MDS3754ARH [MGCHIP]
P-Channel Trench MOSFET, -40V, -6.0A, 45m(ohm);
| 型号： | MDS3754ARH |
| 厂家： | 
MagnaChip |
| 描述： | P-Channel Trench MOSFET, -40V, -6.0A, 45m(ohm) |
| 文件： | 总6页 (文件大小：814K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MDS3754A
P-Channel Trench MOSFET, -40V, -6.0A, 45mΩ
General Description
Features
The MDS3754A uses advanced Magnachip’s Trench
MOSFET Technology to provided high performance in on-
state resistance, switching performance and reliability.
VDS = -40V
ID = -6.0 @ VGS = -10V
RDS(ON)
<45m @ VGS = -10V
<60m @ VGS = -4.5V
Low RDS(ON), Low Gate Charge can be offering superior
benefit in the application.
Applications
Inverters
General purpose applications
5(D)
6(D)
7(D)
8(D)
4(G)
3(S)
G
2(S)
1(S)
S
Absolute Maximum Ratings (TC =25o)
Characteristics
Drain-Source Voltage
Symbol
VDSS
VGSS
ID
Rating
-40
Unit
V
Gate-Source Voltage
±20
V
Continuous Drain Current
(Note 1)
(Note 2)
-6.0
A
Pulsed Drain Current
IDM
-50
A
Power Dissipation
PD
2.5
W
mJ
oC
Single Pulse Avalanche Energy
Junction and Storage Temperature Range
EAS
32
TJ, Tstg
-55~+150
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Symbol
RθJA
Rating
50
Unit
(Note 1)
oC/W
RθJC
25
1
June 2009. Version 1.0
MagnaChip Semiconductor Ltd.
Ordering Information
Part Number
Temp. Range
Package
Packing
RoHS Status
MDS3754ARH
-55~150oC
SIOC-8
Tape & Reel
Halogen Free
Electrical Characteristics (TJ =25oC unless otherwise noted)
Characteristics
Static Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
BVDSS
VGS(th)
IDSS
ID = -250μA, VGS = 0V
VDS = VGS, ID = -250μA
VDS = -32V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS = -10V, ID = -6A
VGS = -4.5V, ID = -4A
VDS = -10V, ID = -6A
-40
-
-
-3.0
-1
V
-1.0
-2.0
Zero Gate Voltage Drain Current
Gate Leakage Current
-
-
-
μA
IGSS
-
±0.1
45
60
-
34
46
12
Drain-Source ON Resistance
RDS(ON)
gFS
mΩ
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
S
Qg
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
-
-
-
-
-
-
-
-
-
-
15.6
2.4
-
-
-
-
-
-
-
-
-
-
VDS = -28V, ID = -4.8A,
VGS = -10V
Gate-Source Charge
nC
pF
Gate-Drain Charge
3.8
Input Capacitance
660
57
VDS = -25V, VGS = 0V,
f = 1.0MHz
Reverse Transfer Capacitance
Output Capacitance
100
14.7
7.2
Turn-On Delay Time
Turn-On Rise Time
VGS = -10V ,VDS = -20V,
ID = 1A, RGEN = 3.3Ω
ns
Turn-Off Delay Time
td(off)
tf
32.1
12.5
Turn-Off Fall Time
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
VSD
trr
IS = -6A, VGS = 0V
-
-
-
-
1.2
V
27.2
19.6
-
-
ns
nC
IS = -4.8A, di/dt=100A/us
Qrr
Note :
1.
2.
Surface mounted RF4 board with 2oz. Copper.
Starting TJ=25°C, L=1mH, IAS=-8A VDD=-20V, VGS=-10V
.
2
June 2009. Version 1.0
MagnaChip Semiconductor Ltd.
25
20
15
10
5
120
100
80
60
40
20
0
VGS = -10V
-8V
-4.5V
-4.0V
VGS = -4.5V
VGS = -10V
-3.0V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
5
10
15
20
25
-VDS, Drain-Source Voltage [V]
-ID, Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.1 On-Region Characteristics
1.8
120
※ Notes :
1. VGS = 10 V
2. ID = -6 A
1.6
1.4
1.2
1.0
0.8
0.6
100
80
60
40
20
0
TA = 125
℃
TA = 25
℃
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
TJ, Junction Temperature [oC]
VGS, Gate to Source Volatge [V]
Fig.3 On-Resistance Variation with
Temperature
Fig.4 On-Resistance Variation with
Gate to Source Voltage
20
16
12
8
※ Notes :
VGS = 0V
※ Notes :
VDS = -5V
101
TA=125
℃
TA=125
℃
25
℃
25
℃
-55
℃
4
0
1.0
100
0.4
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.6
0.8
1.0
1.2
1.4
-VGS, Gate-Source Voltage [V]
-VSD, Source-Drain voltage [V]
Fig.5 Transfer Characteristics
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
3
June 2009. Version 1.0
MagnaChip Semiconductor Ltd.
1.0n
800.0p
600.0p
400.0p
200.0p
0.0
10
8
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
※ Note : ID = -6A
Crss = Cgd
Ciss
VDS = -28V
6
4
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
2
Coss
Crss
0
0
4
8
12
16
20
0
10
20
30
40
QG, Total Gate Charge [nC]
-VDS, Drain-Source Voltage [V]
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
8
103
102
101
100
10-1
10-2
Operation in This Area
is Limited by R DS(on)
6
4
2
0
100 s
1 ms
10 ms
100 ms
1 s
10 s
DC
Single Pulse
RthJA=125.0
TA=25
※ Notes :
℃
/W
RthJA = 50 [ /W]
℃
℃
10-1
100
101
102
25
50
75
100
125
150
TA, Case Temperature [ ]
℃
-VDS, Drain-Source Voltage [V]
Fig.10 Maximum Drain Current vs. Case
Temperature
Fig.9 Maximum Safe Operating Area
100
10-1
10-2
10-3
D=0.5
0.2
0.1
0.05
※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JA* Rθ (t) + TA
0.02
JA
RΘ =125.0 /W
℃
JA
0.01
single pulse
10-4
10-3
10-2
10-1
100
101
102
103
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response Curve
4
June 2009. Version 1.0
MagnaChip Semiconductor Ltd.
Physical Dimensions
8 Leads, SOIC
Dimensions are in millimeters unless otherwise specified
5
June 2009. Version 1.0
MagnaChip Semiconductor Ltd.
Worldwide Sales Support Locations
U.S.A
China
Sunnyvale Office
Hong Kong Office
787 N. Mary Ave. Sunnyvale
CA 94085 U.S.A
Tel : 1-408-636-5200
Fax : 1-408-213-2450
E-Mail : usasales@magnachip.com
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Tsim Sha Tsui Kowloon, Hong Kong
Tel : 852-2828-9700
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E-Mail : chinasales@magnachip.com
Shenzhen Office
U.K
Room 1803, 18/F
Knyvett House The Causeway,
Staines Middx, TW18 3BA,U.K.
Tel : +44 (0) 1784-895-000
Fax : +44 (0) 1784-895-115
E-Mail : uksales@magnachip.com
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Fuhua Road3 CBD, Futian District, China
Tel : 86-755-8831-5561
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Japan
Shanghai Office
Osaka Office
Room E, 8/F, Liaoshen International Building 1068
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Shanghai, China
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Fax : 86-21-6505-1523
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E-Mail : taiwansales@magnachip.com
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
Semiconductor Ltd.
is a registered trademark of MagnaChip
6
June 2009. Version 1.0
MagnaChip Semiconductor Ltd.
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