MDF5N50FTH [MGCHIP]
N-Channel MOSFET 500V, 4.5 A, 1.58ohm;
| 型号： | MDF5N50FTH |
| 厂家： | 
MagnaChip |
| 描述： | N-Channel MOSFET 500V, 4.5 A, 1.58ohm |
| 文件： | 总8页 (文件大小：1459K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MDP5N50F / MDF5N50F
N-Channel MOSFET 500V, 4.5 A, 1.58Ω
General Description
Features
The MDP5N50F/MDF5N50F use advanced Magnachip’s
VDS = 500V
MOSFET Technology, which provides low on-state resistance,
high switching performance and excellent quality.
ID = 4.5A
RDS(ON) ≤ 1.58Ω @VGS = 10V
@VGS = 10V
MDP5N50F/MDF5N50F are suitable device for SMPS, HID
and general purpose applications.
Applications
Power Supply
PFC
Ballast
G
TO-220
TO-220F
MDP Series
MDF Series
S
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Symbol
VDSS
MDP5N50F
500
MDF5N50F
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VGSS
±30
V
TC=25oC
4.5
2.8
18
4.5*
2.8*
18*
27
A
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
ID
TC=100oC
A
IDM
PD
A
TC=25oC
93
W
W/ oC
Derate above 25 oC
0.74
0.22
Repetitive Avalanche Energy(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
EAR
dv/dt
EAS
93
4.5
230
mJ
V/ns
mJ
Junction and Storage Temperature Range
* Id limited by maximum junction temperature
TJ, Tstg
-55~150
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Symbol
MDP5N50F
MDF5N50F
62.5
Unit
RθJA
RθJC
62.5
1.35
oC/W
4.6
1
Jun. 2018 Version 1.3
MagnaChip Semiconductor Ltd.
Ordering Information
Part Number
MDP5N50FTH
MDF5N50FTH
Temp. Range
-55~150oC
-55~150oC
Package
TO-220
Packing
Tube
RoHS Status
Halogen Free
Halogen Free
TO-220F
Tube
Electrical Characteristics (Ta =25oC)
Characteristics
Static Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Drain-Source ON Resistance
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
BVDSS
VGS(th)
IDSS
ID = 250μA, VGS = 0V
VDS = VGS, ID = 250μA
VDS = 500V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS = 10V, ID = 2.5A
VDS = 30V, ID = 2.5A
500
2.5
-
-
-
V
-
-
4.5
10
μA
nA
Ω
IGSS
-
-
100
1.58
-
RDS(ON)
gfs
1.25
3.3
-
S
Qg
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
-
-
-
-
-
-
-
-
-
-
12.1
3.6
4.3
500
1.5
65
15.73
-
Gate-Source Charge
Gate-Drain Charge
VDS = 500V, ID = 5.0A, VGS = 10V(3)
VDS = 25V, VGS = 0V, f = 1.0MHz
nC
pF
-
Input Capacitance
650
2.25
84.5
48.3
60
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Rise Time
23
30
VGS = 10V, VDS = 250V, ID = 5.0A,
ns
RG = 25Ω(3)
Turn-Off Delay Time
Fall Time
td(off)
tf
37
77.7
60.9
29
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to
Source Diode Forward Current
Source-Drain Diode Forward
Voltage
Body Diode Reverse Recovery
Time
IS
VSD
trr
-
-
-
-
4.5
-
A
V
IS = 5.0A, VGS = 0V
1.4
80
ns
μC
IF = 5.0A, dl/dt = 100A/μs(3)
Body Diode Reverse Recovery
Charge
Qrr
1.6
Note :
1. Pulse width is based on R θJC & R θJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤4.5A, di/dt≤200A/us, V =50V, R =25Ω, Starting TJ=25°C
DD
g
4. L=20.5mH, IAS=4.5A, VDD=50V, , R =25Ω, Starting TJ=25°C
g
2
Jun. 2018 Version 1.3
MagnaChip Semiconductor Ltd.
11
10
9
2.5
2.0
1.5
1.0
Vgs=5.5V
=6.0V
Notes
1. 250㎲ Pulse Test
2. TC=25℃
=6.5V
=7.0V
8
=8.0V
=10.0V
=15.0V
7
6
VGS=10.0V
5
VGS=20V
4
3
2
1
0
5
10
15
20
0
2
4
6
8
10
12
VDS,Drain-Source Voltage [V]
ID,Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.1 On-Region Characteristics
1.2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
※ Notes :
1. VGS = 0 V
2. ID = 250㎂
※ Notes :
1. VGS = 10 V
2. ID = 2.25A
1.1
1.0
0.9
0.8
-50
0
50
100
150
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with
Temperature
Fig.4 Breakdown Voltage Variation vs.
Temperature
※ Notes :
1. VGS = 0 V
2. 250㎲ Pulse Test
* Notes ;
1. VDS=30V
10
10
150℃
25℃
1
0.0
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
2
3
4
5
6
7
8
9
10
VSD, Source-Drain Voltage [V]
VGS [V]
Fig.5 Transfer Characteristics
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
3
Jun. 2018 Version 1.3
MagnaChip Semiconductor Ltd.
1400
1200
1000
800
600
400
200
0
10
8
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
100V
250V
Coss
※ Note : ID = 4.5A
400V
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
6
Ciss
4
Crss
2
0
1
10
0
2
4
6
8
10
12
14
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
102
101
100
10-1
10-2
6
4
2
0
Operation in This Area
is Limited by R DS(on)
100 s
1 ms
10 ms
100 ms
DC
Single Pulse
TJ=Max rated
TC=25℃
10-1
100
101
102
25
50
75
100
125
150
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
MDP5N50F (TO-220)
Fig.10 Maximum Drain Current vs. Case
Temperature
10000
8000
6000
4000
2000
0
single Pulse
RthJC = 1.35℃/W
TC = 25℃
100
D=0.5
0.2
0.1
10-1
0.05
0.02
0.01
※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ (t) + TC
JC
RΘ =1.35℃/W
JC
single pulse
10-3
10-2
10-5
10-4
10-2
10-1
100
101
1E-5
1E-4
1E-3
0.01
0.1
1
10
t1, Rectangular Pulse Duration [sec]
Pulse Width (s)
Fig.12 Single Pulse Maximum Power
Dissipation – MDP5N50F (TO-220)
Fig.11 Transient Thermal Response Curve
MDP5N50F (TO-220)
4
Jun. 2018 Version 1.3
MagnaChip Semiconductor Ltd.
102
101
100
10-1
10-2
Operation in This Area
is Limited by R DS(on)
10000
8000
6000
4000
2000
0
single Pulse
RthJC = 4.6℃/W
TC = 25℃
10 s
100 s
1 ms
10 ms
100 ms
1 s
DC
Single Pulse
TJ=Max rated
TC=25℃
10-1
100
101
102
1E-5
1E-4
1E-3
0.01
0.1
1
10
Pulse Width (s)
VDS, Drain-Source Voltage [V]
Fig.12 Single Pulse Maximum Power
Dissipation- MDF5N50F (TO-220F)
Fig.13 Maximum Safe Operating Area
MDF5N50F (TO-220F)
D=0.5
100
0.2
0.1
0.05
10-1
0.02
0.01
※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ (t) + TC
JC
RΘ =4.6℃/W
JC
single pulse
10-3
10-2
10-5
10-4
10-2
10-1
100
101
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response Curve
MDF5N50F (TO-220F)
5
Jun. 2018 Version 1.3
MagnaChip Semiconductor Ltd.
Physical Dimension
3 Leads, TO-220
Dimensions are in millimeters unless otherwise specified
6
Jun. 2018 Version 1.3
MagnaChip Semiconductor Ltd.
Physical Dimension
3 Leads, TO-220F
Dimensions are in millimeters unless otherwise specified
Symbol
Min
4.50
0.63
1.15
0.33
15.47
9.60
Nom
Max
4.93
0.91
1.47
0.63
A
b
b1
C
D
E
16.13
10.71
e
2.54
F
G
L
L1
Q
2.34
6.48
12.24
2.79
2.52
3.10
3.00
2.84
6.90
13.72
3.67
2.96
3.50
3.55
Q1
￠R
7
Jun. 2018 Version 1.3
MagnaChip Semiconductor Ltd.
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
Semiconductor Ltd.
is a registered trademark of MagnaChip
8
Jun. 2018 Version 1.3
MagnaChip Semiconductor Ltd.
相关型号：
MDF6
3.5mm Pitch Miniature Double Row Connector for Secondary Power (Product Compliant to UL/CSA Standard)
HRS
MDF6-10DP-3.5DS
3.5mm Pitch Miniature Double Row Connector for Secondary Power (Product Compliant to UL/CSA Standard)
HRS
MDF6-10DP-3.5DS(05)
Board Connector, 10 Contact(s), 2 Row(s), Male, Right Angle, Solder Terminal, ROHS COMPLIANT
HRS
MDF6-10DP-3.5DSA
3.5mm Pitch Miniature Double Row Connector for Secondary Power (Product Compliant to UL/CSA Standard)
HRS
MDF6-10DP-3.5DSA(05)
Board Connector, 10 Contact(s), 2 Row(s), Male, Straight, Solder Terminal, ROHS COMPLIANT
HRS
MDF6-10DS-3.5C
3.5mm Pitch Miniature Double Row Connector for Secondary Power (Product Compliant to UL/CSA Standard)
HRS
MDF6-12DP-3.5DSA
3.5mm Pitch Miniature Double Row Connector for Secondary Power (Product Compliant to UL/CSA Standard)
HRS
MDF6-12DP-3.5DSA(05)
Board Connector, 12 Contact(s), 2 Row(s), Male, Straight, Solder Terminal, ROHS COMPLIANT
HRS
©2020 ICPDF网 联系我们和版权申明