MDS1651 [MGCHIP]
Single N-Channel Trench MOSFET 30V, 11.6A, 17m(ohm);
| 型号： | MDS1651 |
| 厂家： | 
MagnaChip |
| 描述： | Single N-Channel Trench MOSFET 30V, 11.6A, 17m(ohm) |
| 文件： | 总6页 (文件大小：647K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MDS1651
Single N-Channel Trench MOSFET 30V, 11.6A, 17mΩ
General Description
Features
The MDS1651 uses advanced MagnaChip’s MOSFET
Technology, which provides low on-state resistance,
high switching performance and excellent reliability.
à
à
à
VDS = 30V
ID = 11.6A@VGS = 10V
RDS(ON)
< 17mΩ @VGS = 10V
MDS1651 is suitable device for PWM, Load Switching
and general purpose applications.
< 22mΩ @VGS = 4.5V
Applications
à
Portable application
5(D)
6(D)
7(D)
8(D)
G
4(G)
3(S)
2(S)
1(S)
S
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Symbol
VDSS
Rating
30
Unit
V
Gate-Source Voltage
VGSS
±20
11.6
9.2
V
TC=25oC
TC=70oC
A
Continuous Drain Current
Pulsed Drain Current
Power Dissipation (1)
ID
A
IDM
PD
50
A
TA=25oC
TA=70oC
3.1
W
2
Single Pulse Avalanche Energy (2)
EAS
80
mJ
Junction and Storage Temperature Range
TJ, Tstg
-55~150
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient (1)
Thermal Resistance, Junction-to-Case
Symbol
RθJA
Rating
40
Unit
oC/W
RθJC
24
1
October 2008. Version 1.0
MagnaChip Semiconductor Ltd.
Ordering Information
Part Number
Temp. Range
Package
Packing
MDS1651RH
-55~150oC
SO-8
Tape & Reel
Electrical Characteristics (Ta =25oC)
Characteristics
Static Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
BVDSS
VGS(th)
IDSS
ID = 250μA, VGS = 0V
VDS = VGS, ID = 250μA
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS = 10V, ID = 11.6A
VGS = 4.5V, ID = 10A
VDS = 5V, VGS = 10V
VDS = 5V, ID = 11.0A
30
-
1.7
-
-
3
V
1.4
-
-
1
μA
mΩ
Gate Leakage Current
IGSS
-
±0.1
17
22
-
-
12.0
16.0
-
Drain-Source ON Resistance
RDS(ON)
-
On-State Drain Current
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
ID(ON)
gfs
50
-
A
S
19
-
Qg(10V)
Qg(4.5V)
Qgs
13.7
6.8
19.0
Total Gate Charge
9.5
VDS = 15V, ID = 11.6A,
VGS = 10V
nC
pF
ns
Gate-Source Charge
-
-
-
-
-
-
-
-
-
2.0
-
-
Gate-Drain Charge
Qgd
Ciss
Crss
Coss
td(on)
tr
3.5
Input Capacitance
669
108
165
5.0
VDS = 15V, VGS = 0V,
f = 1.0MHz
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
6.5
7.5
Rise Time
6.0
VGS = 10V, VDS = 15V,
RL = 1.3Ω, RG = 3Ω
Turn-Off Delay Time
td(off)
tf
19.0
4.5
25.0
6.0
Fall Time
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VSD
VSD
trr
IS = 1A, VGS = 0V
-
-
-
-
0.7
0.8
19
9
1.0
1.1
21
V
V
IS = 4.5A, VGS = 0V
ns
nC
IF = 11.6A, dl/dt = 100A/μs
Qrr
12
Note :
1. Surface mounted FR-4 board with 2oz. Copper.
2. Starting TJ = 25°C, L = 1mH, IAS = 5A, VDD = 15V, VGS = 10V.
2
October 2008. Version 1.0
MagnaChip Semiconductor Ltd.
70
60
50
40
30
20
10
0
25
20
15
10
5
10.0V
6.0V
4.5V
VGS=4.5V
3.5V
VGS=10.0V
0
1
2
3
4
5
0
13
25
38
50
VDS, Drain-Source Voltage [V]
ID, Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.1 On-Region Characteristics
50
40
30
20
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
ID=11.6A
TJ=125℃
TJ=25℃
-75
-50
-25
0
25
50
75
100
125
150
175
2
4
6
8
10
TJ, Junction Temperature (℃)
VGS, Gate To Source Voltage [V]
Fig.3 On-Resistance Variation with
Temperature
Fig.4 On-Resistance Variation with
Gate to Source Voltage
30
25
20
15
10
5
* Notes :
VDS=5V
101
100
* Notes
VGS=0V
TA=125℃
TA=25℃
10-1
10-2
10-3
TA=-55℃
125℃
25℃
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VGS, Gate-Source Voltge [V]
VSD, Source-Drain Voltage [V]
Fig.5 Transfer Characteristics
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
3
October 2008. Version 1.0
MagnaChip Semiconductor Ltd.
10
8
1.2n
800.0p
400.0p
0.0
C
iss = Cgs + Cgd (Cds = shorted)
※ Note : ID = 11.6A
Coss = Cds + C
gd
Crss = C
gd
6
C
iss
VDS = 15V
4
※Notes ;
1. VGS = 0 V
2. f = 1 MHz
2
C
oss
C
rss
0
0
3
6
9
12
15
0
5
10
15
20
25
30
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
15
12
9
103
102
101
100
10-1
10-2
Operation in This Area
is Limited by R DS(on)
1 ms
10 ms
100 ms
1s
10s
DC
6
Single Pulse
TJ=Max rated
TC=25℃
3
10-1
100
101
102
0
25
50
75
100
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature [℃]
Fig.10 Maximum Drain Current vs. Case
Temperature
Fig.9 Maximum Safe Operating Area
0
10
D=0.5
0.2
-1
10
0.1
0.05
0.02
0.01
※Notes :
DutyFactor, D=t1/t2
PEAK T = PDM * Z JC* R (t) + TC
J
θ
θ JC
RΘ JA=40℃/W
single pulse
-2
10
-3
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response
Curve
4
October 2008. Version 1.0
MagnaChip Semiconductor Ltd.
Physical Dimensions
8 Leads SOIC
Dimensions are in millimeters unless otherwise specified
5
October 2008. Version 1.0
MagnaChip Semiconductor Ltd.
Worldwide Sales Support Locations
U.S.A
China
Sunnyvale Office
Hong Kong Office
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Tel : 1-408-636-5200
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DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
Semiconductor Ltd.
is a registered trademark of MagnaChip
6
October 2008. Version 1.0
MagnaChip Semiconductor Ltd.
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