MDU2511SVRH [MGCHIP]
Single N-channel Trench MOSFET 30V, 188A, 1.7m(ohm);
| 型号： | MDU2511SVRH |
| 厂家： | 
MagnaChip |
| 描述： | Single N-channel Trench MOSFET 30V, 188A, 1.7m(ohm) |
| 文件： | 总6页 (文件大小：760K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MDU2511S
Single N-channel Trench MOSFET 30V, 188A, 1.7mΩ
General Description
Features
The MDU2511S uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDU2511S is suitable device for DC/DC
Converter and general purpose applications.
à
à
à
VDS = 30V
ID = 188A @VGS = 10V
RDS(ON)
< 1.7 mΩ @VGS = 10V
< 2.1 mΩ @VGS = 4.5V
100% UIL Tested
100% Rg Tested
SBD Built In
à
à
à
D
D
D
D
D
D
D
D
D
G
S
S
S
G
G
S
S
S
S
PDFN56
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Symbol
VDSS
Rating
Unit
V
30
±20
Gate-Source Voltage
VGSS
V
TC=25oC
TC=100oC
TA=25oC
TA=70oC
188.0
118.9
45.0(3)
36.0(3)
300
Continuous Drain Current (1)
ID
A
Pulsed Drain Current
IDM
TC=25oC
96.2
TC=100oC
TA=25oC
TA=70oC
38.5
Power Dissipation
PD
W
5.6(3)
3.6(3)
320.0
-55~150
Single Pulse Avalanche Energy (2)
EAS
mJ
oC
Junction and Storage Temperature Range
TJ, Tstg
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient (1)
Thermal Resistance, Junction-to-Case
Symbol
RθJA
Rating
22.7
Unit
oC/W
RθJC
1.3
1
Aug. 2012. Ver. 1.0
MagnaChip Semiconductor Ltd.
Ordering Information
Part Number
Temp. Range
Package
Packing
RoHS Status
MDU2511SVRH
-55~150oC
PDFN56
Tape & Reel
Halogen Free
Electrical Characteristics (TJ =25oC)
Characteristics
Static Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
BVDSS
VGS(th)
IDSS
ID = 250μA, VGS = 0V
VDS = VGS, ID = 250μA
VDS = 24V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS = 10V, ID = 22A
30
-
-
V
1.3
1.9
-
2.7
500
±0.1
1.7
2.4
2.1
-
-
-
-
-
-
-
μA
Gate Leakage Current
IGSS
-
1.2
1.7
1.5
70
Drain-Source ON Resistance
RDS(ON)
TJ=125oC
mΩ
VGS = 4.5V, ID = 20A
VDS = 5V, ID = 22A
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
gfs
S
Qg(4.5V)
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
32.7
46.7
15.5
17.9
7023
652
60.7
VDS = 15.0V, ID = 22A,
VGS = 10V
Gate-Source Charge
-
-
nC
pF
Gate-Drain Charge
-
-
Input Capacitance
5267
8427
V
DS = 15.0V, VGS = 0V,
Reverse Transfer Capacitance
Output Capacitance
489
782
f = 1.0MHz
897
1197
24.5
14.6
80.3
22.8
1.0
1436
Turn-On Delay Time
-
-
-
-
-
Rise Time
-
VGS = 10V, VDS = 15.0V,
ID = 22A , RG = 3.0Ω
ns
Turn-Off Delay Time
td(off)
tf
-
-
Fall Time
Gate Resistance
Rg
f=1 MHz
2.0.
Ω
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VSD
trr
IS = 1A, VGS = 0V
-
-
-
0.33
42.7
49.5
0.7
V
-
-
ns
nC
IF = 22A, dl/dt = 100A/μs
Qrr
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited
2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 40.0A, VDD = 27V, VGS = 10V.
3. T < 10sec.
2
Aug. 2012. Ver. 1.0
MagnaChip Semiconductor Ltd.
200
180
160
140
120
100
80
2.0
1.8
1.6
1.4
1.2
1.0
0.8
3.5V
4.0V
4.5V
5.0V
VGS = 10V
VGS = 4.5V
3.0V
VGS = 10V
60
40
20
0
0
1
2
3
4
5
20
40
60
80
100
120
140
160
180
200
VDS, Drain-Source Voltage [V]
ID, Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.1 On-Region Characteristics
10
9
8
7
6
5
4
3
2
1
0
1.8
※ Notes :
※ Notes :
1. VGS = 10 V
2. ID = 22.0 A
I
D = 22.0A
1.6
1.4
1.2
1.0
0.8
0.6
TA = 25℃
2
3
4
5
6
7
8
9
10
-50
-25
0
25
50
75
100
125
150
VGS, Gate to Source Volatge [V]
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with
Temperature
Fig.4 On-Resistance Variation with
Gate to Source Voltage
100
80
16
※ Notes :
※ Notes :
VDS = 5V
VGS = 0V
12
8
60
TA=25℃
40
4
TA=25℃
20
0
0
1
2
3
4
5
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
VSD, Source-Drain voltage [V]
VGS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
3
Aug. 2012. Ver. 1.0
MagnaChip Semiconductor Ltd.
10
8
10000
8000
6000
4000
2000
0
C
C
C
iss = Cgs + Cgd (Cds = shorted)
oss = Cds + Cgd
rss = Cgd
※ Note : ID = 22A
VDS = 15V
C
iss
6
4
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
Coss
2
C
rss
0
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
80
90
100
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
103
200
180
160
140
120
100
80
1 ms
102
101
100
10-1
10 ms
Operation in This Area
is Limited by R DS(on)
100 ms
1s
10s
DC
60
40
Single Pulse
TJ=Max rated
TC=25℃
20
0
10-1
100
101
102
25
50
75
100
125
150
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
Fig.10 Maximum Drain Current vs.
Case Temperature
Fig.9 Maximum Safe Operating Area
101
100 D=0.5
0.2
-1
10 0.1
0.05
0.02
-2
10
0.01
※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ (t) + TC
JC
single pulse
-3
10
-4
10
-3
10
-2
10
-1
10
100
101
102
103
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response
Curve
4
Aug. 2012. Ver. 1.0
MagnaChip Semiconductor Ltd.
Package Dimension
PDFN56 (5x6mm)
Dimensions are in millimeters, unless otherwise specified
MILLIMETERS
Dimension
Min
Max
1.10
0.51
0.34
5.10
A
b
0.90
0.33
0.20
4.50
C
D1
D2
-
4.22
E
E1
E2
e
5.90
5.50
-
6.30
6.10
4.30
1.27BSC
H
0.41
0.20
0.51
0.71
-
K
L
0.71
α
0°
12°
5
Aug. 2012. Ver. 1.0
MagnaChip Semiconductor Ltd.
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
Semiconductor Ltd.
is a registered trademark of MagnaChip
6
Aug. 2012. Ver. 1.0
MagnaChip Semiconductor Ltd.
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