indemnification provisions appearing in its Term  
of Sale. Melexis makes no warranty, express, statutory, implied, or by description regarding the information set  
forth herein or regarding the freedom of the described devices from patent infringement. Melexis reserves the  
right to change specifications and prices at any time and without notice. Therefore, prior to designing this product  
into a system, it is necessary to check with Melexis for current information. This product is intended for use in  
normal commercial applications. Applications requiring extended temperature range, unusual environmental  
requirements, or high reliability applications, such as military, medical life-support or life-sustaining equipment are  
specifically not recommended without additional processing by Melexis for each application.  
The information furnished by Melexis is believed to be correct and accurate. However, Melexis shall not be liable  
to recipient or any third party for any damages, including but not limited to personal injury, property damage, loss  
of profits, loss of use, interrupt of business or indirect, special incidental or consequential damages, of any kind, in  
connection with or arising out of the furnishing, performance or use of the technical data herein. No obligation or  
liability to recipient or any third party shall arise or flow out of Melexis’ rendering of technical or other services.  
© 2012 Melexis NV. All rights reserved.  
For the latest version of this document, go to our website at  
www.melexis.com  
Or for additional information contact Melexis Direct:  
Europe, Africa:  
Phone: +32 1367 0495  
Americas:  
Asia:  
Phone: +1 248-306-5400  
E-mail: sales_usa@melexis.com  
Phone: +32 1367 0495  
E-mail: sales_asia@melexis.com  
E-mail: sales_europe@melexis.com  
ISO/TS 16949 and ISO14001 Certified  
390109224100 Rev. 1  
Page 14 of 14  
June/13  

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