MMP65R380Q [MGCHIP]
650V 0.38ohm N-channel MOSFET;
| 型号： | MMP65R380Q |
| 厂家： | 
MagnaChip |
| 描述： | 650V 0.38ohm N-channel MOSFET |
| 文件： | 总10页 (文件大小：1300K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMP65R380Q Datasheet
MMP65R380Q
650V 0.38Ω N-channel MOSFET
Description
MMP65R380Q is power MOSFET using Magnachip’s advanced super junction technology that
can realize very low on-resistance and gate charge. It will provide much high efficiency by using
optimized charge coupling technology. These user friendly devices give an advantage of low EMI to
designers as well as low switching loss.
Key Parameters
Package & Internal Circuit
Parameter
VDS @ Tj, max
RDS(on), max
VGS(th), typ
ID
Value
Unit
V
D
700
0.38
3
Ω
V
G
10.6
20.6
A
G
Qg, typ
nC
D
S
S
Features
Low power loss by high speed switching and low on-resistance
100% avalanche tested
Green package – Pb-free plating, Halogen-free
Applications
PFC power supply stages
Switching applications
Adapter
Ordering Information
Order Code
Marking
Temp. Range
Package
Packing
RoHS Status
MMP65R380QTH
65R380Q
-55 ~ 150oC
TO-220
Tube
Compliant
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Jun. 2017 Revision 1.0
MagnaChip Semiconductor Ltd.
MMP65R380Q Datasheet
Absolute Maximum Rating (Tc=25oC unless otherwise specified)
Parameter
Symbol
VDSS
Rating
650
Unit
V
Note
Drain – source voltage
Gate – source voltage
VGSS
±30
10.6
6.7
V
A
TC = 25oC
Continuous drain current
ID
A
TC = 100oC
Pulsed drain current(1)
IDM
PD
31.8
83.3
215
A
Power dissipation
W
Single - pulse avalanche energy
MOSFET dv/dt ruggedness
Diode dv/dt ruggedness(2)
Storage temperature
EAS
dv/dt
dv/dt
Tstg
Tj
mJ
V/ns
V/ns
oC
oC
50
15
-55 ~150
150
Maximum operating junction
temperature
1) Pulse width tP limited by Tj,max.
2) ISD ≤ ID, VDS peak ≤ V(BR)DSS.
Thermal Characteristics
Parameter
Symbol
Value
1.5
Unit
oC/W
oC/W
Thermal resistance, junction-case max
Thermal resistance, junction-ambient max
Rthjc
Rthja
62.5
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MMP65R380Q Datasheet
Static Characteristics (Tc=25oC unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit Test Condition
Drain – source
breakdown voltage
V(BR)DSS
VGS(th)
IDSS
650
-
3
-
-
4
V
V
VGS = 0V, ID = 250uA
VDS = VGS, ID = 250uA
VDS = 650V, VGS = 0V
VGS = ±30V, VDS = 0V
VGS = 10V, ID = 3.2A
Gate threshold voltage
2
-
Zero gate voltage drain current
Gate leakage current
1
uA
nA
Ω
IGSS
-
-
100
Drain-source on state resistance
RDS(ON)
-
0.34 0.38
Dynamic Characteristics (Tc=25oC unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit Test Condition
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
Co(er)
td(on)
tr
-
-
-
-
-
-
-
-
-
-
-
-
763
896
38.7
23.7
19
-
-
-
-
-
-
-
-
-
-
-
-
VDS = 25V, VGS = 0V,
f = 1.0MHz
pF
ns
Effective output capacitance
energy related(3)
VDS = 0V to 520V,
VGS = 0V, f = 1.0MHz
Turn on delay time
Rise time
38
VGS = 10V, RG = 25Ω,
VDS = 325V, ID = 10.6A
Turn off delay time
Fall time
td(off)
tf
108
36
Total gate charge
Gate – source charge
Gate – drain charge
Gate resistance
Qg
20.6
5.3
7.5
19
VGS = 10V, VDS = 520V,
ID = 10.6A
Qgs
Qgd
RG
nC
Ω
VGS = 0V, f = 1.0MHz
3) Co(er) is a capacitance that gives the same stored energy as Coss while VDS is rising from 0V to 80% V(BR)DSS
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Jun. 2017 Revision 1.0
MagnaChip Semiconductor Ltd.
MMP65R380Q Datasheet
Reverse Diode Characteristics (Tc=25oC unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit Test Condition
Continuous diode forward current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
IS
VSD
trr
-
-
-
-
-
-
10.6
A
V
-
1.4
IS = 10.6A, VGS = 0V
324
3.8
23.2
-
-
-
ns
uC
A
IS = 10.6A
di/dt = 100A/us
VDD = 100V
Qrr
Irrm
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Jun. 2017 Revision 1.0
MagnaChip Semiconductor Ltd.
MMP65R380Q Datasheet
Characteristic Graph
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MMP65R380Q Datasheet
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MagnaChip Semiconductor Ltd.
MMP65R380Q Datasheet
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MMP65R380Q Datasheet
Test Circuit
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MagnaChip Semiconductor Ltd.
MMP65R380Q Datasheet
Physical Dimension
3 Leads, TO-220
Note : PKG Body Sizes exclude Mold Flash & Gate Burrs
[unit:mm]
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MMP65R380Q Datasheet
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
Semiconductor Ltd.
is a registered trademark of MagnaChip
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MagnaChip Semiconductor Ltd.
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