WMF512K8-150CQ5A [MERCURY]
Flash, 512KX8, 150ns, CDIP32, 0.600 INCH, HERMETIC SEALED, SINGLE CAVITY, CERAMIC, SDIP-32;
| 型号： | WMF512K8-150CQ5A |
| 厂家： | 
MERCURY UNITED ELECTRONICS INC |
| 描述： | Flash, 512KX8, 150ns, CDIP32, 0.600 INCH, HERMETIC SEALED, SINGLE CAVITY, CERAMIC, SDIP-32 CD 内存集成电路 |
| 文件： | 总11页 (文件大小：619K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
512Kx8 MONOLITHIC NOR FLASH
SMD 5962-96692*
WMF512K8-XXX5
FEATURES
Access Times of 60, 70, 90, 120, 150ns
Organized as 512Kx8
Packaging
Commercial, Industrial and Military Temperature Ranges
5 Volt Programming.
• 32 pin, Hermetic Ceramic, 0.600" DIP
(Package 300)
Low Power CMOS
• 32 lead, Hermetic Ceramic, 0.400" SOJ
(Package 101)
Embedded Erase and Program Algorithms
TTL Compatible Inputs and CMOS Outputs
• 32 pin, Rectangular Ceramic Leadless Chip Carrier
(Package 601)
Page Program Operation and Internal Program Control
Time.
• 32 lead Flatpack (Package 220)
100,000 Erase/Program Cycles Minimum
Sector Erase Architecture
Note: For programming information and waveforms refer to Flash Programming 4M5 Application
Note AN0037.
This product is subject to change without notice.
* For reference only – see table on page 9
• 8 equal size sectors of 64K bytes each
• Any combination of sectors can be concurrently erased.
Also supports full chip erase
PIN CONFIGURATION FOR WMF512K8-XXX5
PIN CONFIGURATION FOR WMF512K8-XCLX5
32 DIP
32 CSOJ
32 FLATPACK
32 CLCC
TOP VIEW
TOP VIEW
A18
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
1
2
3
4
5
6
7
8
32
VCC
31 WE#
30 A17
29 A14
28 A13
27 A8
4
3 2 1 32 31 30
5
6
7
8
29
28
27
26
25
24
23
22
21
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
A14
A13
A8
26 A9
A9
25 A11
24 OE#
23 A10
22 CS#
21 I/O7
20 I/O6
19 I/O5
18 I/O4
17 I/O3
9
A11
OE#
A10
CS#
I/O7
9
10
11
12
13
10
11
12
13
14
15
16
14 15 16 17 18 19 20
PIN DESCRIPTION
A0-18
Address Inputs
Data Input/Output
Chip Select
I/O0-7
CS#
OE#
WE#
VCC
Output Enable
Write Enable
+5.0V Power
Ground
VSS
1
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4326.12E-0816-ss-WMF512K8-XXX5
WMF512K8-XXX5
ABSOLUTE MAXIMUM RATINGS (1)
RECOMMENDED OPERATING CONDITIONS
Parameter
Unit
°C
Parameter
Symbol
VCC
TA
Min
4.5
-55
-40
0
Max
5.5
Unit
V
Operating Temperature (Mil.)
Supply Voltage (VCC) (1)
-55 to +125
-2.0 to +7.0
-2.0 to +7.0
-65 to +150
+300
Supply Voltage
V
Operating Temp. (Mil.)
Operating Temp. (Ind.)
Operating Temp. (Com.)
+125
+85
+70
°C
°C
°C
Signal Voltage Range(any pin except A9) (2)
Storage Temperature Range
Lead Temperature (soldering, 10 seconds)
Data Retention Mil Temp
V
TA
°C
TA
°C
20
years
cycles
V
Endurance - erase/program cycle
A9 Voltage for sector protect (VID) (3)
NOTES:
100,000 min
-2.0 to +12.5
CAPACITANCE
TA = +25°C
Parameter
Symbol
CAD
Conditions
VI/O = 0 V, f = 1.0 MHz
Max Unit
1. Stresses above the absolute maximum rating may cause permanent damage to the device.
Extended operation at the maximum levels may degrade performance and affect reliability.
2. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions, inputs may
overshoot VSS to -2.0 V for periods of up to 20ns. Maximum DC voltage on output and I/O pins
is VCC + 0.5V. During voltage transitions, outputs may overshoot to Vcc + 2.0 V for periods of up
to 20ns.
3. Minimum DC input voltage on A9 pin is -0.5V. During voltage transitions, A9 may overshoot
Vss to -2V for periods of up to 20ns. Maximum DC input voltage on A9 is +12.5V which may
overshoot to 13.5 V for periods up to 20ns.
Address Input capacitance
Output Enable capacitance
Write Enable capacitance
Chip Select capacitance
Data I/O capacitance
15
15
15
15
15
pF
pF
pF
pF
pF
COE
VIN = 0 V, f = 1.0 MHz
VIN = 0 V, f = 1.0 MHz
VIN = 0 V, f = 1.0 MHz
VI/O = 0 V, f = 1.0 MHz
CWE
CCS
CI/O
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS – CMOS COMPATIBLE
Parameter
Symbol
ILI
Conditions
VCC = VCC MAX, VIN = GND to VCC
Min
Max
10
Unit
Input Leakage Current
Output Leakage Current
VCC Active Current for Read (1, 2)
μA
μA
mA
mA
mA
V
ILO
ICC1
ICC2
ISB
VCC = VCC MAX, VOUT = GND to VCC
CS# = VIL, OE# = VIH, f = 5MHz
CS# = VIL, OE# = VIH
10
35
V
CC Active Current for Program or Erase(2, 3)
CC Standby Current (2)
50
V
CS# = VCC ± 0.5V, f = 5MHz
1.6
Input High Voltage
Input Low Voltage
VIH
2.0
-0.5
11.5
VCC + 0.3
+0.8
12.5
0.45
VIL
V
A9 Voltage for Sector Protect
Output Low Voltage
Output High Voltage
Low VCC Lock-Out Voltage
NOTES:
VID
V
VOL
VOH1
VLKO
IOL = 8.0 mA, VCC = VCC MIN
IOH = -2.5 mA, VCC = VCC MIN
V
0.85 x VCC
3.2
V
4.2
V
1. The ICC current listed includes both the DC operating current and the frequency dependent component (at 5 MHz).
The frequency component typically is less than 2mA/MHz, with OE# at VIH
2. Maximum current specifications are tested with VCC = VCC MAX
3. ICC active while Embedded Algorithm (program or erase) is in progress.
.
2
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WMF512K8-XXX5
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS, CS# CONTROLLED
-60
-70
-90
-120
-150
Parameter
Symbol
Unit
Min
60
0
Max
Min
70
0
Max
Min
90
0
Max
Min
120
0
Max
Min
150
0
Max
Write Cycle Time
tAVAV
tWLEL
tELEH
tWC
tWS
tCP
ns
ns
Write Enable Setup Time
Chip Select Pulse Width
Address Setup Time
40
0
45
0
45
0
50
0
50
0
ns
tAVEL
tAS
ns
Data Setup Time
tDVEH
tEHDX
tELAX
tDS
40
0
45
0
45
0
50
0
50
0
ns
Data Hold Time
tDH
tAH
ns
Address Hold Time
45
20
45
20
45
20
50
20
50
20
ns
Chip Select Pulse Width High
Duration of Byte Programming Operation (1)
Sector Erase Time (2)
Read Recovery Time
Chip Programming Time
Chip Erase Time (3)
tEHEL
tCPH
ns
tWHWH1
tWHWH2
tGHEL
300
15
300
15
300
15
300
15
300
15
μs
sec
ns
0
0
0
0
0
11
64
11
64
11
64
11
64
11
64
sec
sec
NOTES:
1. Typical value for tWHWH1 is 7μs.
2. Typical value for tWHWH2 is 1sec.
3. Typical value for Chip Erase time is 8sec.
AC TEST CIRCUIT
AC Test Conditions
Parameter
Typ
Unit
Input Pulse Levels
Input Rise and Fall
VIL = 0, VIH = 3.0
V
ns
V
5
IOL
Input and Output Reference Level
Output Timing Reference Level
1.5
1.5
Current Source
V
NOTES:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75 .
D.U.T.
eff = 50 pf
VZ ≈ 1.5V
(Bipolar Supply)
C
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
IOH
Current Source
3
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Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com
WMF512K8-XXX5
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS, WE# CONTROLLED
-60
-70
-90
-120
-150
Parameter
Symbol
tAVAV
Unit
Min
60
0
Max
Min
70
0
Max
Min
90
0
Max
Min
120
0
Max
Min
150
0
Max
Write Cycle Time
tWC
tCS
tWP
tAS
ns
ns
Chip Select Setup Time
Write Enable Pulse Width
Address Setup Time
tELWL
tWLWH
tAVWH
tDVWH
tWHDX
tWHAX
tWHWL
tWHWH1
tWHWH2
tGHWL
40
0
45
0
45
0
50
0
50
0
ns
ns
Data Setup Time
tDS
40
0
45
0
45
0
50
0
50
0
ns
Data Hold Time
tDH
tAH
ns
Address Hold Time
45
20
45
20
45
20
50
20
50
20
ns
Write Enable Pulse Width High
Duration of Byte Programming Operation (1)
Sector Erase Time (2)
Read Recovery Time before Write
VCC Set-up Time
tWPH
ns
300
15
300
15
300
15
300
15
300
15
μs
sec
ms
μs
sec
ns
0
0
0
0
0
tVCS
50
50
50
50
50
Chip Programming Time
Output Enable Setup Time
Output Enable Hold Time (4)
Chip Erase Time (3)
11
64
11
64
11
64
11
64
11
64
tOES
tOEH
0
0
0
0
0
10
10
10
10
10
ns
sec
NOTES:
1. Typical value for tWHWH1 is 7μs.
2. Typical value for tWHWH2 is 1sec.
3. Typical value for Chip Erase time is 8sec.
4. For Toggle and Data# Polling.
AC CHARACTERISTICS – READ ONLY OPERATIONS
-60
Min
60
-70
Min
70
-90
Min
90
-120
Min
120
-150
Min
150
Unit
Parameter
Symbol
tAVAV
Max
Max
Max
Max
Max
Read Cycle Time
tRC
tACC
tCE
tOE
tDF
ns
ns
ns
ns
ns
ns
ns
Address Access Time
tAVQV
tELQV
tGLQV
tEHQZ
tGHQZ
tAXQX
60
60
30
20
20
70
70
35
20
20
90
90
35
20
20
120
120
50
150
150
55
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output High Z (1)
Output Enable High to Output High Z (1)
30
35
tDF
30
35
Output Hold from Address, CS# or OE# Change,
whichever is First
tOH
0
0
0
0
0
NOTE:
1. Guaranteed by design, but not tested
4
4326.12E-0816-ss-WMF512K8-XXX5
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com
WMF512K8-XXX5
PACKAGE 101 – 32 LEAD, CERAMIC SOJ
21.1 (0.830) 0.25 (0.010)
3.96 (0.156) MAX
0.89 (0.035)
Radius TYP
0.2 (0.008)
0.05 (0.002)
10.92 (0.430)
0.13 (0.005)
9.55 (0.376) 0.25 (0.010)
1.27 (0.050) 0.25 (0.010)
PIN 1 IDENTIFIER
1.27 (0.050) TYP
19.05 (0.750) TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
PACKAGE 220 – 32 LEAD, CERAMIC FLATPACK
20.83 (0.820)
0.25 (0.010)
PIN 1
2.60 (0.102) MAX
IDENTIFIER
10.41 (0.410)
0.13 (0.005)
10.16 (0.400)
0.51 (0.020)
0.43 (0.017)
0.05 (0.002)
1.27 (0.050) TYP
0.127 (0.005)
+ 0.05 (0.002)
19.05 (0.750) TYP
– 0.025 (0.001)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
5
4326.12E-0816-ss-WMF512K8-XXX5
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WMF512K8-XXX5
PACKAGE 300 – 32 PIN, CERAMIC DIP, SINGLE CAVITY SIDE BRAZED
42.4 (1.670) 0.4 (0.016)
15.04 (0.592)
0.3 (0.012)
4.34 (0.171)
0.79 (0.031)
PIN 1 IDENTIFIER
3.175 (0.125) MIN
0.25 (0.010)
0.05 (0.002)
0.84 (0.033)
0.4 (0.014)
15.24 (0.600)
0.25 (0.010)
2.54 (0.100)
TYP
1.27 (0.050)
TYP
0.46 (0.018)
0.05 (0.002)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
6
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WMF512K8-XXX5
PACKAGE 601: 32 PIN, RECTANGULAR CERAMIC LEADLESS CHIP CARRIER
7.62 (0.300) TYP
3.81
(0.150) TYP
1.27 (0.05) TYP
5.08
(0.200)
TYP
0.56 (0.022)
0.71 (0.028)
10.16
(0.400)
TYP
PIN 1
1.14 (0.045)
1.40 (0.055)
0.38 (0.015) x 45°
PIN 1 IDENTIFIER
11.25 (0.443)
11.61 (0.457)
1.63 (0.064)
2.54 (0.100)
13.79 (0.543)
14.15 (0.557)
1.02 (0.040) x 45°
3 PLACES
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
7
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WMF512K8-XXX5
ORDERING INFORMATION
W M F 512K 8 - XXX X X 5 X
MERCURY SYSTEMS
MONOLITHIC
NOR FLASH
ORGANIZATION, 512K x 8
ACCESS TIME (ns)
PACKAGE TYPE:
C = 32 Pin Ceramic DIP (Package 300)
CL = 32 Pin Rectangular Ceramic Leadless Chip Carrier (Package 601)
DE = 32 Lead Ceramic SOJ (Package 101)
FE = 32 Lead Flatpack (Package 220)
DEVICE GRADE:
Q
= Military Grade* ...........-55°C to +125°C
M = Military Screened .......-55°C to +125°C
I
= Industrial ...................-40°C to +85°C
= Commercial ...............0°C to +70°C
C
V
PP PROGRAMMING VOLTAGE
= 5V
5
LEAD FINISH:
Blank = Gold plated leads
A
= Solder dip leads
* This product is processed the same as the 5962-XXXXXHXX product but all
test and mechanical requirements are per the Mercury Systems data sheet.
8
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WMF512K8-XXX5
DEVICE TYPE
SECTOR SIZE
SPEED
PACKAGE
SMD NO.
512K x 8 Flash Monolithic
512K x 8 Flash Monolithic
512K x 8 Flash Monolithic
512K x 8 Flash Monolithic
64KByte
64KByte
64KByte
64KByte
150ns
120ns
90ns
32 pin DIP (C)
32 pin DIP (C)
32 pin DIP (C)
32 pin DIP (C)
5962-96692 01HXX
5962-96692 02HXX
5962-96692 03HXX
5962-96692 04HXX
70ns
512K x 8 Flash Monolithic
512K x 8 Flash Monolithic
512K x 8 Flash Monolithic
512K x 8 Flash Monolithic
64KByte
64KByte
64KByte
64KByte
150ns
120ns
90ns
32 lead SOJ (DE)
32 lead SOJ (DE)
32 lead SOJ (DE)
32 lead SOJ (DE)
5962-96692 01HYX
5962-96692 02HYX
5962-96692 03HYX
5962-96692 04HYX
70ns
512K x 8 Flash Monolithic
512K x 8 Flash Monolithic
512K x 8 Flash Monolithic
512K x 8 Flash Monolithic
64KByte
64KByte
64KByte
64KByte
150ns
120ns
90ns
32 lead Flatpack (FE)
32 lead Flatpack (FE)
32 lead Flatpack (FE)
32 lead Flatpack (FE)
5962-96692 01HUX
5962-96692 02HUX
5962-96692 03HUX
5962-96692 04HUX
70ns
512K x 8 Flash Monolithic
512K x 8 Flash Monolithic
512K x 8 Flash Monolithic
512K x 8 Flash Monolithic
64KByte
64KByte
64KByte
64KByte
150ns
120ns
90ns
32 lead Flatpack (FF)
32 lead Flatpack (FF)
32 lead Flatpack (FF)
32 lead Flatpack (FF)
5962-96692 01HTX
5962-96692 02HTX
5962-96692 03HTX
5962-96692 04HTX
70ns
NOTE: This table is for reference only. For 5962-96692 ordering information and specifications refer to latest SMD document.
9
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Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com
WMF512K8-XXX5
Document Title
512Kx8 MONOLITHIC NOR FLASH, SMD 5962-96692
Revision History
Rev #
History
Release Date Status
Rev 1
Initial Release
Changes (Pg. 1)
September 1996
May 1997
Preliminary
Final
1.1 Change status to Final
Changes (Pg. 1)
1.1 Correct typo of Ceramic
Changes (Pg. 10)
1.1 Remove pedestal from Flatpack package drawing
Changes (Pg. 1)
February 1998
April 1998
Final
Final
Final
February 1999
1.1 Change name from ‘FP’ to Flatpack
Rev 2
Changes (Pg. 1, 2, 3, 4, 13)
May 1999
Final
2.1 Change number of max program/erases to 1,000,000
2.2 Change temperature of max program/erases to 25C
2.3 Absolute Maximum Ratings Table:
2.3.1 Change Data Retention to 20years
2.3.2 Change Endurance to 100,000 cycles minimum
2.4 Write/Erase/Program Operations Tables:
2.4.1 Change tWHWH1 to 300μs
2.4.2 Add Note (1) Typical tWHWH1 = 7μs
2.4.3 Change tWHWH2 to 15sec
2.4.4 Add Note (2) Typical tWHWH2 = 1 sec
2.4.5 Change Chip Programming Time to 11 sec
2.4.6 Change Chip Erase Time too 64 sec
2.4.7 Add Note (3) Chip Erase Time = 8 sec
2.5 Ordering Information
2.5.1 Change Company Name to White EDC
2.6 Change Title Style to new WEDC look
Rev 3
Changes (Pg. 1, 2, 10, 12, 13)
May 1999
Final
3.1 Change package 206 to package 220
3.2 Remove temperature range notice for Endurance
3.3 Change width spec to 0.457" minimum for package 601
Rev 4
Rev 5
Rev 6
Changes (Pg. 1, 3, 4)
4.1 Add 60ns speed grade option
January 2003
April 2005
Final
Final
Final
Changes (Pg. 1, 11, 13)
5.1 Add 'T' case outline for 'FF' package
Changes (Pg. 1, 13)
November 2005
6.1 Change revision history Rev 2.4.1 to 300 μs
6.2 Change revision history Rev 2.4.2 to 7μs
Rev 7
Rev 8
Changes (Pg. 1-13)
June 2011
Final
Final
7.1 Change document layout from White Electronic Designs to Microsemi
Changes (Pg. 1, 13)
August 2011
8.1 Add "NOR" to headline
10
4326.12E-0816-ss-WMF512K8-XXX5
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com
WMF512K8-XXX5
Document Title
512Kx8 MONOLITHIC NOR FLASH (SMD 5962-96692)
Revision History
Rev #
History
Release Date Status
Rev 9
Changes (Pg. 1, 2, 3, 4, 13)
May 2012
Final
9.1 Change 1,000,000 Erase/Program Cycles Minimum to 100,000;
delete 5V ± 10% Supply;
9.2 Change A9 Voltage for sector protect from '-2.0 to + 14.0' to '-2.0 to + 12.5'
in Absolute Maximum Ratings chart; change Input High Voltage Max from
V
CC + 0.5 to VCC + 0.3, add commercial operating temp line and move VIH,
VIL and VID to the DC Characteristics chart; DC Characteristics – CMOS
Compatible chart changes include Symbols ILOx32 to ILO and ICC4 to ISB
,
Conditions VCC = 5.5 to VCC = VCC MAX, VIN = GND to Vout = GND, VCC = 5.5,
CS# = VIH to CS# = VCC ± 0.5V and VCC = 4.5 to VCC = VCC MIN, Max from 50
to 35 and 60 to 50
9.3 Change tELAX -60 from 40 to 45
9.4 Change tWHAX -60 from 40 to 45 and tOE 35 to 30
9.5 Delete all Waveforms diagrams
9.6 Add NOR to Flash and add Q = MIL-STD-883 Compliant to Device Grade
options.
Rev 10
Rev 11
Rev 12
Change (Pg. 8)
10.1 Changed Device Grade "Q" description from "MIL-STD-883 Compliant" to
"MIL-PRF-38534 Class H Compliant."
Change (Pg. 8)
11.1 Changed Device Grade "Q" description from "MIL-PRF-38534 Class H
Compliant." to "Military Grade."
Changes (Pg. All) (ECN 10156)
August 2016
Final
12.1 Change document layout from Microsemi to Mercury Systems
Mercury Systems reserves the right to change products or specifications without notice.
© 2016 Mercury Systems. All rights reserved.
11
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Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com
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