MDD1901 [MGCHIP]
Single N-channel Trench MOSFET 100V, 40A, 22m(ohm);
| 型号： | MDD1901 |
| 厂家： | 
MagnaChip |
| 描述： | Single N-channel Trench MOSFET 100V, 40A, 22m(ohm) |
| 文件： | 总6页 (文件大小：867K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MDD1901
Single N-channel Trench MOSFET 100V, 40A, 22mΩ
General Description
Features
The MDD1901 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDD1901 is suitable device for DC/DC
Converters and general purpose applications.
VDS = 100V
ID = 40A @VGS = 10V
RDS(ON)
< 22mΩ @VGS = 10V
< 25mΩ @VGS = 6.0V
G
S
Absolute Maximum Ratings (Tc = 25oC)
Characteristics
Drain-Source Voltage
Symbol
VDSS
Rating
100
±20
40
Unit
V
Gate-Source Voltage
VGSS
V
TC=25oC
TC=100oC
A
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
ID
24
A
IDM
80
A
TC=25oC
TC=100oC
70
PD
W
28
Single Pulse Avalanche Energy (2)
EAS
200
-55~150
mJ
oC
Junction and Storage Temperature Range
TJ, Tstg
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case (1)
Symbol
RθJA
Rating
40
Unit
oC/W
RθJC
1.8
1
August. 2010. Version 1.2
MagnaChip Semiconductor Ltd.
Ordering Information
Part Number
Temp. Range
Package
Packing
Rohs Status
MDD1901RH
-55~150oC
D-PAK
Tape & Reel
Halogen Free
Electrical Characteristics (Tc =25oC)
Characteristics
Static Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
BVDSS
VGS(th)
IDSS
ID = 250μA, VGS = 0V
VDS = VGS, ID = 250μA
VDS = 80V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS = 10V, ID = 35A
100
-
2.8
-
-
4.0
1
V
2.0
-
-
-
-
μA
Gate Leakage Current
IGSS
-
±0.1
22
33
25
-
17
28
19
35
Drain-Source ON Resistance
RDS(ON)
TJ=125oC
mΩ
VGS = 6.0V, ID = 20A
VDS = 5V, ID = 35A
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
gfs
-
S
Qg
Qgs
Qgd
Ciss
Crss
Coss
Rg
-
-
-
-
-
-
-
-
-
-
-
75
12
100
-
VDS = 50V, ID = 20A,
VGS = 10V
Gate-Source Charge
nC
Gate-Drain Charge
20
-
Input Capacitance
3090
160
235
0.8
15
-
VDS = 30V, VGS = 0V,
f = 1.0MHz
Reverse Transfer Capacitance
Output Capacitance
-
pF
-
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
-
Ω
Turn-On Delay Time
td(on)
tr
td(off)
tf
21
36
96
21
Rise Time
26
VDS=50V, VGS=10V,
RL=1.15Ω, RGEN=2.5Ω
ns
Turn-Off Delay Time
69
Fall Time
15
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VSD
trr
IS = 1A, VGS = 0V
-
-
-
0.7
70
1.2
100
-
V
ns
nC
IF = 20A, dl/dt = 100A/μs
Qrr
240
Note :
1.
2.
Surface mounted RF4 board with 2oz. Copper.
Starting TJ=25°C, L=1mH, IAS=20A, VDD=50V, VGS=10V
2
August. 2010. Version 1.2
MagnaChip Semiconductor Ltd.
100
80
60
40
20
0
40
30
20
10
6.0V ~ 10V
5.0V
4.5V
VGS=6.0V
4.0V
3.5V
VGS=10V
0
1
2
3
4
5
0
10
20
30
40
VDS, Drain-Source Voltage [V]
ID [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.1 On-Region Characteristics
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
70
60
50
40
30
20
10
0
VGS=10V
ID=35A
125
℃
25
℃
-50
-25
0
25
50
75
100
125
150
4
6
8
10
TJ, Junction Temperature [oC]
VGS [V]
Fig.3 On-Resistance Variation with
Temperature
Fig.4 On-Resistance Variation with
Gate to Source Voltage
20
15
10
5
10
1
*Note ; VDS=5.0V
0.1
0.01
1E-3
1E-4
1E-5
1E-6
125
0.2
℃
25
℃
125
℃
25
℃
0
0
1
2
3
4
5
0.0
0.4
0.6
0.8
1.0
VGS [V]
VSD [V]
Fig.5 Transfer Characteristics
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
3
August. 2010. Version 1.2
MagnaChip Semiconductor Ltd.
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
10
9
8
7
6
5
4
3
2
1
0
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
* Note ; ID = 20A
Crss = Cgd
Ciss
* Notes ;
1. VGS = 0 V
2. f = 1 MHz
Coss
Crss
0
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
35
40
Qg [nC]
VDS [V]
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
40
30
20
10
0
102
100us
1 ms
101
100
10-1
Operation in This Area
is Limited by R DS(on)
10 ms
100ms
DC
Single Pulse
Rθ =1.8 /W
℃
jC
Ta=25
℃
10-1
100
101
102
25
50
75
100
125
150
VDS [V]
TC
[ ]
℃
Fig.10 Maximum Drain Current vs. Case
Temperature
Fig.9 Maximum Safe Operating Area
101
100
D=0.5
0.2
10-1
10-2
10-3
0.1
※ Notes :
Duty Factor, D=t1/t2
0.05
PEAK TJ = PDM * Zθ Ja* Rθ J(at) + Ta
RΘ =1.8 /W
℃
0.02
0.01
JC
single pulse
10-4
10-3
10-2
10-1
100
101
102
103
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response Curve
4
August. 2010. Version 1.2
MagnaChip Semiconductor Ltd.
Package Dimension
D-PAK (TO-252)
Dimensions are in millimeters, unless otherwise specified
5
August. 2010. Version 1.2
MagnaChip Semiconductor Ltd.
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
Semiconductor Ltd.
is a registered trademark of MagnaChip
6
August. 2010. Version 1.2
MagnaChip Semiconductor Ltd.
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