MPKC2SB150U60 [MGCHIP]
600V FRD Module;
| 型号： | MPKC2SB150U60 |
| 厂家： | 
MagnaChip |
| 描述： | 600V FRD Module 超快恢复二极管 快速恢复二极管 局域网 测试 |
| 文件： | 总5页 (文件大小：654K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MPKC2SB/CB150U60
600V FRD Module
General Description
Features
Ultra-FRD module devices are optimized to reduce losses
and EMI/RFI in high frequency power conditioning electrical
systems.
These diode modules are ideally suited for power converters,
Motors drives and other applications where switching losses
are significant portion of the total losses.
Repetitive Reverse Voltage : VRRM= 600V
Low Forward Voltage : VF(typ.) = 1.45V
Average Forward Current : IF(Av.)=150A @TC=100℃
Ultra-Fast Reverse Recovery Time : trr(typ.) = 40ns
Extensive Characterization of Recovery Parameters
Reduced EMI and RFI
Isolation Type Package
Applications
High Speed & High Power converters, Welders
Various Switching and Telecommunication Power Supply
Ordering Information
Product
Name
MPKC2SB150U60
MPKC2CB150U60
Side Common
& P-type
Center Common
& P-type
Optional
Information
E301932
5DM-2
Absolute Maximum Ratings @Tc = 25oC (Per Leg)
Characteristics
Conditions
Symbol
Rating
Unit
Repetitive Peak Reverse Voltage
Reverse DC Voltage
VRRM
600
480
V
V
VR(DC)
TC=25oC
300
A
Average Forward Current
Resistive Load
IF(AV)
TC=100oC
150
A
One Half Cycle at 60Hz,
Peak Value
Value for One Cycle Current,
tw = 8.3ms, Tj= 25℃ Start
Surge(non-repetitive) Forward Current
I2t for Fusing
IFSM
I2t
TJ
PD
Visol
Tstg
-
2750
31.3* 103
-40 ~ 150
520
A
A2s
℃
W
V
Junction Temperature
Maximum Power Dissipation
Isolation Voltage
@AC 1 minutes
2500
-40 ~ 150
4.0
Storage Temperature
Mounting Torque
℃
N.m
N.m
g
Terminal Torque
Typical Including Screws
-
3.0
Weight
-
180
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MagnaChip Semiconductor Ltd.
Electrical Characteristics @Tc = 25oC(unless otherwise specified)
Characteristics
Conditions
Symbol
Min.
Typ.
Max.
Unit
Cathode Anode Breakdown Voltage
IR=100uA
VR
600
-
-
1.8
-
V
TC=25℃
-
-
1.45
1.35
Diode Maximum Forward Voltage
IF=150A
VFM
V
TC=100℃
Tc=100℃,
VRRM applied
IF =1A,VR=30V
di/dt = -300A/uS
Diode Peak ReverseRecovery Current
Diode Reverse Recovery Time
TC=100℃
TC=25℃
TC=25℃
TC=100℃
IRRM
trr
-
-
-
-
-
1.0
55
140
-
mA
ns
40
110
180
IF =150A,VR=300V
di/dt = -300A/uS
Diode Reverse Recovery Time
trr
ns
Thermal Characteristics
Characteristics
Conditions
Junction to Case
Symbol
Min.
-
Typ. Max.
0.24
Unit
Thermal Resistance(Isolation Type)
Rth(j-c)
-
℃/W
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MagnaChip Semiconductor Ltd.
300
250
200
150
100
50
150
120
90
60
30
0
TC=25℃
TC=125℃
0
0.0
0.5
1.0
1.5
2.0
2.5
100
200
300
400
500
Forward Voltage Drop,VF[V]
di/dt[A/us]
Fig.1 Typical Forward Voltage Drop
vs. Instantaneous Forward Current
Fig.2 Typical Reverse Recovery Time
Vs. –di/dt
400
1
350
300
250
200
150
100
50
0.1
0.01
1E-3
1E-4
DC
TC=25℃
0
0
20
40
60
80
100
120
140
160
1E-5
1E-4
1E-3
0.01
0.1
1
10
Case Temperatute, Tc[℃]
Rectangular Pulse Duration Time[sec]
Fig.3 Transient Thermal Impedance(Zthjc)
Characteristics
Fig.4 Forward Current Derating Curve
3
Mar. 2013.Version 2.0
MagnaChip Semiconductor Ltd.
Package Dimension
5DM-2
Dimensions are in millimeters, unless otherwise specified
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MagnaChip Semiconductor Ltd.
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
Semiconductor Ltd.
is a registered trademark of MagnaChip
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MagnaChip Semiconductor Ltd.
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