MDP1923TH [MGCHIP]
Single N-channel Trench MOSFET 100V, 69A, 13.9m(ohm);
| 型号： | MDP1923TH |
| 厂家： | 
MagnaChip |
| 描述： | Single N-channel Trench MOSFET 100V, 69A, 13.9m(ohm) |
| 文件： | 总6页 (文件大小：959K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MDP1923
Single N-channel Trench MOSFET 100V, 69A, 13.9mΩ
General Description
Features
The MDP1923 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDP1923 is suitable device for Synchronous
Rectification for Server / Adapter and general purpose
applications.
VDS = 100V
ID = 69A @VGS = 10V
RDS(ON)
< 13.9 mΩ @VGS = 10V
100% UIL Tested
100% Rg Tested
G
S
TO-220
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Symbol
VDSS
Rating
Unit
V
100
±20
69
Gate-Source Voltage
VGSS
V
TC=25oC
Continuous Drain Current (1)
TC=100oC
ID
44
A
Pulsed Drain Current
IDM
276
139
56
TC=25oC
Power Dissipation
PD
W
TC=100oC
(2)
Single Pulse Avalanche Energy
EAS
72
mJ
oC
Junction and Storage Temperature Range
TJ, Tstg
-55~150
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient (1)
Thermal Resistance, Junction-to-Case
Symbol
RθJA
Rating
62.5
Unit
oC/W
RθJC
0.9
1
Jun. 2015. Rev 1.1
MagnaChip Semiconductor Ltd.
Ordering Information
Part Number
Temp. Range
Package
Packing
RoHS Status
MDP1923TH
-55~150oC
TO-220
Tube
Halogen Free
Electrical Characteristics (TJ =25oC)
Characteristics
Static Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
BVDSS
VGS(th)
IDSS
ID = 250μA, VGS = 0V
VDS = VGS, ID = 250μA
VDS = 80V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS = 10V, ID = 15A
VDS = 10V, ID = 15A
100
-
3.0
-
-
V
2.0
4.0
1.0
±0.1
13.9
-
-
-
-
-
μA
Gate Leakage Current
IGSS
-
Drain-Source ON Resistance
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
RDS(ON)
gfs
10.8
56
mΩ
S
Qg
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
-
-
-
-
-
-
-
-
-
-
-
42.8
11.7
8.0
-
-
-
-
-
-
-
-
-
-
-
VDS = 50V, ID = 25A,
VGS = 10V
Gate-Source Charge
nC
pF
Gate-Drain Charge
Input Capacitance
2,802
37
VDS = 40V, VGS = 0V,
f = 1.0MHz
Reverse Transfer Capacitance
Output Capacitance
432
Turn-On Delay Time
10.6
10.1
32.5
11.9
1.30
Rise Time
VGS = 10V, VDS = 25V,
ID = 50A , RG = 3.0Ω
ns
Turn-Off Delay Time
td(off)
tf
Fall Time
Gate Resistance
Rg
f=1 MHz
Ω
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VSD
trr
IS = 25A, VGS = 0V
-
-
-
0.8
57.6
138.5
1.2
V
ns
nC
IF = 25A, dl/dt = 150A/μs
Qrr
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited
2. EAS is tested at starting Tj = 25℃, L = 1.0mH, IAS = 12.0A, VGS = 10V.
2
Jun. 2015. Rev 1.1
MagnaChip Semiconductor Ltd.
100
90
80
70
60
50
40
30
20
10
0
16
14
12
10
8
10 V
8.0 V
6.0 V
7.0 V
5.0 V
4.5 V
VGS = 10V
4.0 V
6
0
20
40
60
80
100
0
1
2
3
4
5
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.1 On-Region Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
30
25
20
15
10
5
※ Notes :
1. VGS = 10 V
2. ID = 15 A
※ Notes :
ID = 15A
TA = 25℃
0
2
3
4
5
6
7
8
9
10
-50
-25
0
25
50
75
100
125
150
VGS, Gate to Source Volatge [V]
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with
Temperature
Fig.4 On-Resistance Variation with
Gate to Source Voltage
80
70
60
50
40
30
20
10
0
90
80
70
60
50
40
30
20
10
0
※ Notes :
※ Notes :
VGS = 0V
VDS = 10V
TA=25℃
TC = 25℃
0.0
0.3
0.6
0.9
1.2
1.5
0
1
2
3
4
5
6
7
8
VSD, Source-Drain Voltage [V]
VGS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
3
Jun. 2015. Rev 1.1
MagnaChip Semiconductor Ltd.
4000
3000
2000
1000
0
10
8
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
※ Note : ID = 25A
VDS = 50V
Crss = Cgd
Ciss
6
※ Notes ;
4
1. VGS = 0 V
2. f = 1 MHz
Coss
2
Crss
0
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
80
70
60
50
40
30
20
10
0
102
100 us
101
100
10-1
1 ms
Operation in This Area
is Limited by R DS(on)
10 ms
100 ms
DC
Single Pulse
TJ=Max rated
TC=25℃
10-1
100
101
102
25
50
75
100
125
150
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
Fig.10 Maximum Drain Current vs.
Case Temperature
Fig.9 Maximum Safe Operating Area
1.3
※ Notes :
1. VGS = 0 V
2. ID = 250 uA
100
10-1
10-2
10-3
10-4
1.2
1.1
1.0
0.9
0.8
0.7
D=0.5
0.2
0.1
0.05
0.02
0.01
※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ (t) + TC
single pulse
JC
-50
-25
0
25
50
75
100
125
150
10-5
10-4
10-3
10-2
10-1
100
101
102
TJ, Junction Temperature [oC]
t1, Rectangular Pulse Duration [sec]
Fig.12 Breakdown Voltage Variation
with Temperature
Fig.11 Transient Thermal Response
Curve
4
Jun. 2015. Rev 1.1
MagnaChip Semiconductor Ltd.
Package Dimension
3 Leads, TO-220
Dimensions are in millimeters unless otherwise specified
5
Jun. 2015. Rev 1.1
MagnaChip Semiconductor Ltd.
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
Semiconductor Ltd.
is a registered trademark of MagnaChip
6
Jun. 2015. Rev 1.1
MagnaChip Semiconductor Ltd.
相关型号：
©2020 ICPDF网 联系我们和版权申明