WS512K32V-20G2UI [MERCURY]

SRAM Module, 512KX32, 20ns, CMOS, CQFP68, 22.40 MM, 3.56 MM HEIGHT, CERAMIC, QFP-68;


型号：	WS512K32V-20G2UI
厂家：	MERCURY UNITED ELECTRONICS INC
描述：	SRAM Module, 512KX32, 20ns, CMOS, CQFP68, 22.40 MM, 3.56 MM HEIGHT, CERAMIC, QFP-68 静态存储器
文件：	总8页 (文件大小：921K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

WS512K32V-XXX

512Kx32 SRAM 3.3V MULTICHIP PACKAGE

FEATURES

 Access Times of 15, 17, 20ns

 Low Voltage Operation

 Packaging

 TTL Compatible Inputs and Outputs

 Fully Static Operation:

• No clock or refresh required.

 Three State Output.

• 66-pin, PGA Type, 1.075 inch square, Hermetic Ceramic

HIP (Package 400)

 Built-in Decoupling Caps and Multiple Ground Pins for Low

• 8 lead, 22.4mm (0.880 inch) CQFP, (G2U), 3.56mm

(0.140"), (Package 510)

Noise Operation

 Weight

 Organized as 512Kx32; User Conﬁgurable as 2x512Kx16

• WS512K32V-XG2UX - 8 grams typical

WS512K32NV-XH1X - 13 grams typical

or 4x512Kx8

 Commercial, Industrial and Military Temperature Ranges

 Low Voltage Operation:

* This product is subject to change without notice.

• 3.3V ± 10% Power Supply

 Low Power CMOS

PIN CONFIGURATION FOR WS512K32NV-XH1X

Top View

Pin Description

I/O_0-31

A_0-18

Data Inputs/Outputs

Address Inputs

Write Enables

Chip Selects

I/O8

I/O9

I/O10

A13

WE2#

CS²#

GND

I/O11

A10

I/O15

I/O24

I/O25

I/O26

VCC

CS4#

WE⁴#

I/O²⁷

I/O31

I/O30

I/O29

I/O28

I/O14

I/O13

I/O12

OE#

A¹⁸

WE_1-4

CS_1-4

OE#

V_CC

Output Enable

Power Supply

Ground

GND

A14

Not Connected

A15

A11

A16

A12

WE1#

I/O⁷

Block Diagram

A17

VCC

WE3#

CS³#

GND

I/O19

I/O23

I/O22

I/O21

I/O20

WE₁# CS₁#

WE₂# CS₂#

WE₃# CS₃#

WE₄# CS₄#

I/O0

I/O1

I/O2

CS1#

I/O6

I/O16

I/O17

I/O18

OE#

A_0-18

I/O5

512K x 8

I/O3

I/O4

I/O_0-7

I/O_8-15

I/O_16-23

I/O_24-31

Microsemi Corporation reserves the right to change products or speciﬁcations without notice.

Rev. 14

Microsemi Corporation • (602) 437-1520 • www.microsemi.com

WS512K32V-XXX

PIN CONFIGURATION FOR WS512K32V-XG2UX

Top View

Pin Description

I/O_0-31

A_0-18

Data Inputs/Outputs

Address Inputs

Write Enables

Chip Selects

Output Enable

Power Supply

Ground

68 67 66 65 64 63 62 61

60 I/O₁₆

WE_1-4

I/O₀10

I/O₁11

I/O₂12

I/O₃13

I/O₄14

I/O₅15

I/O₆16

I/O₇17

GND 18

I/O₈19

I/O₉20

I/O₁₀21

I/O₁₁22

I/O₁₂23

I/O₁₃24

I/O₁₄25

I/O₁₅26

CS_1-4

OE#

V_CC

59 I/O₁₇

58 I/O₁₈

57 I/O₁₉

56 I/O₂₀

55 I/O₂₁

54 I/O₂₂

53 I/O₂₃

52 GND

51 I/O₂₄

50 I/O₂₅

49 I/O₂₆

48 I/O₂₇

47 I/O₂₈

46 I/O₂₉

45 I/O₃₀

44 I/O₃₁

GND

Not Connected

Block Diagram

WE¹# CS¹#

WE²# CS²#

WE³# CS³#

WE⁴# CS⁴#

OE#

A_0-18

512K x 8

2728 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43

I/O_0-7

I/O_8-15

I/O_16-23

I/O_24-31

Microsemi Corporation reserves the right to change products or speciﬁcations without notice.

Rev. 14

Microsemi Corporation • (602) 437-1520 • www.microsemi.com

WS512K32V-XXX

ABSOLUTE MAXIMUM RATINGS

TRUTH TABLE

Mode

Standby

Read

Write

Out Disable

Data I/O

High Z

Data Out

Data In

High Z

Power

Standby

Active

Parameter

Symbol

T_A

Min

-55

Max

+125

+150

4.6

Unit

°C

Operating Temperature

Storage Temperature

Signal Voltage Relative to GND

Junction Temperature

Supply Voltage

T_STG

V_G

-65

-0.5

T_J

150

°C

V_CC

-0.5

4.6

CAPACITANCE

T_A= +25°C

RECOMMENDED OPERATING CONDITIONS

Parameter

Symbol

C_OE

C_WE

Conditions

V_IN= 0V, f = 1.0 MHz

Max Unit

Parameter

Symbol

V_CC

Min

3.0

Max

3.6

Unit

OE# capacitance

WE_1-4# capacitance

HIP (PGA)

Supply Voltage

Input High Voltage

Input Low Voltage

V_IH

2.2

V_CC+ 0.3

+0.8

V_IL

-0.3

CQFP G2U

CS_1-4# capacitance

Data# I/O capacitance

Address input capacitance

C_CS

C_I/O

C_AD

V_IN= 0V, f = 1.0 MHz

V_I/O= 0V, f = 1.0 MHz

V_IN= 0V, f = 1.0 MHz

This parameter is guaranteed by design but not tested.

DC CHARACTERISTICS

V_CC= 3.3V ± 0.3V, V_SS= 0V, -55°C ≤ T_A≤ +125°C

Parameter

Symbol

Conditions

V_IN= GND to V_CC

Min

Max

Units

μA

Input Leakage Current

Output Leakage Current

Operating Supply Current

Standby Current

I_LI

I_LO

CS# = V_IH, OE# = V_IH, V_OUT= GND to V_CC

CS# = V_IL, OE# = V_IH, f = 5MHz, V_CC= 3.6

CS# = V_IH, OE# = V_IH, f = 5MHz, V_CC= 3.6

I_OL= 4.0mA

μA

I_CCx 32

I_SB

400

200

0.4

Output Low Voltage

Output High Voltage

V_OL

V_OH

I_OH= -4.0mA

2.4

NOTE: DC test conditions: V^IH= VCC -0.3V, VIL = 0.3V.

Contact factory for low power option.

Microsemi Corporation reserves the right to change products or speciﬁcations without notice.

Rev. 14

Microsemi Corporation • (602) 437-1520 • www.microsemi.com

WS512K32V-XXX

AC CHARACTERISTICS

V_CC= 3.3V, GND = 0V, -55°C ≤ T_A≤ +125°C

-15

-17

-20

Parameter

Read Cycle

Symbol

t_RC

Min

Max

Min

Max

Min

Max

Units

Read Cycle Time

Address Access Time

t_AA

Output Hold from Address Change

Chip Select Access Time

t_OH

t_ACS

t_OE

Output Enable to Output Valid

Chip Select to Output in Low Z

Output Enable to Output in Low Z

Chip Disable to Output in High Z

Output Disable to Output in High Z

t_CLZ

t_OLZ

t_CHZ

t_OHZ

1. This parameter is guaranteed by design but not tested.

AC CHARACTERISTICS

V_CC= 3.3V, GND = 0V, -55°C ≤ T_A≤ +125°C

-15

-17

-20

Parameter

Write Cycle

Symbol

Min

Max

Min

Max

Min

Max

Units

Write Cycle Time

t_WC

t_CW

t_AW

t_DW

t_WP

t_AS

Chip Select to End of Write

Address Valid to End of Write

Data Valid to End of Write

Write Pulse Width

Address Setup Time

Address Hold Time

t_AH

Output Active from End of Write

Write Enable to Output in High Z

Data Hold Time

t_OW

t_WHZ

t_DH

1. This parameter is guaranteed by design but not tested.

AC TEST CIRCUIT

AC Test Conditions

IOL

Parameter

Typ

Unit

Current Source

Input Pulse Levels

Input Rise and Fall

Input and Output Reference Level

Output Timing Reference Level

Notes:

V_IL= 0, V_IH= 2.5

1.5

≈

1.5V

D.U.T.

(Bipolar Supply)

eff = 50 pf

_Zis programmable from -2V to +7V.

_OL& I_OHprogrammable from 0 to 16mA.

Tester Impedance Z₀= 75 Ω.

_Zis typically the midpoint of V_OHand V_OL

_OL& I_OHare adjusted to simulate a typical resistive load circuit.

ATE tester includes jig capacitance.

IOH

Current Source

Microsemi Corporation reserves the right to change products or speciﬁcations without notice.

Rev. 14

Microsemi Corporation • (602) 437-1520 • www.microsemi.com

WS512K32V-XXX

TIMING WAVEFORM – READ CYCLE

t_RC

ADDRESS

CS#

t_AA

t_RC

t_AA

ADDRESS

DATA I/O

t_CHZ

t_ACS

t_CLZ

t_OH

OE#

PREVIOUS DATA VALID

DATA VALID

t_OE

t_OLZ

t_OHZ

READ CYCLE 1 (CS# = OE# = V , WE# = V

IL IH

)

DATA I/O

DATA VALID

HIGH IMPEDANCE

READ CYCLE 2 (WE# = V

)

WRITE CYCLE – WE# CONTROLLED

t_WC

ADDRESS

t_AW

t_AH

t_CW

CS#

WE#

t_AS

t_WP

t_OW

t_DH

t_WHZ

t_DW

DATA I/O

DATA VALID

WRITE CYCLE 1, WE# CONTROLLED

WRITE CYCLE – CS# CONTROLLED

t_WC

ADDRESS

CS#

t_AW

t_AH

t_AS

t_CW

t_WP

WE#

t_DW

t_DH

DATA I/O

DATA VALID

WRITE CYCLE 2, CS# CONTROLLED

Microsemi Corporation reserves the right to change products or speciﬁcations without notice.

Rev. 14

Microsemi Corporation • (602) 437-1520 • www.microsemi.com

WS512K32V-XXX

PACKAGE 400: 66 PIN, PGA TYPE, CERAMIC HEX-IN-LINE PACKAGE, HIP (H1)

27.3 (1.075) 0.25 (0.010) Sꢀ

PIN 1 IDENTIFIER

SꢀUARE PAD

ON BOTTOM

25.4 (1.0) TYP

4.60 (0.181)

MAX

3.81 (0.150)

0.13 (0.005)

0.76 (0.030) 0.13 (0.005)

2.54 (0.100)

TYP

1.27 (0.050) TYP DIA

15.24 (0.600) TYP

25.4 (1.0) TYP

0.46 (0.018) 0.05 (0.002) DIA

ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES

PACKAGE 510: 68 LEAD, LOW PROFILE CERAMIC QUAD FLAT PACK, CQFP (G2U)

25.15 (0.990) 0.25 (0.010) Sꢀ

3.56 (0.140) MAX

22.36 (0.880) 0.25 (0.010) Sꢀ

0.254 (0.01) + 0.051 (0.002)

- 0.025 (0.001)

Pin 1

0.254 (0.010) TYP

R 0.127

(0.005)

MIN

24.0 (0.946)

0.25 (0.010)

0.53 (0.021)

0.18 (0.007)

1° / 7°

1.01 (0.040)

0.13 (0.005)

23.87

(0.940) REF

DETAIL “A”

1.27 (0.050) TYP

SEE DETAIL “A”

0.38 (0.015) 0.05 (0.002)

20.3 (0.800) REF

ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES

Microsemi Corporation reserves the right to change products or speciﬁcations without notice.

Rev. 14

Microsemi Corporation • (602) 437-1520 • www.microsemi.com

WS512K32V-XXX

ORDERING INFORMATION

W S 512K 32 X V - XXX X X X

MICROSEMI CORPORATION

SRAM

ORGANIZATION, 512Kx32

User conﬁgurable as 2x512Kx16 or 4x512Kx8

IMPROVEMENT MARK:

N = No Connect at pin 21 and 39 in HIP for Upgrades (H1 only)

Low Voltage Supply 3.3V ± 10%

ACCESS TIME (ns)

PACKAGE TYPE:

H1 = 1.075" sq. Ceramic Hex In Line Package, HIP (Package 400)

G2U = 22.4mm Ceramic Quad Flat Pack, CQFP (Package 510)

DEVICE GRADE:

M = Military

= Industrial

C = Commercial

-55°C to +125°C

-40°C to +85°C

0°C to +70°C

LEAD FINISH:

Blank = Gold plated leads

A = Solder dip leads

Microsemi Corporation reserves the right to change products or speciﬁcations without notice.

Rev. 14

Microsemi Corporation • (602) 437-1520 • www.microsemi.com

WS512K32V-XXX

Document Title

512Kx32 SRAM 3.3V MULTICHIP PACKAGE

Revision History

Rev # History

Release Date Status

Rev 14

Changes (Pg. 6) (ECN 9936)

April 2016

Final

14.1 Add document Revision History page

14.2 Update package dimensions

Microsemi Corporation reserves the right to change products or speciﬁcations without notice.

Rev. 14

Microsemi Corporation • (602) 437-1520 • www.microsemi.com

WS512K32V-20G2UI [MERCURY]

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