MDP13N50TH [MGCHIP]

N-Channel MOSFET 500V, 13.0A, 0.5(ohm);


型号：	MDP13N50TH
厂家：	MagnaChip
描述：	N-Channel MOSFET 500V, 13.0A, 0.5(ohm)
文件：	总6页 (文件大小：851K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Novꢀ2009.ꢀVersionꢀ2.0ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

ꢀ

ꢀ MDP13N50ꢀ^ꢀ

ꢀ

ꢀ NꢁChannelꢀMOSFETꢀ500V,ꢀ13.0A,ꢀ0.5Ωꢀ

GeneralꢀDescriptionꢀ

Featuresꢀ

ꢀ

TheꢀMDP13N50ꢀusesꢀadvancedꢀMagnachip’sꢀ

MOSFETꢀTechnology,ꢀwhichꢀprovidesꢀlowꢀonꢁ

stateꢀresistance,ꢀhighꢀswitchingꢀperformanceꢀ

andꢀexcellentꢀquality.ꢀ

MDP13N50ꢀisꢀsuitableꢀdeviceꢀforꢀSMPS,ꢀHIDꢀ

andꢀgeneralꢀpurposeꢀapplications.ꢀ

ꢀ

ꢀꢀV_DSꢀ=ꢀ500Vꢀ

ꢀꢀI_Dꢀ=ꢀ13.0Aꢀ ꢀ @V_GSꢀ=ꢀ10Vꢀ

ꢀꢀR_DS(ON)ꢀ<ꢀ0.5ꢀꢀ ꢀ @V_GSꢀ=ꢀ10Vꢀ

Applicationsꢀ

ꢀ

ꢀꢀPowerꢀSupplyꢀ

ꢀꢀHIDꢀ

ꢀꢀLightingꢀ

ꢀ ꢀ ꢀ

ꢀ

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

ꢀ

AbsoluteꢀMaximumꢀRatingsꢀ(Taꢀ=ꢀ25^oC)ꢀ ꢀ

Characteristicsꢀ

ꢀ

Symbolꢀ

V_DSS

V_DSSꢀ@ꢀT_jmax

V_GSS

Ratingꢀ

500ꢀ

Unitꢀ

Vꢀ

ꢀ ꢀ DrainꢁSourceꢀVoltageꢀ

ꢀ ꢀ DrainꢁSourceꢀVoltageꢀ@ꢀTjmaxꢀ

ꢀ ꢀ GateꢁSourceꢀVoltageꢀ

ꢀ

550ꢀ

Vꢀ

ꢀ

±30ꢀ

Vꢀ

ꢀ T_C=25^oCꢀ

ꢀ T_C=100^oCꢀ

13ꢀ

Aꢀ

ꢀ ꢀ ContinuousꢀDrainꢀCurrentꢀ

I_Dꢀ

I_DM

P_Dꢀ

8.2ꢀ

Aꢀ

ꢀ ꢀ PulsedꢀDrainꢀCurrent⁽¹⁾

ꢀ ꢀ PowerꢀDissipationꢀ

ꢀ

52ꢀ

Aꢀ

ꢀ T_C=25^oCꢀ

Derateꢀaboveꢀ25 ^oCꢀ

187ꢀ

Wꢀ

W/ ^oCꢀ

1.49ꢀ

4.5ꢀ

ꢀ ꢀ PeakꢀDiodeꢀRecoveryꢀdv/dt⁽³⁾

ꢀ ꢀ SingleꢀPulseꢀAvalancheꢀEnergy⁽⁴⁾

ꢀ

Dv/dtꢀ

E_AS

T_J,ꢀT_stg

V/nsꢀ

mJꢀ

^oC

ꢀ

580ꢀ

ꢀ ꢀ JunctionꢀandꢀStorageꢀTemperatureꢀRangeꢀ

ꢀ

ꢁ55~150ꢀ

ꢀ

ThermalꢀCharacteristicsꢀ

Characteristicsꢀ

ThermalꢀResistance,ꢀJunctionꢁtoꢁAmbient⁽¹⁾

ThermalꢀResistance,ꢀJunctionꢁtoꢁCase⁽¹⁾

Symbolꢀ

R_θJA

R_θJC

Ratingꢀ

Unitꢀ

ꢀ

62.5ꢀ

0.67ꢀ

^oC/Wꢀ

ꢀ

1ꢀ

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.

ꢀ

OrderingꢀInformationꢀ

ꢀ

PartꢀNumberꢀ

Temp.ꢀRangeꢀ

Packageꢀ

Packingꢀ

Tubeꢀ

ROHSꢀstatusꢀ

MDP13N50THꢀ

ꢁ55~150^oCꢀ

TOꢁ220ꢀ

HalogenꢀFreeꢀ

ꢀ

ElectricalꢀCharacteristicsꢀ(Taꢀ=25^oC)ꢀ

Characteristicsꢀ

Symbolꢀ

TestꢀConditionꢀ

Minꢀ

Typꢀ

Maxꢀ

ꢀ

Unitꢀ

StaticꢀCharacteristicsꢀ

ꢀ

500ꢀ

3.0ꢀ

ꢁꢀ

ꢀ

ꢀ ꢀ DrainꢁSourceꢀBreakdownꢀVoltageꢀ BV_DSS

ꢀ

ꢀ ꢀ I_Dꢀ=ꢀ250ꢂA,ꢀV_GSꢀ=ꢀ0Vꢀ

ꢀ ꢀ V_DSꢀ=ꢀV_GS,ꢀI_Dꢀ=ꢀ250ꢂAꢀ

ꢀ ꢀ V_DSꢀ=ꢀ500V,ꢀV_GSꢀ=ꢀ0Vꢀ

ꢀ ꢀ V_GSꢀ=ꢀ±30V,ꢀV_DSꢀ=ꢀ0Vꢀ

V_GSꢀ=ꢀ10V,ꢀI_Dꢀ=ꢀ6.5Aꢀ

ꢁꢀ

Vꢀ

ꢀ ꢀ GateꢀThresholdꢀVoltageꢀ

ꢀ ꢀ DrainꢀCutꢁOffꢀCurrentꢀ

ꢀ ꢀ GateꢀLeakageꢀCurrentꢀ

ꢀ ꢀ DrainꢁSourceꢀONꢀResistanceꢀ

ꢀ ꢀ ForwardꢀTransconductanceꢀ

DynamicꢀCharacteristicsꢀ

ꢀ ꢀ TotalꢀGateꢀChargeꢀ

V_GS(th)

I_DSS

I_GSS

ꢀ

5.0ꢀ

1ꢀ

ꢀ

ꢂAꢀ

nAꢀ

ꢃꢀ

ꢀ

ꢁꢀ

100ꢀ

0.5ꢀ

ꢁꢀ

R_DS(ON)

g_fsꢀ

ꢀ

0.39ꢀ

ꢀ ꢀ 13ꢀ

ꢀ ꢀ V_DSꢀ=ꢀ40V,ꢀI_Dꢀ=ꢀ6.5Aꢀ

ꢁꢀ

Sꢀ

Q_gꢀ

Q_gsꢀ

Q_gdꢀ

ꢁꢀ

33ꢀ

10.4ꢀ

13ꢀ

ꢀ

V_DSꢀ=ꢀ400V,ꢀI_Dꢀ=ꢀ13A,ꢀV_GSꢀ=ꢀ10V⁽³⁾

ꢀ

nCꢀ

ꢀ ꢀ GateꢁSourceꢀChargeꢀ

ꢀ ꢀ GateꢁDrainꢀChargeꢀ

ꢀ ꢀ InputꢀCapacitanceꢀ

C_iss

C_rss

C_oss

t_d(on)

t_rꢀ

t_d(off)

t_fꢀ

ꢀ

1390ꢀ

6.3ꢀ

ꢀ ꢀ V_DSꢀ=ꢀ25V,ꢀV_GSꢀ=ꢀ0V,ꢀfꢀ=ꢀ1.0MHzꢀ

pFꢀ

nsꢀ

ꢀ ꢀ ReverseꢀTransferꢀCapacitanceꢀ

ꢀ ꢀ OutputꢀCapacitanceꢀ

ꢀ ꢀ TurnꢁOnꢀ ꢀ DelayꢀTimeꢀ

ꢀ ꢀ RiseꢀTimeꢀ

ꢀ

173ꢀ

30.2ꢀ

52.8ꢀ

60.8ꢀ

33.8ꢀ

ꢀ

V_GSꢀ=ꢀ10V,ꢀV_DSꢀ=ꢀ250V,ꢀI_Dꢀ=ꢀ13A,ꢀ

R_Gꢀ=ꢀ25ꢃ⁽³⁾

ꢀ

ꢀ ꢀ TurnꢁOffꢀDelayꢀTimeꢀ

ꢀ ꢀ FallꢀTimeꢀ

DrainꢁSourceꢀBodyꢀDiodeꢀCharacteristicsꢀ

MaximumꢀContinuousꢀDrainꢀtoꢀ

SourceꢀDiodeꢀForwardꢀCurrentꢀ

ꢀ ꢀ SourceꢁDrainꢀDiodeꢀForwardꢀ

Voltageꢀ

ꢀ ꢀ BodyꢀDiodeꢀReverseꢀRecoveryꢀ

Timeꢀ

ꢀ ꢀ BodyꢀDiodeꢀReverseꢀRecoveryꢀ

Chargeꢀ

I_Sꢀ

ꢁꢀ

13ꢀ

ꢀ

ꢁꢀ

Aꢀ

Vꢀ

V_SD

ꢀ

ꢀ ꢀ I_Sꢀ=ꢀ13A,ꢀV_GSꢀ=ꢀ0Vꢀ

1.4ꢀ

t_rrꢀ

325ꢀ

2.9ꢀ

ꢀ

nsꢀ

ꢂCꢀ

ꢀ ꢀ I_Fꢀ=ꢀ13A,ꢀdl/dtꢀ=ꢀ100A/ꢂs⁽³⁾

ꢀ

Q_rrꢀ

ꢀ

Noteꢀ:ꢀ

1.ꢀPulseꢀwidthꢀisꢀbasedꢀonꢀRꢀθJCꢀ&ꢀRꢀθJAꢀandꢀtheꢀmaximumꢀallowedꢀjunctionꢀtemperatureꢀofꢀ150°C.ꢀ

2.ꢀPulseꢀtest:ꢀpulseꢀwidthꢀ ≤300us,ꢀdutyꢀcycle≤2%,ꢀpulseꢀwidthꢀlimitedꢀbyꢀjunctionꢀtemperatureꢀTJ(MAX)=150°C.ꢀ

3.ꢀI_SDꢀ≤9.0A,ꢀdi/dt≤200A/us,ꢀV =50V,ꢀR ꢀ=25ꢃ,ꢀStartingꢀTJ=25°Cꢀ

4.ꢀL=6.2mH,ꢀI_AS=13.0A,ꢀV_DD=50V,ꢀ,ꢀR ꢀ=25ꢃ,ꢀStartingꢀTJ=25°Cꢀ ꢀ

ꢀ

2ꢀ

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.

ꢀ

0.9

0.8

0.7

0.6

0.5

0.4

ꢀV =5.5V

ꢀꢀꢀꢀꢀꢀ=6.0V

ꢀꢀꢀꢀꢀꢀ=6.5V

ꢀꢀꢀꢀꢀꢀ=7.0V

ꢀꢀꢀꢀꢀꢀ=8.0V

ꢀꢀꢀꢀꢀꢀ=10.0V

V_GS=10.0V

V_GS=20V

Notesꢀꢀ

ꢀ1.ꢀ250㎲ꢀPulseꢀTest

ꢀ2.ꢀT =25℃

V ,DrainꢁSourceꢀVoltageꢀ[V]

I_D,DrainꢀCurrentꢀ[A]

Fig.2ꢀOnꢁResistanceꢀVariationꢀwithꢀ

DrainꢀCurrentꢀandꢀGateꢀVoltageꢀ

Fig.1ꢀOnꢁRegionꢀCharacteristicsꢀ

ꢀ

1.2

1.8

1.6

1.4

1.2

1.0

0.8

0.6

※ꢀNotesꢀ:

ꢀꢀꢀ1.ꢀV_GSꢀ=ꢀ0ꢀV

ꢀꢀꢀ2.ꢀI_Dꢀꢀꢀꢀ=ꢀ250㎂

※ꢀNotesꢀ:

ꢀꢀꢀ1.ꢀV_GSꢀ=ꢀ10ꢀV

ꢀꢀꢀ2.ꢀI_Dꢀ=ꢀ5ꢀA

1.1

1.0

0.9

0.8

V_GS=10V

V_GS=4.5V

ꢁ50

100

150

200

ꢁ50

ꢁ25

100

125

150

T_J,ꢀJunctionꢀTemperatureꢀ[^oC]

Fig.3ꢀOnꢁResistanceꢀVariationꢀwithꢀ

Temperatureꢀ

ꢀ

Fig.4ꢀ Breakdownꢀ Voltageꢀ Variationꢀ vs.ꢀ

Temperatureꢀ

ꢀ

100

※ꢀNotesꢀ:

ꢀꢀꢀ1.ꢀV_GSꢀ=ꢀ0ꢀV

ꢀꢀꢀ2.ꢀI_Dꢀꢀꢀꢀ=ꢀ250㎂

*ꢀNotesꢀ;

ꢀꢀꢀ1.ꢀV_DS=30V

150℃

25℃

150℃

25℃

ꢁ55℃

0.1

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

V_SD,ꢀSourceꢁDrainꢀVoltageꢀ[V]

V_GSꢀ[V]

Fig.5ꢀTransferꢀCharacteristicsꢀ

ꢀ

Fig.6ꢀBodyꢀDiodeꢀForwardꢀVoltageꢀ

VariationꢀwithꢀSourceꢀCurrentꢀandꢀ

Temperatureꢀ

ꢀ

3ꢀ

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.

ꢀ

3000

2800

2600

2400

2200

2000

1800

1600

1400

1200

1000

800

_issꢀ=ꢀC_gsꢀ+ꢀC_gdꢀ(C_dsꢀ=ꢀshorted)

C_ossꢀ=ꢀC_dsꢀ+ꢀC_gd

_rssꢀ=ꢀC_gd

C_oss

※ꢀNoteꢀ:ꢀI_Dꢀ=ꢀ13.0A

100V

250V

400V

iss

※ꢀNotesꢀ;

ꢀꢀꢀ1.ꢀV_GSꢀ=ꢀ0ꢀV

ꢀꢀꢀ2.ꢀfꢀ=ꢀ1ꢀMHz

C_rss

600

400

200

0.1

10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40

Q_G,ꢀTotalꢀGateꢀChargeꢀ[nC]

V_DS,ꢀDrainꢁSourceꢀVoltageꢀ[V]

Fig.7ꢀGateꢀChargeꢀCharacteristicsꢀ

Fig.8ꢀCapacitanceꢀCharacteristicsꢀ

ꢀ

10²

10¹

10⁰

10^ꢁ1

10^ꢁ2

10ꢀµs

OperationꢀinꢀThisꢀAreaꢀ

isꢀLimitedꢀbyꢀRꢀ_DS(on)

100ꢀµs

1ꢀms

10ꢀms

100ꢀms

SingleꢀPulse

T_J=Maxꢀrated

T_C=25℃

100

125

150

10^ꢁ1

10⁰

10¹

10²

T_C,ꢀCaseꢀTemperatureꢀ[℃]

V_DS,ꢀDrainꢁSourceꢀVoltageꢀ[V]

Fig.9ꢀMaximumꢀSafeꢀOperatingꢀAreaꢀ

Fig.10ꢀMaximumꢀDrainꢀCurrentꢀvs.ꢀCaseꢀ

Temperatureꢀ

ꢀ

10⁰

24000

22000

20000

18000

16000

14000

12000

10000

8000

6000

4000

2000

singleꢀPulse

R_thJCꢀ=ꢀ0.67℃/W

T_Cꢀ=ꢀ25℃

D=0.5

0.2

ꢁ1

0.1

0.05

0.02

0.01

※ꢀNotesꢀ:

ꢀꢀꢀꢀꢀꢀDutyꢀFactor,ꢀD=t₁/t₂

ꢀꢀꢀꢀꢀꢀPEAKꢀT_Jꢀ=ꢀP_DMꢀ*ꢀZ_θꢀ*ꢀR_θ(t)ꢀ+ꢀT_C

ꢀꢀꢀꢀꢀꢀR_Θ=0.67℃/W

singleꢀpulse

10^ꢁ3

ꢁ2

10^ꢁ5

10^ꢁ4

10^ꢁ2

10⁰

10¹

ꢁ1

1Eꢁ5

1Eꢁ4

1Eꢁ3

0.01

0.1

t₁,ꢀRectangularꢀPulseꢀDurationꢀ[sec]

PulseꢀWidthꢀ(s)

Fig.12ꢀSingleꢀPulseꢀMaximumꢀPowerꢀ

Dissipationꢀ

Fig.11ꢀTransientꢀThermalꢀResponseꢀCurveꢀ

ꢀ

4ꢀ

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.

ꢀ

PhysicalꢀDimension

ꢀ

TO220,ꢀ3Lꢀ

ꢀ

Dimensionsꢀareꢀinꢀmillimeters,ꢀunlessꢀotherwiseꢀspecifiedꢀ

ꢀ

5ꢀ

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.

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generation,ꢀ medicalꢀ appliances,ꢀ andꢀ devicesꢀ orꢀ systemsꢀinꢀ whichꢀ malfunctionꢀ ofꢀ anyꢀ Productꢀ canꢀ reasonablyꢀ beꢀ

expectedꢀ toꢀ resultꢀ inꢀ aꢀ personalꢀ injury.ꢀꢀ Seller’sꢀ customersꢀ usingꢀ orꢀ sellingꢀ Seller’sꢀ productsꢀ forꢀ useꢀ inꢀ suchꢀ

applicationsꢀdoꢀsoꢀatꢀtheirꢀownꢀriskꢀandꢀagreeꢀtoꢀfullyꢀdefendꢀandꢀindemnifyꢀSeller.ꢀ

ꢀ

\ꢀ

ꢀ

MagnaChipꢀreservesꢀtheꢀrightꢀtoꢀchangeꢀtheꢀspecificationsꢀandꢀcircuitryꢀwithoutꢀnoticeꢀatꢀanyꢀtime.ꢀMagnaChipꢀdoesꢀnotꢀconsiderꢀresponsibilityꢀ

forꢀ useꢀ ofꢀ anyꢀ circuitryꢀ otherꢀ thanꢀ circuitryꢀ entirelyꢀ includedꢀ inꢀ aꢀ MagnaChipꢀ product.ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ isꢀ aꢀ registeredꢀ trademarkꢀ ofꢀ MagnaChipꢀ

SemiconductorꢀLtd.ꢀ

ꢀ

6ꢀ

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.

MDP13N50TH [MGCHIP]

相关型号：

MDP14

MDP140010R0FD04

MDP140010R0FE04

MDP140010R0GD04

MDP140010R0GE04

MDP140010R0JD04

MDP140010R0JE04

MDP140010R0SD04

MDP140010R0SE04

MDP14001M00FD04

MDP14001M00FE04

MDP14001M00GD04