MDI6N65BTH [MGCHIP]
N-Channel MOSFET 650V, 5.7A, 1.45(ohm);
| 型号： | MDI6N65BTH |
| 厂家： | 
MagnaChip |
| 描述： | N-Channel MOSFET 650V, 5.7A, 1.45(ohm) |
| 文件： | 总6页 (文件大小：935K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MDI6N65B
N-Channel MOSFET 650V, 5.7A, 1.45Ω
General Description
Features
The MDI6N65B use advanced Magnachip’s
MOSFET Technology, which provides low on-state
resistance, high switching performance and
excellent quality.
VDS = 650V
ID = 5.7A
RDS(ON) ≤ 1.45Ω
@VGS = 10V
@VGS = 10V
MDI6N65B is suitable device for SMPS, HID and
general purpose applications.
Applications
Power Supply
PFC
Ballast
G
D
S
TO-251-SS
(IPAK-SS)
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Symbol
Rating
650
Unit
V
VDSS
VGSS
Gate-Source Voltage
±30
V
TC=25oC
TC=100oC
5.7
A
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
ID
3.6
A
IDM
PD
22.8
119
A
TC=25oC
Derate above 25 oC
W
0.95
4.5
W/ oC
V/ns
mJ
A
Peak Diode Recovery dv/dt(3)
Repetitive Pulse Avalanche Energy(4)
Avalanche current(1)
dv/dt
EAR
11.9
5.7
Iar
Single Pulse Avalanche Energy(4)
EAS
200
mJ
oC
Junction and Storage Temperature Range
TJ, Tstg
-55~150
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Symbol
RθJA
Rating
110
Unit
oC/W
oC/W
RθJC
1.05
1
Jul. 2014. Ver. 1.2
MagnaChip Semiconductor Ltd.
Ordering Information
Part Number
Temp. Range
Package
Packing
RoHS Status
MDI6N65BTH
-55~150oC
TO-251-SS
Tube
Halogen Free
Electrical Characteristics (Ta =25oC)
Characteristics
Static Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
BVDSS
VGS(th)
ID = 250μA, VGS = 0V
VDS = VGS, ID = 250μA
VDS = 600V, VGS = 0V
VDS = 650V, VGS = 0V
VGS = ±30V, VDS = 0V
650
-
-
-
-
-
-
V
2.0
4.0
1
-
-
-
Drain Cut-Off Current
IDSS
μA
10
100
Gate Leakage Current
Drain-Source ON Resistance
Forward Transconductance
Gate Input Resistance
Dynamic Characteristics
Total Gate Charge
IGSS
RDS(ON)
gfs
nA
Ω
VGS = 10V, ID = 2.8A
VDS = 30V, ID = 2.8A
f = 1MHz
1.22
7
1.45
-
-
-
-
S
Rg
8.3
Ω
Qg
Qgs
Qgd
Ciss
Crss
Coss
-
-
-
-
-
-
19.4
3.75
8
25.2
Gate-Source Charge
VDS = 520V, ID = 6.0A, VGS = 10V(3)
-
-
-
-
-
nC
Gate-Drain Charge
Input Capacitance
780
7
Reverse Transfer Capacitance
Output Capacitance
VDS = 25V, VGS = 0V, f = 1.0MHz
VGS = 0V, VDS = 0V to 520V
pF
pF
85
Effective Output Capacitance Energy
Co(er)
Co(tr)
-
-
26
79
-
-
Related(5)
Effective Output Capacitance Time
Related(6)
Turn-On Delay Time
Rise Time
td(on)
tr
td(off)
tf
-
-
-
-
16
30
66
47
-
-
VGS = 10V, VDS = 325V, ID = 6.0A,
ns
RG = 25Ω(3)
Turn-Off Delay Time
Fall Time
140
105
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to Source
Diode Forward Current
IS
-
-
-
5.7
A
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VSD
trr
IS = 5.7, VGS = 0V
-
-
-
-
1.4
450
-
V
275
4.2
ns
μC
IF = 6.0A, dl/dt = 100A/μs
Qrr
Note :
1. Pulse width is based on R θJC & R θJA and the maximum allowed junction temperature of 150°C
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C
3. ISD ≤5.7A, di/dt≤200A/us, V ≤BVdss, R =25Ω, Starting TJ=25°C
DD
g
4. L=11.4mH, IAS=5.7A, VDD=50V, R =25Ω, Starting TJ=25°C
g
5. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS
6. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
2
Jul. 2014. Ver. 1.2
MagnaChip Semiconductor Ltd.
10
9
8
7
6
5
4
3
2
1
0
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
Vgs=4.5V
=5.0V
=5.5V
=6.0V
=6.5V
=7.0V
=8.0V
=10.0V
=15.0V
VGS=10.0V
VGS=20V
Notes
1. 250㎲ Pulse Test
2. TC=25℃
0
5
10
15
20
0
1
2
3
4
5
6
7
8
9
10
11
VDS,Drain-Source Voltage [V]
ID,Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.1 On-Region Characteristics
Ohm
1.2
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
※ Notes :
1. VGS = 0 V
2. ID = 250㎂
※ Notes :
1. VGS = 10 V
2. ID = 2.8A
1.1
1.0
0.9
0.8
98%
Typ
-50
0
50
100
150
-50
0
50
100
150
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with
Temperature
Fig.4 Breakdown Voltage Variation vs.
Temperature
※ Notes :
1. VGS = 0 V
* Notes ;
10
1. Vds=30V
2.250s Pulse test
10
150℃
25℃
150℃
25℃
-55℃
1
1
0.4
4
5
6
7
0.6
0.8
1.0
1.2
VSD, Source-Drain Voltage [V]
VGS [V]
Fig.5 Transfer Characteristics
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
3
Jul. 2014. Ver. 1.2
MagnaChip Semiconductor Ltd.
1600
1400
1200
1000
800
600
400
200
0
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
10
8
※ Note : ID = 6.0A
Coss
130V
325V
520V
Ciss
6
4
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
Crss
2
0
1
10
0
2
4
6
8
10
12
14
16
18
20
22
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
102
15000
12000
9000
6000
3000
0
Operation in This Area
is Limited by R DS(on)
single Pulse
10 s
100 s
1 ms
RthJC = 1.05℃/W
TC = 25℃
101
100
10 ms
100 ms
DC
10-1
Single Pulse
TJ=Max rated
TC=25℃
10-2
10-1
1E-5
1E-4
1E-3
0.01
0.1
1
10
100
101
102
Pulse Width (s)
VDS, Drain-Source Voltage [V]
Fig.10 Single Pulse Maximum Power
Dissipation
Fig.9 Maximum Safe Operating Area
8
7
6
5
4
3
2
1
0
100
10-1
10-2
D=0.5
0.2
0.1
0.05
0.02
※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ (t) + TC
0.01
JC
RΘ =1.05℃/W
JC
single pulse
10-3
10-5
10-4
10-2
10-1
100
101
25
50
75
100
125
150
t1, Rectangular Pulse Duration [sec]
TC, Case Temperature [℃]
Fig.11 Transient Thermal Response Curve
Fig.15 Maximum Drain Current vs. Case
Temperature
4
Jul. 2014. Ver. 1.2
MagnaChip Semiconductor Ltd.
Physical Dimension
TO-251-SS (IPAK-SS)
Dimensions are in millimeters, unless otherwise specified
5
Jul. 2014. Ver. 1.2
MagnaChip Semiconductor Ltd.
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
Semiconductor Ltd.
is a registered trademark of MagnaChip
6
Jul. 2014. Ver. 1.2
MagnaChip Semiconductor Ltd.
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